Inventor · disambiguated record
Anthony Konecni
Also filed as: KONECNI ANTHONY · KONECNI ANTHONY J · KONECNI ANTHONY JOSEPH
12 granted patents·3 pending applications·363 citations·filing 1995–2010
93Inventor score
Top patents by PatentIndex Score
15 records- 0191US6355558B1Metallization structure, and associated method, to improve crystallographic texture and cavity fill for CVD aluminum/PVD aluminum alloy filmsTEXAS INSTRUMENTS INC·Filed 1999·Granted Mar 12, 2002·124 cites·7 claims
- 0279US6589865B2Low pressure, low temperature, semiconductor gap filling processTEXAS INSTRUMENTS INC·Filed 2001·Granted Jul 8, 2003·23 cites·12 claims
- 0376US8252699B2Composite removable hardmaskKONECNI ANTHONY·Filed 2010·Granted Aug 28, 2012·6 cites·19 claims
- 0471US6215186B1System and method of forming a tungstein plugTEXAS INSTRUMENTS INC·Filed 1999·Granted Apr 10, 2001·40 cites·5 claims
- 0571US5981382APVD deposition process for CVD aluminum liner processingTEXAS INSTRUMENTS INC·Filed 1998·Granted Nov 9, 1999·39 cites·21 claims
- 0665US6455419B1System and method of forming a tungsten plugTEXAS INSTRUMENTS INC·Filed 1999·Granted Sep 24, 2002·30 cites·7 claims
- 0765US6069072ACVD tin barrier layer for reduced electromigration of aluminum plugsTEXAS INSTRUMENTS INC·Filed 1998·Granted May 30, 2000·29 cites·11 claims
- 0861US6333265B1Low pressure, low temperature, semiconductor gap filling processTEXAS INSTRUMENTS INC·Filed 1996·Granted Dec 25, 2001·22 cites·4 claims
- 0957US5849367AElemental titanium-free liner and fabrication process for inter-metal connectionsTEXAS INSTRUMENTS INC·Filed 1996·Granted Dec 15, 1998·22 cites·6 claims
- 1049US6660650B1Selective aluminum plug formation and etchback processTEXAS INSTRUMENTS INC·Filed 1999·Granted Dec 9, 2003·15 cites·16 claims
- 1149US6291347B1Method and system for constructing semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2000·Granted Sep 18, 2001·2 cites·8 claims
- 1243US5926689AProcess for reducing circuit damage during PECVD in single wafer PECVD systemIBM·Filed 1995·Granted Jul 20, 1999·11 cites·3 claims
- 1341US2003168736A1Method and system for selectively coupling a conductive material to a surface of a semiconductor deviceFiled 2003·Application pending·0 cites
- 1439US2001049192A1Method and system for selectively coupling a conductive material to a surface of a semiconductor deviceFiled 2001·Application pending·0 cites
- 1535US2002048926A1Method for forming a self-aligned copper capping diffusion barrierFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →