Inventor · disambiguated record
Anurag Tyagi
Also filed as: TYAGI ANURAG
30 granted patents·10 pending applications·120 citations·filing 2008–2024
96Inventor score
Top patents by PatentIndex Score
40 records- 0198US11424289B2In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodesMETA PLATFORMS TECH LLC·Filed 2020·Granted Aug 23, 2022·4 cites·30 claims
- 0297US11749964B2Monolithic light source with integrated optics based on nonlinear frequency conversionMETA PLATFORMS TECH LLC·Filed 2020·Granted Sep 5, 2023·5 cites·17 claims
- 0394US9934213B1System and method for detecting and mapping data fields for forms in a financial management systemINTUIT INC·Filed 2015·Granted Apr 3, 2018·27 cites·26 claims
- 0492US8114698B2High light extraction efficiency nitride based light emitting diode by surface rougheningZHONG HONG·Filed 2008·Granted Feb 14, 2012·17 cites·8 claims
- 0591US11354495B2System and method for reliable extraction and mapping of data to and from customer formsINTUIT INC·Filed 2020·Granted Jun 7, 2022·4 cites·20 claims
- 0691US11120512B1System and method for detecting and mapping data fields for forms in a financial management systemINTUIT INC·Filed 2017·Granted Sep 14, 2021·12 cites·26 claims
- 0788US8481991B2Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocationsOHTA HIROAKI·Filed 2010·Granted Jul 9, 2013·8 cites·27 claims
- 0887US9040326B2High light extraction efficiency nitride based light emitting diode by surface rougheningUNIV CALIFORNIA·Filed 2014·Granted May 26, 2015·5 cites·20 claims
- 0986US9236530B2Miscut bulk substratesCHAKRABORTY ARPAN·Filed 2012·Granted Jan 12, 2016·6 cites·18 claims
- 1085US11099393B2Surface emitting light source with lateral variant refractive index profileFACEBOOK TECH LLC·Filed 2019·Granted Aug 24, 2021·4 cites·29 claims
- 1183US10853567B2System and method for reliable extraction and mapping of data to and from customer formsINTUIT INC·Filed 2017·Granted Dec 1, 2020·4 cites·27 claims
- 1282US8835200B2High light extraction efficiency nitride based light emitting diode by surface rougheningZHONG HONG·Filed 2012·Granted Sep 16, 2014·4 cites·22 claims
- 1382US8227819B2Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodesZHONG HONG·Filed 2011·Granted Jul 24, 2012·3 cites·14 claims
- 1480US11972895B1Apparatus, system, and method for stepping up high voltages within small form factors via optical couplings including an array of photovoltaic cells optically coupled to parallelly connected light emitting devices via a transfer mediumMETA PLATFORMS TECH LLC·Filed 2020·Granted Apr 30, 2024·1 cites·20 claims
- 1579US11869922B2In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodesMETA PLATFORMS TECH LLC·Filed 2022·Granted Jan 9, 2024·0 cites·20 claims
- 1679US11677042B2Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodesMETA PLATFORMS TECH LLC·Filed 2020·Granted Jun 13, 2023·1 cites·9 claims
- 1779US8541869B2Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substratesNAKAMURA SHUJI·Filed 2008·Granted Sep 24, 2013·5 cites·10 claims
- 1878US8044383B2Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodesUNIV CALIFORNIA·Filed 2009·Granted Oct 25, 2011·5 cites·15 claims
- 1977US2025052926A1High refractive index birefringent organic solid crystal and methods of making thereofMETA PLATFORMS TECH LLC·Filed 2024·Application pending·0 cites
- 2070US9646827B1Method for smoothing surface of a substrate containing gallium and nitrogenCHAKRABORTY ARPAN·Filed 2012·Granted May 9, 2017·2 cites·26 claims
- 2168US12140730B2High refractive index birefringent organic solid crystal and methods of making thereofMETA PLATFORMS TECH LLC·Filed 2021·Granted Nov 12, 2024·0 cites·18 claims
- 2268US11889717B2Light emission display element and device with polarized and angularly-controlled outputMETA PLATFORMS TECH LLC·Filed 2021·Granted Jan 30, 2024·0 cites·24 claims
- 2368US9159553B2Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerfaceOHTA HIROAKI·Filed 2010·Granted Oct 13, 2015·2 cites·21 claims
- 2467US2025079791A1Laser array device having individually-addressable cathodeMETA PLATFORMS TECH LLC·Filed 2024·Application pending·0 cites
- 2563US11734771B2System and method for detecting and mapping data fields for forms in a financial management systemINTUIT INC·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 2661US11552452B2Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-directionUNIV CALIFORNIA·Filed 2018·Granted Jan 10, 2023·0 cites·21 claims
- 2760US2025155787A1Zone illuminated reflective displayMETA PLATFORMS TECH LLC·Filed 2024·Application pending·0 cites
- 2858US8853669B2Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterningSPECK JAMES S·Filed 2011·Granted Oct 7, 2014·1 cites·26 claims
- 2957US8866126B2Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocationsUNIV CALIFORNIA·Filed 2013·Granted Oct 21, 2014·0 cites·22 claims
- 3056US11810908B2Wafer-level 3D integration of high voltage optical transformerMETA PLATFORMS TECH LLC·Filed 2021·Granted Nov 7, 2023·0 cites·16 claims
- 3156US2014376584A1Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocationsUNIV CALIFORNIA·Filed 2014·Application pending·0 cites
- 3255US9917422B2Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-directionUNIV CALIFORNIA·Filed 2015·Granted Mar 13, 2018·0 cites·20 claims
- 3354US9653650B2Method and system for epitaxy processes on miscut bulk substratesSORAA INC·Filed 2016·Granted May 16, 2017·0 cites·20 claims
- 3453US2023384489A1Metasurface-manipulated emission from a partially spatially coherent sourceUNIV ROCHESTER·Filed 2023·Application pending·0 cites
- 3552US2023393317A1Tunable reflective polarizerMETA PLATFORMS TECH LLC·Filed 2023·Application pending·0 cites
- 3652US2022231192A1Current aperture in micro-led through stress relaxationFACEBOOK TECH LLC·Filed 2021·Application pending·0 cites
- 3745US2021126164A1Red micro-led with dopants in active regionFACEBOOK TECH LLC·Filed 2020·Application pending·0 cites
- 3844US9077151B2Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-directionHSU PO SHAN·Filed 2011·Granted Jul 7, 2015·0 cites·28 claims
- 3937US2011170569A1Semipolar iii-nitride laser diodes with etched mirrorsUNIV CALIFORNIA·Filed 2010·Application pending·0 cites
- 4030US2012100650A1Vicinal semipolar iii-nitride substrates to compensate tilt of relaxed hetero-epitaxial layersSPECK JAMES S·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →