Inventor · disambiguated record
Andrew H. Peake
Also filed as: PEAKE ANDREW H
2 granted patents·15 citations·filing 1995–1995
58Inventor score
Technology areasH10D
Files withITT2
Top patents by PatentIndex Score
2 records- 0145US5536666AMethod for fabricating a planar ion-implanted GaAs MESFET with improved open-channel burnout characteristicsITT·Filed 1995·Granted Jul 16, 1996·10 cites·6 claims
- 0235US5565696APlanar ion-implanted GaAs MESFETS with improved open-channel burnout characteristicsITT·Filed 1995·Granted Oct 15, 1996·5 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →