Inventor · disambiguated record
Angeline Smith
Also filed as: SMITH ANGELINE · SMITH ANGELINE K · SMITH ANGELINE KLEMM
20 granted patents·5 pending applications·22 citations·filing 2015–2023
90Inventor score
Top patents by PatentIndex Score
25 records- 0192US11062752B2Spin orbit torque memory devices and methods of fabricationINTEL CORP·Filed 2019·Granted Jul 13, 2021·5 cites·8 claims
- 0287US11276730B2Spin orbit torque memory devices and methods of fabricationINTEL CORP·Filed 2019·Granted Mar 15, 2022·3 cites·17 claims
- 0386US11367749B2Spin orbit torque (SOT) memory devices and their methods of fabricationINTEL CORP·Filed 2018·Granted Jun 21, 2022·3 cites·14 claims
- 0485US11063088B2Magnetic memory devices and methods of fabricationINTEL CORP·Filed 2019·Granted Jul 13, 2021·3 cites·22 claims
- 0582US11374164B2Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memoryINTEL CORP·Filed 2018·Granted Jun 28, 2022·3 cites·21 claims
- 0677US11557629B2Spin orbit memory devices with reduced magnetic moment and methods of fabricationINTEL CORP·Filed 2019·Granted Jan 17, 2023·2 cites·19 claims
- 0773US10943950B2Magnetic memory devices with enhanced tunnel magnetoresistance ratio (TMR) and methods of fabricationINTEL CORP·Filed 2019·Granted Mar 9, 2021·1 cites·20 claims
- 0868US11476412B2Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memoryINTEL CORP·Filed 2018·Granted Oct 18, 2022·2 cites·20 claims
- 0954US11437567B2Perpendicular spin transfer torque magnetic mechanismINTEL CORP·Filed 2016·Granted Sep 6, 2022·0 cites·19 claims
- 1053US2017082697A1Spin hall effect magnetic structuresUNIV MINNESOTA·Filed 2015·Application pending·0 cites
- 1153US2025218901A1Backside contact placeholder formation with improved process controlINTEL CORP·Filed 2023·Application pending·0 cites
- 1250US11508903B2Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performanceINTEL CORP·Filed 2018·Granted Nov 22, 2022·0 cites·19 claims
- 1350US11411173B2Perpendicular spin transfer torque devices with improved retention and thermal stabilityINTEL CORP·Filed 2018·Granted Aug 9, 2022·0 cites·20 claims
- 1449US11737368B2Magnetic memory devices and methods of fabricationINTEL CORP·Filed 2019·Granted Aug 22, 2023·0 cites·8 claims
- 1549US11594673B2Two terminal spin orbit memory devices and methods of fabricationINTEL CORP·Filed 2019·Granted Feb 28, 2023·0 cites·20 claims
- 1648US11444237B2Spin orbit torque (SOT) memory devices and methods of fabricationINTEL CORP·Filed 2018·Granted Sep 13, 2022·0 cites·9 claims
- 1747US11770979B2Conductive alloy layer in magnetic memory devices and methods of fabricationINTEL CORP·Filed 2018·Granted Sep 26, 2023·0 cites·14 claims
- 1847US11362263B2Spin orbit torque (SOT) memory devices and methods of fabricationINTEL CORP·Filed 2018·Granted Jun 14, 2022·0 cites·20 claims
- 1946US11380838B2Magnetic memory devices with layered electrodes and methods of fabricationINTEL CORP·Filed 2018·Granted Jul 5, 2022·0 cites·22 claims
- 2045US11683939B2Spin orbit memory devices with dual electrodes, and methods of fabricationINTEL CORP·Filed 2019·Granted Jun 20, 2023·0 cites·20 claims
- 2143US11616192B2Magnetic memory devices with a transition metal dopant at an interface of free magnetic layers and methods of fabricationINTEL CORP·Filed 2018·Granted Mar 28, 2023·0 cites·12 claims
- 2242US11476408B2Spin orbit torque (SOT) memory devices with enhanced magnetic anisotropy and methods of fabricationINTEL CORP·Filed 2018·Granted Oct 18, 2022·0 cites·20 claims
- 2338US2020313076A1Spin orbit memory devices with enhanced tunneling magnetoresistance ratio (tmr) and methods of fabricationINTEL CORP·Filed 2019·Application pending·0 cites
- 2437US2020105324A1Multi-magnet stabilized spin orbit torque mramINTEL CORP·Filed 2018·Application pending·0 cites
- 2536US2020313074A1Magnetic memory devices and methods of fabricationINTEL CORP·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →