Inventor · disambiguated record
Anatoly Feygenson
Also filed as: FEYGENSON ANATOLY
18 granted patents·2 pending applications·646 citations·filing 1984–2017
95Inventor score
Files withAT & T BELL LAB4AMERICAN TELEPHONE & TELEGRAPH3ENPIRION INC3AMERICAN INT GROUP INC2FEYGENSON ANATOLY2
Top patents by PatentIndex Score
20 records- 0197US6005377AProgrammable digital controller for switch mode power conversion and power supply employing the sameLUCENT TECHNOLOGIES INC·Filed 1997·Granted Dec 21, 1999·241 cites·15 claims
- 0295US6440750B1Method of making integrated circuit having a micromagnetic deviceAGERE SYST GUARDIAN CORP·Filed 2000·Granted Aug 27, 2002·102 cites·10 claims
- 0390US9299691B2Semiconductor device including alternating source and drain regions, and respective source and drain metallic stripsENPIRION INC·Filed 2013·Granted Mar 29, 2016·9 cites·30 claims
- 0483US5747982AMulti-chip modules with isolated coupling between modulesLUCENT TECHNOLOGIES INC·Filed 1996·Granted May 5, 1998·79 cites·11 claims
- 0581US9553081B2Semiconductor device including a redistribution layer and metallic pillars coupled theretoENPIRION INC·Filed 2013·Granted Jan 24, 2017·4 cites·20 claims
- 0681US9443839B2Semiconductor device including gate drivers around a periphery thereofENPIRION INC·Filed 2013·Granted Sep 13, 2016·4 cites·20 claims
- 0777US9870925B1Quantum doping method and use in fabrication of nanoscale electronic devicesFEYGENSON ANATOLY·Filed 2013·Granted Jan 16, 2018·4 cites·12 claims
- 0876US4839309AFabrication of high-speed dielectrically isolated devices utilizing buried silicide outdiffusionAMERICAN TELEPHONE & TELEGRAPH·Filed 1988·Granted Jun 13, 1989·44 cites·12 claims
- 0972US4818713ATechniques useful in fabricating semiconductor devices having submicron featuresAMERICAN TELEPHONE & TELEGRAPH·Filed 1987·Granted Apr 4, 1989·39 cites·7 claims
- 1068US6696744B2Integrated circuit having a micromagnetic device and method of manufacture thereforAGERE SYSTEMS INC·Filed 2001·Granted Feb 24, 2004·12 cites·9 claims
- 1164US2005154600A1Extended work programAMERICAN INT GROUP INC·Filed 2004·Application pending·0 cites
- 1260US4860085ASubmicron bipolar transistor with buried silicide regionAMERICAN TELEPHONE & TELEGRAPH·Filed 1988·Granted Aug 22, 1989·19 cites·5 claims
- 1357US4981811AProcess for fabricating low defect polysiliconAT & T BELL LAB·Filed 1990·Granted Jan 1, 1991·28 cites·10 claims
- 1456US2006064317A1Extended work programAMERICAN INT GROUP INC·Filed 2005·Application pending·0 cites
- 1552US10510876B2Quantum doping method and use in fabrication of nanoscale electronic devicesFEYGENSON ANATOLY·Filed 2017·Granted Dec 17, 2019·0 cites·9 claims
- 1648US4651410AMethod of fabricating regions of a bipolar microwave integratable transistorSEMICONDUCTOR DIVISION THOMSON·Filed 1984·Granted Mar 24, 1987·16 cites·10 claims
- 1747US5288657ADevice fabricationAT & T BELL LAB·Filed 1990·Granted Feb 22, 1994·18 cites·21 claims
- 1842US4812890ABipolar microwave integratable transistorTHOMPSON CSF COMPONENTS CORP·Filed 1987·Granted Mar 14, 1989·14 cites·8 claims
- 1935US4987471AHigh-speed dielectrically isolated devices utilizing buried silicide regionsAT & T BELL LAB·Filed 1990·Granted Jan 22, 1991·7 cites·12 claims
- 2032US5273621ASubstantially facet-free selective epitaxial growth processAT & T BELL LAB·Filed 1992·Granted Dec 28, 1993·6 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →