Inventor · disambiguated record
Andrei Konstantinov
Also filed as: KONSTANTINOV ANDREI
47 granted patents·3 pending applications·618 citations·filing 1995–2023
98Inventor score
Files withFAIRCHILD SEMICONDUCTOR16SEMICONDUCTOR COMPONENTS IND LLC11ABB RESEARCH LTD8CREE INC6ACREO AB3
Top patents by PatentIndex Score
50 records- 0198US11476369B2SiC MOSFET with built-in Schottky diodeSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Oct 18, 2022·5 cites·20 claims
- 0297US8704546B2Method of manufacturing a SiC bipolar junction transistor and SiC bipolar junction transistor thereofFAIRCHILD SEMICONDUCTOR·Filed 2012·Granted Apr 22, 2014·34 cites·19 claims
- 0396US8994442B2Switching circuit and controller circuitFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Mar 31, 2015·20 cites·19 claims
- 0494US11894454B2Silicon carbide field-effect transistorsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
- 0592US7355223B2Vertical junction field effect transistor having an epitaxial gateCREE INC·Filed 2005·Granted Apr 8, 2008·26 cites·25 claims
- 0690US11171248B2Schottky rectifier with surge-current ruggednessSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Nov 9, 2021·4 cites·17 claims
- 0789US9893176B2Silicon-carbide trench gate MOSFETsFAIRCHILD SEMICONDUCTOR·Filed 2016·Granted Feb 13, 2018·5 cites·21 claims
- 0888US7279368B2Method of manufacturing a vertical junction field effect transistor having an epitaxial gateCREE INC·Filed 2005·Granted Oct 9, 2007·16 cites·25 claims
- 0987US10707340B2Low turn-on voltage silicon carbide rectifiersSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jul 7, 2020·4 cites·20 claims
- 1085US8785945B2SiC bipolar junction transistor with overgrown emitterFAIRCHILD SEMICONDUCTOR·Filed 2012·Granted Jul 22, 2014·5 cites·31 claims
- 1185US6100111AMethod for fabricating a silicon carbide deviceABB RESEARCH LTD·Filed 1998·Granted Aug 8, 2000·60 cites·13 claims
- 1285US5851908AMethod for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiCABB RESEARCH LTD·Filed 1995·Granted Dec 22, 1998·71 cites·12 claims
- 1384US5804482AMethod for producing a semiconductor device having a semiconductor layer of SiCABB RESEARCH LTD·Filed 1995·Granted Sep 8, 1998·75 cites·16 claims
- 1482US8421148B2Grid-UMOSFET with electric field shielding of gate oxideHARRIS CHRISTOPHER·Filed 2007·Granted Apr 16, 2013·10 cites·22 claims
- 1581US9461108B2SiC power device having a high voltage terminationFAIRCHILD SEMICONDUCTOR·Filed 2015·Granted Oct 4, 2016·3 cites·19 claims
- 1681US5654208AMethod for producing a semiconductor device having a semiconductor layer of SiC comprising a masking stepABB RESEARCH LTD·Filed 1995·Granted Aug 5, 1997·62 cites·12 claims
- 1780US12107173B2Schottky rectifier with surge-current ruggednessSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Oct 1, 2024·0 cites·16 claims
- 1880US11139394B2Silicon carbide field-effect transistorsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Oct 5, 2021·2 cites·21 claims
- 1980US5900648ASemiconductor device having an insulated gateABB RESEARCH LTD·Filed 1997·Granted May 4, 1999·46 cites·14 claims
- 2079US6306773B1Method of producing a semiconductor device of SiCFiled 2000·Granted Oct 23, 2001·33 cites·21 claims
- 2176US9741873B2Avalanche-rugged silicon carbide (SiC) power Schottky rectifierFAIRCHILD SEMICONDUCTOR·Filed 2016·Granted Aug 22, 2017·2 cites·19 claims
- 2276US9466709B2Silicon-carbide trench gate MOSFETsFAIRCHILD SEMICONDUCTOR·Filed 2015·Granted Oct 11, 2016·2 cites·19 claims
- 2375US9425262B2Configuration of portions of a power device within a silicon carbide crystalFAIRCHILD SEMICONDUCTOR·Filed 2015·Granted Aug 23, 2016·2 cites·20 claims
- 2474US11715804B2Schottky rectifier with surge-current ruggednessSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Aug 1, 2023·0 cites·17 claims
- 2574US9105557B2Schottky-barrier device with locally planarized surface and related semiconductor productFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Aug 11, 2015·2 cites·16 claims
- 2673US8946726B2Grid-UMOSFET with electric field shielding of gate oxideCREE INC·Filed 2013·Granted Feb 3, 2015·3 cites·22 claims
- 2772US10026805B2Avalanche-rugged silicon carbide (SiC) power deviceFAIRCHILD SEMICONDUCTOR·Filed 2017·Granted Jul 17, 2018·1 cites·20 claims
- 2869US9608056B2Schottky-barrier device and related semiconductor productFAIRCHILD SEMICONDUCTOR·Filed 2015·Granted Mar 28, 2017·1 cites·18 claims
- 2969US6127695ALateral field effect transistor of SiC, a method for production thereof and a use of such a transistorACREO AB·Filed 1999·Granted Oct 3, 2000·29 cites·30 claims
- 3068US9099517B2Bipolar junction transistor with spacer layerFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Aug 4, 2015·2 cites·22 claims
- 3166US2023055024A1Sic mosfet with built-in schottky diodeSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Application pending·0 cites
- 3264US5831292AIGBT having a vertical channelABB RESEARCH LTD·Filed 1996·Granted Nov 3, 1998·24 cites·6 claims
- 3361US7994017B2Method of manufacturing silicon carbide self-aligned epitaxial MOSFET for high powered device applicationsCREE INC·Filed 2009·Granted Aug 9, 2011·2 cites·20 claims
- 3461US6096627AMethod for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiCABB RESEARCH LTD·Filed 1998·Granted Aug 1, 2000·21 cites·17 claims
- 3559US10504989B2Avalanche-rugged silicon carbide (SiC) power deviceFAIRCHILD SEMICONDUCTOR·Filed 2018·Granted Dec 10, 2019·0 cites·20 claims
- 3656US8084813B2Short gate high power MOSFET and method of manufactureKONSTANTINOV ANDREI·Filed 2007·Granted Dec 27, 2011·2 cites·14 claims
- 3755US10355123B2Silicon-carbide trench gate MOSFETs and methods of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2017·Granted Jul 16, 2019·0 cites·20 claims
- 3855US7629616B2Silicon carbide self-aligned epitaxial MOSFET for high powered device applicationsCREE INC·Filed 2007·Granted Dec 8, 2009·1 cites·24 claims
- 3953US9515176B2Silicon carbide bipolar junction transistor including shielding regionsFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Dec 6, 2016·0 cites·21 claims
- 4053US5650638ASemiconductor device having a passivation layerABB RESEARCH LTD·Filed 1995·Granted Jul 22, 1997·19 cites·20 claims
- 4150US6278133B1Field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereofACREO AB·Filed 1999·Granted Aug 21, 2001·15 cites·23 claims
- 4249US8823410B2Method of manufacturing a SiC bipolar junction transistor and SiC bipolar junction transistor thereofKONSTANTINOV ANDREI·Filed 2011·Granted Sep 2, 2014·0 cites·20 claims
- 4347US11817478B2Termination structures with reduced dynamic output capacitance lossSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Nov 14, 2023·0 cites·20 claims
- 4447US2022131016A1Charge balanced rectifier with shieldingSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Application pending·0 cites
- 4546US9577045B2Silicon carbide power bipolar devices with deep acceptor dopingFAIRCHILD SEMICONDUCTOR·Filed 2015·Granted Feb 21, 2017·0 cites·24 claims
- 4645US10629686B2Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Apr 21, 2020·0 cites·20 claims
- 4740US6252250B1High power impatt diodeACREO AB·Filed 1999·Granted Jun 26, 2001·7 cites·25 claims
- 4840US2009224354A1Junction barrier schottky diode with submicron channelsCREE INC·Filed 2008·Application pending·0 cites
- 4939US7834396B2Lateral field effect transistor and its fabrication comprising a spacer layer above and below the channel layerCREE SWEDEN AB·Filed 2004·Granted Nov 16, 2010·0 cites·30 claims
- 5037US7646060B2Method and device of field effect transistor including a base shorted to a source regionCREE SWEDEN AB·Filed 2003·Granted Jan 12, 2010·0 cites·25 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →