Inventor · disambiguated record
Andreas Gehrmann
Also filed as: GEHRMANN ANDREAS
3 granted patents·70 citations·filing 1999–1999
71Inventor score
Technology areasH10D
Files withELMOS SEMICONDUCTOR AG3
Top patents by PatentIndex Score
3 records- 0172US6271550B1Junction field effect transistor or JFET with a well which has graded doping directly beneath the gate electrodeELMOS SEMICONDUCTOR AG·Filed 1999·Granted Aug 7, 2001·41 cites·6 claims
- 0262US6455893B1MOS transistor with high voltage sustaining capability and low on-state resistanceELMOS SEMICONDUCTOR AG·Filed 1999·Granted Sep 24, 2002·28 cites·8 claims
- 0324US6137148ANMOS transistorELMOS SEMICONDUCTOR AG·Filed 1999·Granted Oct 24, 2000·1 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →