Inventor · disambiguated record
Angelo Magri
Also filed as: MAGRI ANGELO · MAGRI PRIME ANGELO · MAGRÍ ANGELO
32 granted patents·3 pending applications·129 citations·filing 1997–2017
96Inventor score
Files withST MICROELECTRONICS SRL23MAGRI ANGELO6SGS THOMSON MICROELECTRONICS3FRISINA FERRUCCIO1SALINAS DARIO1
Top patents by PatentIndex Score
35 records- 0186US5981343ASingle feature size mos technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Nov 9, 1999·43 cites·35 claims
- 0285US8921211B2Vertical-conduction integrated electronic device and method for manufacturing thereofST MICROELECTRONICS SRL·Filed 2014·Granted Dec 30, 2014·5 cites·6 claims
- 0381US7875936B2Power MOS electronic device and corresponding realizing methodST MICROELECTRONICS SRL·Filed 2005·Granted Jan 25, 2011·6 cites·13 claims
- 0481US7569883B2Switching-controlled power MOS electronic deviceST MICROELECTRONICS SRL·Filed 2005·Granted Aug 4, 2009·7 cites·12 claims
- 0580US8637369B2Method for manufacturing an integrated power device having gate structures within trenchesMAGRI ANGELO·Filed 2012·Granted Jan 28, 2014·5 cites·20 claims
- 0680US7560368B2Insulated gate planar integrated power device with co-integrated Schottky diode and processST MICROELECTRONICS SRL·Filed 2006·Granted Jul 14, 2009·6 cites·2 claims
- 0773US8895370B2Vertical conduction power electronic device and corresponding realization methodST MICROELECTRONICS SRL·Filed 2013·Granted Nov 25, 2014·2 cites·19 claims
- 0873US7713853B2Method for manufacturing electronic devices integrated in a semiconductor substrate and corresponding devicesST MICROELECTRONICS SRL·Filed 2008·Granted May 11, 2010·4 cites·13 claims
- 0972US8664713B2Integrated power device on a semiconductor substrate having an improved trench gate structureMAGRI ANGELO·Filed 2009·Granted Mar 4, 2014·4 cites·39 claims
- 1069US7372142B2Vertical conduction power electronic device package and corresponding assembling methodST MICROELECTRONICS SRL·Filed 2005·Granted May 13, 2008·5 cites·20 claims
- 1166US7842574B2Method of manufacturing a semiconductor power deviceST MICROELECTRONICS SRL·Filed 2008·Granted Nov 30, 2010·5 cites·19 claims
- 1260US7205607B2Semiconductor power device with insulated gate and trench-gate structure and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2004·Granted Apr 17, 2007·9 cites·14 claims
- 1358US7067363B2Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances and high scaling down densityST MICROELECTRONICS SRL·Filed 2003·Granted Jun 27, 2006·7 cites·13 claims
- 1457US7800173B2Manufacturing process of a vertical-conduction MISFET device with gate dielectric structure having differentiated thickness and vertical-conduction MISFET device thus manufactureST MICROELECTRONICS SRL·Filed 2008·Granted Sep 21, 2010·2 cites·28 claims
- 1556US5985721ASingle feature size MOS technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Nov 16, 1999·10 cites·39 claims
- 1654US10505033B2Electronic device of vertical MOS type with termination trenches having variable depthST MICROELECTRONICS SRL·Filed 2017·Granted Dec 10, 2019·0 cites·20 claims
- 1754US7968412B2Manufacturing process of a vertical-conduction MISFET device with gate dielectric structure having differentiated thickness and vertical-conduction MISFET device thus manufactureST MICROELECTRONICS SRL·Filed 2010·Granted Jun 28, 2011·1 cites·18 claims
- 1853US9520468B2Integrated power device on a semiconductor substrate having an improved trench gate structureST MICROELECTRONICS SRL·Filed 2014·Granted Dec 13, 2016·0 cites·18 claims
- 1950US9647061B2Electronic device of vertical MOS type with termination trenches having variable depthST MICROELECTRONICS SRL·Filed 2015·Granted May 9, 2017·0 cites·21 claims
- 2050US9142646B2Integrated electronic device with edge-termination structure and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2015·Granted Sep 22, 2015·0 cites·30 claims
- 2150US8482085B2Power MOS electronic device and corresponding realizing methodMAGRI ANGELO·Filed 2010·Granted Jul 9, 2013·0 cites·14 claims
- 2250US8420487B2Power MOS electronic device and corresponding realizing methodMAGRI ANGELO·Filed 2010·Granted Apr 16, 2013·0 cites·10 claims
- 2349US9484404B2Electronic device of vertical MOS type with termination trenches having variable depthST MICROELECTRONICS SRL·Filed 2015·Granted Nov 1, 2016·0 cites·28 claims
- 2449US8283702B2Process for manufacturing a large-scale integration MOS device and corresponding MOS deviceSALINAS DARIO·Filed 2010·Granted Oct 9, 2012·1 cites·22 claims
- 2549US6468866B2Single feature size MOS technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1999·Granted Oct 22, 2002·7 cites·10 claims
- 2648US8624332B2Vertical conduction power electronic device and corresponding realization methodFRISINA FERRUCCIO·Filed 2005·Granted Jan 7, 2014·0 cites·19 claims
- 2747US8420525B2Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereofMAGRI ANGELO·Filed 2012·Granted Apr 16, 2013·0 cites·32 claims
- 2846US8101991B2Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereofMAGRI ANGELO·Filed 2007·Granted Jan 24, 2012·0 cites·9 claims
- 2942US8030192B2Process for manufacturing a large-scale integration MOS device and corresponding MOS deviceST MICROELECTRONICS SRL·Filed 2006·Granted Oct 4, 2011·0 cites·25 claims
- 3042US2004164304A1Insulated gate planar integrated power device with co-integrated schottky diode and processFiled 2003·Application pending·0 cites
- 3139US9070694B2Manufacturing of electronic devices in a wafer of semiconductor material having trenches with different directionsST MICROELECTRONICS SRL·Filed 2013·Granted Jun 30, 2015·0 cites·15 claims
- 3237US2007063272A1Semiconductor power device with insulated gate formed in a trench, and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2006·Application pending·0 cites
- 3336US2002113247A1Electronic device integrating an insulated gate bipolar transistor power device and a diode into a protective packageST MICROELECTRONICS SRL·Filed 2002·Application pending·0 cites
- 3434US7126173B2Method for enhancing the electric connection between a power electronic device and its packageST MICROELECTRONICS SRL·Filed 2002·Granted Oct 24, 2006·0 cites·33 claims
- 3534US7091558B2MOS power device with high integration density and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2004·Granted Aug 15, 2006·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →