Inventor · disambiguated record
Anabela Veloso
Also filed as: VELOSO ANABELA
14 granted patents·8 pending applications·36 citations·filing 2006–2024
88Inventor score
Top patents by PatentIndex Score
22 records- 0184US9633891B2Method for forming a transistor structure comprising a fin-shaped channel structureIMEC VZW·Filed 2015·Granted Apr 25, 2017·4 cites·12 claims
- 0282US7709380B2Method for gate electrode height controlIMEC·Filed 2006·Granted May 4, 2010·12 cites·20 claims
- 0376US7759748B2Semiconductor device with reduced diffusion of workfunction modulating elementIMEC·Filed 2007·Granted Jul 20, 2010·7 cites·23 claims
- 0475US11201093B2Method of manufacturing a semiconductor device including the horizontal channel FET and the vertical channel FETIMEC VZW·Filed 2020·Granted Dec 14, 2021·1 cites·19 claims
- 0573US11018235B2Vertically stacked semiconductor devices having vertical channel transistorsIMEC VZW·Filed 2016·Granted May 25, 2021·2 cites·19 claims
- 0668US8313993B2Semiconductor device and method for fabricating the sameCHO HAG-JU·Filed 2009·Granted Nov 20, 2012·5 cites·15 claims
- 0767US8524554B2Semiconductor device and method for fabricating the sameIMEC·Filed 2012·Granted Sep 3, 2013·2 cites·20 claims
- 0864US10957793B2Method of forming target layer surrounding vertical nanostructureIMEC VZW·Filed 2018·Granted Mar 23, 2021·1 cites·15 claims
- 0963US2025194131A1Method for Forming a Semiconductor DeviceIMEC VZW·Filed 2024·Application pending·0 cites
- 1056US7491635B2Method for forming a fully silicided gate and devices obtained thereofIMEC INTER UNI MICRO ELECTR·Filed 2006·Granted Feb 17, 2009·2 cites·10 claims
- 1152US12362236B2Method of producing an integrated circuit chip including a back-side power delivery networkIMEC VZW·Filed 2022·Granted Jul 15, 2025·0 cites·11 claims
- 1252US2024178051A1Method for Forming a Semiconductor DeviceIMEC VZW·Filed 2023·Application pending·0 cites
- 1347US11088263B2Method of forming vertical field effect transistor deviceIMEC VZW·Filed 2020·Granted Aug 10, 2021·0 cites·17 claims
- 1445US11217488B2Method of forming a semiconductor deviceIMEC VZW·Filed 2020·Granted Jan 4, 2022·0 cites·21 claims
- 1544US2008136030A1Semiconductor device comprising a doped metal comprising main electrodeIMEC INTER UNI MICRO ELECTR·Filed 2007·Application pending·0 cites
- 1641US12432985B2Strained semiconductor monocrystalline nanostructureIMEC VZW·Filed 2021·Granted Sep 30, 2025·0 cites·22 claims
- 1741US2020312725A1Method of forming a semiconductor deviceIMEC VZW·Filed 2020·Application pending·0 cites
- 1840US2019198643A1Vertical channel device and method of forming sameIMEC VZW·Filed 2018·Application pending·0 cites
- 1937US9972622B2Method for manufacturing a CMOS device and associated deviceIMEC VZW·Filed 2016·Granted May 15, 2018·0 cites·19 claims
- 2036US2008191286A1Methods for manufacturing a CMOS device with dual dielectric layersIMEC INTER UNI MICRO ELECTR·Filed 2008·Application pending·0 cites
- 2136US2019081156A1Method for Forming a Vertical Channel Device, and a Vertical Channel DeviceIMEC VZW·Filed 2018·Application pending·0 cites
- 2233US2006263961A1Method for Forming Dual Fully Silicided Gates and Devices with Dual Fully Silicided GatesTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →