Inventor · disambiguated record
Anthony Oates
Also filed as: OATES ANTHONY · OATES ANTHONY S
12 granted patents·2 pending applications·164 citations·filing 1992–2018
90Inventor score
Files withTAIWAN SEMICONDUCTOR MFG6TAIWAN SEMICONDUCTOR MFG CO LTD3LUCENT TECHNOLOGIES INC2AGERE SYST GUARDIAN CORP1AGERE SYSTEMS INC1
Top patents by PatentIndex Score
14 records- 0190US7471539B2High current interconnect structure for IC memory device programmingTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 30, 2008·17 cites·20 claims
- 0283US9818694B2Active atomic reservoir for enhancing electromigration reliability in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 14, 2017·4 cites·20 claims
- 0383US7768099B2MIM capacitor integrated into the damascene structure and method of making thereofTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 3, 2010·10 cites·15 claims
- 0478US5264377AIntegrated circuit electromigration monitorAT & T BELL LAB·Filed 1992·Granted Nov 23, 1993·67 cites·28 claims
- 0566US8018000B2Electrostatic discharge protection pattern for high voltage applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Sep 13, 2011·4 cites·15 claims
- 0659US6198301B1Method for determining the hot carrier lifetime of a transistorLUCENT TECHNOLOGIES INC·Filed 1998·Granted Mar 6, 2001·27 cites·38 claims
- 0757US6365503B1Method of improving electromigration in semiconductor device manufacturing processesAGERE SYST GUARDIAN CORP·Filed 2000·Granted Apr 2, 2002·6 cites·24 claims
- 0857US6187665B1Process for deuterium passivation and hot carrier immunityLUCENT TECHNOLOGIES INC·Filed 1999·Granted Feb 13, 2001·23 cites·21 claims
- 0947US11073428B2Conductive line-based temperature-sensing deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 27, 2021·0 cites·20 claims
- 1047US10652032B2Device signature generationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 12, 2020·0 cites·18 claims
- 1146US2007057305A1MIM capacitor integrated into the damascene structure and method of making thereofTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 1240US2010102872A1Dynamic Substrate Bias for PMOS Transistors to Alleviate NBTI DegradationTAIWAN SEMICONDUCTOR MFG·Filed 2008·Application pending·0 cites
- 1337US7462885B2ESD structure for high voltage ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 9, 2008·0 cites·17 claims
- 1436US6674151B1Deuterium passivated semiconductor device having enhanced immunity to hot carrier effectsAGERE SYSTEMS INC·Filed 1999·Granted Jan 6, 2004·6 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →