Inventor · disambiguated record
Andrew Gaul
Also filed as: GAUL ANDREW
11 granted patents·8 pending applications·1 citations·filing 2013–2024
78Inventor score
Top patents by PatentIndex Score
19 records- 0187US11935930B2Wrap-around-contact for 2D-channel gate-all-around field-effect-transistorsIBM·Filed 2021·Granted Mar 19, 2024·1 cites·20 claims
- 0267US12453170B2Integration of nanosheets with bottom dielectric isolation and ideal diodeIBM·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 0360US12324197B2Spin-based gate-all-around transistorsIBM·Filed 2022·Granted Jun 3, 2025·0 cites·14 claims
- 0460US12249643B2Stacked planar field effect transistors with 2D material channelsIBM·Filed 2021·Granted Mar 11, 2025·0 cites·20 claims
- 0560US2025221002A1Airgap spacer with backside power deliveryIBM·Filed 2023·Application pending·0 cites
- 0659US12382662B2Wrap-around-contact for 2D-channel gate-all-around field-effect-transistorsIBM·Filed 2021·Granted Aug 5, 2025·0 cites·17 claims
- 0758US2025275204A1Gate-all-around field effect transistor with variable channel geometriesIBM·Filed 2024·Application pending·0 cites
- 0856US11742350B2Metal gate N/P boundary control by active gate cut and recessIBM·Filed 2021·Granted Aug 29, 2023·0 cites·18 claims
- 0956US11646306B2Co-integration of gate-all-around FET, FINFET and passive devices on bulk substrateIBM·Filed 2021·Granted May 9, 2023·0 cites·19 claims
- 1055US12136656B2Semiconductor structure having two-dimensional channelIBM·Filed 2021·Granted Nov 5, 2024·0 cites·20 claims
- 1155US11016933B2Handling weakening of hash functions by using epochsEMC IP HOLDING CO LLC·Filed 2019·Granted May 25, 2021·0 cites·21 claims
- 1253US2024204079A1Self-aligned gate metal with top-dielectric isolationIBM·Filed 2022·Application pending·0 cites
- 1352US2024234516A1Transistor gate stack formationIBM·Filed 2023·Application pending·0 cites
- 1451US2023163203A1Reduced parasitic resistance two-dimensional material field-effect transistorIBM·Filed 2021·Application pending·0 cites
- 1551US2024213315A1Gate-all-around transistors with cladded source/drain regionsIBM·Filed 2022·Application pending·0 cites
- 1651US2024290860A1Self-aligned substrate isolation (sasi) of gate-all-around nanosheet field effect transistorsIBM·Filed 2023·Application pending·0 cites
- 1749US2023143317A1Gate cut subsequent to replacement gateIBM·Filed 2021·Application pending·0 cites
- 1839US10242015B1Handling weakening of hash functions by using epochsEMC IP CORP COMPANY LLC·Filed 2015·Granted Mar 26, 2019·0 cites·23 claims
- 1937US9178860B2Out-of-path, content-addressed writes with untrusted clientsMAGINATICS INC·Filed 2013·Granted Nov 3, 2015·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →