Inventor · disambiguated record
Andrew E. Souzis
Also filed as: SOUZIS ANDREW E
8 granted patents·2 pending applications·54 citations·filing 2005–2024
84Inventor score
Top patents by PatentIndex Score
10 records- 0194US9090989B2Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereofII VI INC·Filed 2013·Granted Jul 28, 2015·8 cites·21 claims
- 0293US8216369B2System for forming SiC crystals having spatially uniform doping impuritiesGUPTA AVINASH K·Filed 2009·Granted Jul 10, 2012·18 cites·9 claims
- 0391US7608524B2Method of and system for forming SiC crystals having spatially uniform doping impuritiesII VI INC·Filed 2006·Granted Oct 27, 2009·22 cites·9 claims
- 0479US8741413B2Large diameter, high quality SiC single crystals, method and apparatusII VI INC·Filed 2013·Granted Jun 3, 2014·4 cites·27 claims
- 0578US2024352617A1Vanadium-compensated 4h and 6h single crystals of optical grade, and silicon carbide crystals and methods for producing sameII VI ADVANCED MAT LLC·Filed 2024·Application pending·0 cites
- 0670US12060650B2Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing sameII VI DELAWARE INC·Filed 2021·Granted Aug 13, 2024·0 cites·8 claims
- 0770USRE46315ELarge diameter, high quality SiC single crystals, method and apparatusII VI INC·Filed 2014·Granted Feb 21, 2017·2 cites·27 claims
- 0867US12006591B2Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second materialII VI DELAWARE INC·Filed 2020·Granted Jun 11, 2024·0 cites·13 claims
- 0962USRE48378EVanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereofII VI DELAWARE INC·Filed 2017·Granted Jan 5, 2021·0 cites·28 claims
- 1040US2008190355A1Low-Doped Semi-Insulating Sic Crystals and MethodII VI INC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →