Inventor · disambiguated record
Andrew P. Ritenour
Also filed as: RITENOUR ANDREW · RITENOUR ANDREW P
31 granted patents·4 pending applications·1,225 citations·filing 1999–2019
97Inventor score
Files withRF MICRO DEVICES INC12E INK CORP10SHERIDAN DAVID C4MASSACHUSETTS INST TECHNOLOGY2QORVO US INC2
Top patents by PatentIndex Score
35 records- 0199US7598173B2Electro-optic displays, and components for use thereinE INK CORP·Filed 2006·Granted Oct 6, 2009·114 cites·10 claims
- 0298US9419024B2Methods for forming patterned semiconductorsE INK CORP·Filed 2015·Granted Aug 16, 2016·30 cites·2 claims
- 0398US8389381B2Processes for forming backplanes for electro-optic displaysAMUNDSON KARL R·Filed 2010·Granted Mar 5, 2013·60 cites·16 claims
- 0498US8373211B2Field effect transistorE INK CORP·Filed 2011·Granted Feb 12, 2013·57 cites·7 claims
- 0598US7785988B2Processes for forming backplanes for electro-optic displaysE INK CORP·Filed 2008·Granted Aug 31, 2010·80 cites·13 claims
- 0698US7605799B2Backplanes for display applications, and components for use thereinE INK CORP·Filed 2006·Granted Oct 20, 2009·159 cites·24 claims
- 0798US7442587B2Processes for forming backplanes for electro-optic displaysE INK CORP·Filed 2006·Granted Oct 28, 2008·157 cites·18 claims
- 0898US7223672B2Processes for forming backplanes for electro-optic displaysE INK CORP·Filed 2003·Granted May 29, 2007·223 cites·24 claims
- 0998US7190008B2Electro-optic displays, and components for use thereinE INK CORP·Filed 2004·Granted Mar 13, 2007·239 cites·16 claims
- 1090US9093420B2Methods for fabricating high voltage field effect transistor finger terminationsRF MICRO DEVICES INC·Filed 2013·Granted Jul 28, 2015·9 cites·19 claims
- 1190US8202772B2Vertical junction field effect transistors having sloped sidewalls and methods of makingSHERIDAN DAVID C·Filed 2010·Granted Jun 19, 2012·9 cites·18 claims
- 1289US8466017B2Methods of making semiconductor devices having implanted sidewalls and devices made therebySHERIDAN DAVID C·Filed 2010·Granted Jun 18, 2013·11 cites·20 claims
- 1387US9136341B2High voltage field effect transistor finger terminationsRF MICRO DEVICES INC·Filed 2013·Granted Sep 15, 2015·7 cites·21 claims
- 1487US8988097B2Method for on-wafer high voltage testing of semiconductor devicesRF MICRO DEVICES INC·Filed 2013·Granted Mar 24, 2015·7 cites·20 claims
- 1586US8058655B2Vertical junction field effect transistors having sloped sidewalls and methods of makingSHERIDAN DAVID C·Filed 2009·Granted Nov 15, 2011·9 cites·20 claims
- 1683US9640632B2Semiconductor device having improved heat dissipationRF MICRO DEVICES INC·Filed 2015·Granted May 2, 2017·3 cites·10 claims
- 1783US9129802B2Lateral semiconductor device with vertical breakdown regionRF MICRO DEVICES INC·Filed 2013·Granted Sep 8, 2015·6 cites·18 claims
- 1877US9917080B2Semiconductor device with electrical overstress (EOS) protectionRF MICRO DEVICES INC·Filed 2013·Granted Mar 13, 2018·3 cites·21 claims
- 1977US9632389B2Backplane for electro-optic displayE INK CORP·Filed 2016·Granted Apr 25, 2017·1 cites·9 claims
- 2075US6346446B1Methods of forming features of integrated circuits using modified buried layersMASSACHUSETTS INST TECHNOLOGY·Filed 1999·Granted Feb 12, 2002·34 cites·31 claims
- 2174US9147632B2Semiconductor device having improved heat dissipationRF MICRO DEVICES INC·Filed 2013·Granted Sep 29, 2015·2 cites·10 claims
- 2265US9455327B2Schottky gated transistor with interfacial layerRF MICRO DEVICES INC·Filed 2015·Granted Sep 27, 2016·1 cites·19 claims
- 2365US7994548B2Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of makingSEMISOUTH LAB INC·Filed 2008·Granted Aug 9, 2011·2 cites·19 claims
- 2460US2009315044A1Electro-optic displays, and components for use thereinE INK CORP·Filed 2009·Application pending·0 cites
- 2556US11522518B2Device having a titanium-alloyed surfaceQORVO US INC·Filed 2019·Granted Dec 6, 2022·0 cites·4 claims
- 2655US8659057B2Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of makingRITENOUR ANDREW·Filed 2011·Granted Feb 25, 2014·1 cites·20 claims
- 2753US8513675B2Vertical junction field effect transistors having sloped sidewalls and methods of makingSHERIDAN DAVID C·Filed 2012·Granted Aug 20, 2013·0 cites·19 claims
- 2852US9564497B2High voltage field effect transitor finger terminationsRF MICRO DEVICES INC·Filed 2015·Granted Feb 7, 2017·0 cites·7 claims
- 2952US9142620B2Power device packaging having backmetals couple the plurality of bond pads to the die backsideRF MICRO DEVICES INC·Filed 2013·Granted Sep 22, 2015·1 cites·19 claims
- 3049US10581403B2Device having a titanium-alloyed surfaceQORVO US INC·Filed 2017·Granted Mar 3, 2020·0 cites·19 claims
- 3147US2013011979A1Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of makingSS SC IP LLC·Filed 2012·Application pending·0 cites
- 3245US9202874B2Gallium nitride (GaN) device with leakage current-based over-voltage protectionRF MICRO DEVICES INC·Filed 2013·Granted Dec 1, 2015·0 cites·14 claims
- 3342US2006099782A1Method for forming an interface between germanium and other materialsMASSACHUSETTS INST TECHNOLOGY·Filed 2005·Application pending·0 cites
- 3439US2014055192A1Saturation current limiting circuit topology for power transistorsRF MICRO DEVICES INC·Filed 2013·Application pending·0 cites
- 3532US8884270B2Vertical junction field effect transistors with improved thermal characteristics and methods of makingCASADY JANNA·Filed 2012·Granted Nov 11, 2014·0 cites·27 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →