Inventor · disambiguated record
Andreas Klipp
Also filed as: KLIPP ANDREAS
28 granted patents·15 pending applications·37 citations·filing 2004–2023
93Inventor score
Top patents by PatentIndex Score
43 records- 0186US10538724B2Defect reduction rinse solution containing ammonium salts of sulfoestersBASF SE·Filed 2016·Granted Jan 21, 2020·3 cites·21 claims
- 0281US9146471B2Resist stripping compositions and methods for manufacturing electrical devicesKLIPP ANDREAS·Filed 2010·Granted Sep 29, 2015·6 cites·30 claims
- 0377US10647900B2Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitorsBASF SE·Filed 2014·Granted May 12, 2020·3 cites·16 claims
- 0476US9557652B2Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or belowBASF SE·Filed 2013·Granted Jan 31, 2017·3 cites·22 claims
- 0576US8476368B2Low-k dielectrics obtainable by twin polymerizationKLIPP ANDREAS·Filed 2009·Granted Jul 2, 2013·2 cites·19 claims
- 0674US11180719B2Use of compositions comprising a siloxane-type additive for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or belowBASF SE·Filed 2018·Granted Nov 23, 2021·2 cites·15 claims
- 0772US9184057B2Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and lessKLIPP ANDREAS·Filed 2012·Granted Nov 10, 2015·3 cites·19 claims
- 0867US9005367B2Resist stripping compositions and methods for manufacturing electrical devicesKLIPP ANDREAS·Filed 2010·Granted Apr 14, 2015·2 cites·28 claims
- 0966US7879395B2Method of preparing a coating solution and a corresponding use of the coating solution for coating a substrateQIMONDA AG·Filed 2006·Granted Feb 1, 2011·4 cites·13 claims
- 1066US7265023B2Fabrication method for a semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 4, 2007·5 cites·8 claims
- 1165US9891520B2Use of surfactants having at least three short-chain perfluorinated groups in formulations for photo mask cleaningBASF SE·Filed 2014·Granted Feb 13, 2018·1 cites·18 claims
- 1265US8901000B2Aqueous acidic solution and etching solution and method for texturizing the surface of single crystal and polycrystal silicon substratesBRAUN SIMON·Filed 2011·Granted Dec 2, 2014·2 cites·31 claims
- 1364US12331239B2Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobaltBASF SE·Filed 2023·Granted Jun 17, 2025·0 cites·19 claims
- 1459US11168239B2Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitorsBASF SE·Filed 2020·Granted Nov 9, 2021·0 cites·17 claims
- 1552US2025305152A1Composition, its use and a process for cleaning substrates comprising cobalt and copperBASF SE·Filed 2023·Application pending·0 cites
- 1651US2025277149A1Etching composition and method for manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1750US9223221B2Photoresist stripping and cleaning composition, method of its preparation and its useBASF SE·Filed 2013·Granted Dec 29, 2015·0 cites·17 claims
- 1847US12024693B2Imidazolidinethione-containing compositions for post-ash residue removal and/or for oxidative etching of a layer or mask comprising TiNBASF SE·Filed 2019·Granted Jul 2, 2024·0 cites·15 claims
- 1947US2023340370A1Composition, Its Use And A Process For Removing Post-Etch ResiduesBASF SE·Filed 2021·Application pending·0 cites
- 2047US2025109332A1Composition, its use and a process for selectively etching silicon-germanium materialBASF SE·Filed 2023·Application pending·0 cites
- 2147US2025115809A1Composition, its use and a process for selectively etching silicon-germanium materialBASF SE·Filed 2023·Application pending·0 cites
- 2245US2020339523A1Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobaltBASF SE·Filed 2018·Application pending·0 cites
- 2344US2011076416A1Method of making porous materials and porous materials prepared thereofBASF SE·Filed 2009·Application pending·0 cites
- 2443US11742197B2Cleavable additives for use in a method of making a semiconductor substrateBASF SE·Filed 2019·Granted Aug 29, 2023·0 cites·8 claims
- 2543US9484218B2Post ion implant stripper for advanced semiconductor applicationCHEN CHIENSHIN·Filed 2010·Granted Nov 1, 2016·1 cites·22 claims
- 2642US10385295B2Compositions for anti pattern collapse treatment comprising gemini additivesBASF SE·Filed 2013·Granted Aug 20, 2019·0 cites·16 claims
- 2741US10865361B2Composition for post chemical-mechanical-polishing cleaningBASF SE·Filed 2017·Granted Dec 15, 2020·0 cites·20 claims
- 2841US2023235252A1Use of a Composition Consisting of Ammonia and an Alkanol for Avoiding Pattern Collapse When Treating Patterned Materials with Line-Space Dimensions of 50 NM or BelowBASF SE·Filed 2021·Application pending·0 cites
- 2941US2023326759A1Composition, Its Use And A Process For Selectively Etching Silicon-Germanium MaterialBASF SE·Filed 2021·Application pending·0 cites
- 3040US9236256B2Use of surfactants having at least three short-chain perfluorinated groups RF for manufacturing integrated circuits having patterns with line-space dimensions below 50 NMKLIPP ANDREAS·Filed 2012·Granted Jan 12, 2016·0 cites·13 claims
- 3140US2015192854A1Composition for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devicesBASF SE·Filed 2013·Application pending·0 cites
- 3239US10844325B2Composition for post chemical-mechanical-polishing cleaningBASF SE·Filed 2016·Granted Nov 24, 2020·0 cites·13 claims
- 3339US2022169956A1Composition comprising an ammonia-activated siloxane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or belowBASF SE·Filed 2020·Application pending·0 cites
- 3438US8969275B2Aqueous alkaline cleaning compositions and methods of their useMELLIES RAIMUND·Filed 2010·Granted Mar 3, 2015·0 cites·25 claims
- 3536US9275851B2Aqueous, nitrogen-free cleaning composition and its use for removing residues and contaminants from semiconductor substrates suitable for manufacturing microelectronic devicesKLIPP ANDREAS·Filed 2012·Granted Mar 1, 2016·0 cites·14 claims
- 3636US2004253834A1Method for fabricating a trench isolation structureINFINEON TECHNOLOGIES AG·Filed 2004·Application pending·0 cites
- 3736US2007212849A1Method of fabricating a groove-like structure in a semiconductor deviceLUDWIG FRANK·Filed 2006·Application pending·0 cites
- 3835US10844333B2Composition for post chemical-mechanical-polishing cleaningBASF SE·Filed 2016·Granted Nov 24, 2020·0 cites·12 claims
- 3935US8927476B2Aqueous alkaline cleaning compositions and methods of their useMELLIES RAIMUND·Filed 2011·Granted Jan 6, 2015·0 cites·18 claims
- 4034US11377624B2Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing processBASF SE·Filed 2018·Granted Jul 5, 2022·0 cites·15 claims
- 4134US2006003546A1Gap-filling for isolationKLIPP ANDREAS·Filed 2004·Application pending·0 cites
- 4234US2012021961A1Composition for post chemical-mechanical polishing cleaningKLIPP ANDREAS·Filed 2010·Application pending·0 cites
- 4330US12084628B2Composition comprising a primary and a secondary surfactant, for cleaning or rinsing a productBASF SE·Filed 2018·Granted Sep 10, 2024·0 cites·13 claims
Join the waitlist — get patent alerts
Get an alert when Andreas Klipp files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →