Inventor · disambiguated record
An Chyi Wei
Also filed as: WEI AN C · WEI AN CHYI
34 granted patents·13 pending applications·612 citations·filing 2005–2025
96Inventor score
Top patents by PatentIndex Score
47 records- 0196US11329140B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·4 cites·20 claims
- 0296US8076230B2Method of forming self-aligned contacts and local interconnectsWEI AN CHYI·Filed 2009·Granted Dec 13, 2011·543 cites·30 claims
- 0395US12015071B2Air spacers around contact plugs and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·2 cites·20 claims
- 0495US11996466B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 0595US11437498B2FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·4 cites·20 claims
- 0694US11996468B2Multi-gate device fabrication and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·3 cites·20 claims
- 0793US10276449B1Method for forming fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·11 cites·20 claims
- 0892US11355616B2Air spacers around contact plugs and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·3 cites·20 claims
- 0990US10861960B1FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·5 cites·20 claims
- 1088US11282967B2Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·2 cites·20 claims
- 1188US10714347B2Cut metal gate processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·3 cites·20 claims
- 1288US10515952B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·4 cites·20 claims
- 1387US11923359B2Method for forming fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·1 cites·20 claims
- 1486US9449821B2Composite hard mask etching profile for preventing pattern collapse in high-aspect-ratio trenchesMACRONIX INT CO LTD·Filed 2014·Granted Sep 20, 2016·8 cites·16 claims
- 1585US11508582B2Cut metal gate processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·1 cites·21 claims
- 1683US12408412B2Air spacers around contact plugs and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
- 1782US10879074B2Method of forming semiconductor device and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 29, 2020·1 cites·20 claims
- 1882US7575990B2Method of forming self-aligned contacts and local interconnectsMACRONIX INT CO LTD·Filed 2005·Granted Aug 18, 2009·10 cites·26 claims
- 1982US2024379820A1Air spacer and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2081US11990341B2Cut metal gate processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 2181US2024178224A1Method for forming fin field effect transistor (finfet) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2281US2025301757A1Air spacers around contact plugs and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2380US12107149B2Air spacer and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 2478US11063043B2Method for forming fin field effect transistor (FinFet) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·1 cites·20 claims
- 2577US2024290869A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2676US11735651B2FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 2776US11652155B2Air spacer and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 16, 2023·0 cites·20 claims
- 2873US12068398B2Fin field-effect transistor with void and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 2973US2024371980A1Fin Field-Effect Transistor With Void and Method of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3073US2024313090A1Multi-gate device fabrication and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3170US11349014B2Air spacer and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·0 cites·20 claims
- 3270US2024387528A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3369US9349746B1Method of fabricating deep trench semiconductor devices, and deep trench semiconductor devicesMACRONIX INT CO LTD·Filed 2015·Granted May 24, 2016·2 cites·26 claims
- 3465US11961919B2Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 3562US12243872B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 3659US7723229B2Process of forming a self-aligned contact in a semiconductor deviceMACRONIX INT CO LTD·Filed 2005·Granted May 25, 2010·2 cites·28 claims
- 3759US2025374614A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3857US10672613B2Method of forming semiconductor structure and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·0 cites·20 claims
- 3955US2024355906A1Sti loss mitigation by radical oxidation treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4054US11664444B2Fin field-effect transistor with void and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 4154US2024072156A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4251US9252153B1Method of word-line formation by semi-damascene process with thin protective conductor layerMACRONIX INT CO LTD·Filed 2014·Granted Feb 2, 2016·0 cites·8 claims
- 4349US9190467B2Semiconductor structure and manufacturing method of the sameMACRONIX INT CO LTD·Filed 2014·Granted Nov 17, 2015·0 cites·20 claims
- 4445US7410593B2Plasma etching methods using nitrogen memory species for sustaining glow dischargeMACRONIX INT CO LTD·Filed 2006·Granted Aug 12, 2008·0 cites·17 claims
- 4543US2016020119A1Method of Controlling Recess Depth and Bottom ECD in Over-EtchingMACRONIX INT CO LTD·Filed 2014·Application pending·0 cites
- 4639US2016172294A1High aspect ratio structureMACRONIX INT CO LTD·Filed 2014·Application pending·0 cites
- 4738US2007246063A1Method of performing a pressure calibration during waferless autoclean processMACRONIX INT CO LTD·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →