Inventor · disambiguated record
Andrew J. Purdes
Also filed as: PURDES ANDREW J
18 granted patents·623 citations·filing 1982–1997
96Inventor score
Files withTEXAS INSTRUMENTS INC18
Top patents by PatentIndex Score
18 records- 0195US4512283APlasma reactor sidewall shieldTEXAS INSTRUMENTS INC·Filed 1983·Granted Apr 23, 1985·92 cites·24 claims
- 0289US4513021APlasma reactor with reduced chamber wall depositionTEXAS INSTRUMENTS INC·Filed 1983·Granted Apr 23, 1985·54 cites·6 claims
- 0386US5006203ADiamond growth methodTEXAS INSTRUMENTS INC·Filed 1988·Granted Apr 9, 1991·69 cites·9 claims
- 0485US4830984AMethod for heteroepitaxial growth using tensioning layer on rear substrate surfaceTEXAS INSTRUMENTS INC·Filed 1988·Granted May 16, 1989·70 cites·33 claims
- 0578US5114696ADiamond growth methodTEXAS INSTRUMENTS INC·Filed 1990·Granted May 19, 1992·40 cites·14 claims
- 0678US4681653APlanarized dielectric deposited using plasma enhanced chemical vapor depositionTEXAS INSTRUMENTS INC·Filed 1986·Granted Jul 21, 1987·51 cites·7 claims
- 0774US4450042APlasma etch chemistry for anisotropic etching of siliconTEXAS INSTRUMENTS INC·Filed 1982·Granted May 22, 1984·31 cites·17 claims
- 0873US5082522AMethod for forming patterned diamond thin filmsTEXAS INSTRUMENTS INC·Filed 1990·Granted Jan 21, 1992·52 cites·20 claims
- 0972US4878989AChemical beam epitaxy systemTEXAS INSTRUMENTS INC·Filed 1986·Granted Nov 7, 1989·28 cites·12 claims
- 1070US5935641AMethod of forming a piezoelectric layer with improved textureTEXAS INSTRUMENTS INC·Filed 1997·Granted Aug 10, 1999·22 cites·19 claims
- 1169US6139483AMethod of forming lateral resonant tunneling devicesTEXAS INSTRUMENTS INC·Filed 1993·Granted Oct 31, 2000·27 cites·5 claims
- 1264US4521275APlasma etch chemistry for anisotropic etching of siliconTEXAS INSTRUMENTS INC·Filed 1984·Granted Jun 4, 1985·21 cites·14 claims
- 1361US5556462AGrowth method by repeatedly measuring flux in MBE chamberTEXAS INSTRUMENTS INC·Filed 1994·Granted Sep 17, 1996·26 cites·6 claims
- 1452US5399521AMethod of semiconductor layer growth by MBETEXAS INSTRUMENTS INC·Filed 1993·Granted Mar 21, 1995·18 cites·11 claims
- 1543US4699085AChemical beam epitaxy systemTEXAS INSTRUMENTS INC·Filed 1986·Granted Oct 13, 1987·6 cites·7 claims
- 1640US5170329AStress free chip mount and method of manufactureTEXAS INSTRUMENTS INC·Filed 1991·Granted Dec 8, 1992·10 cites·17 claims
- 1731US5952059AForming a piezoelectric layer with improved textureTEXAS INSTRUMENTS INC·Filed 1997·Granted Sep 14, 1999·1 cites·9 claims
- 1831US5175019AMethod for depositing a thin filmTEXAS INSTRUMENTS INC·Filed 1991·Granted Dec 29, 1992·5 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →