Inventor · disambiguated record
Aristos Christou
Also filed as: CHRISTOU ARISTOS · DAVEY JOHN E
11 granted patents·295 citations·filing 1978–1989
92Inventor score
Top patents by PatentIndex Score
11 records- 0191US4179604AElectron collector for forming low-loss electron imagesUS NAVY·Filed 1978·Granted Dec 18, 1979·33 cites·10 claims
- 0290US4188710AOhmic contacts for group III-V n-type semiconductors using epitaxial germanium filmsUS NAVY·Filed 1978·Granted Feb 19, 1980·47 cites·14 claims
- 0387US4330343ARefractory passivated ion-implanted GaAs ohmic contactsUS NAVY·Filed 1980·Granted May 18, 1982·47 cites·11 claims
- 0476US4179533AMulti-refractory films for gallium arsenide devicesUS NAVY·Filed 1978·Granted Dec 18, 1979·27 cites·7 claims
- 0572US4975387AFormation of epitaxial si-ge heterostructures by solid phase epitaxyUS NAVY·Filed 1989·Granted Dec 4, 1990·41 cites·16 claims
- 0672US4263605AIon-implanted, improved ohmic contacts for GaAs semiconductor devicesUS NAVY·Filed 1979·Granted Apr 21, 1981·17 cites·6 claims
- 0766US4316201ALow-barrier-height epitaxial Ge-GaAs mixer diodeUS NAVY·Filed 1980·Granted Feb 16, 1982·20 cites·14 claims
- 0860US4226649AMethod for epitaxial growth of GaAs films and devices configuration independent of GaAs substrate utilizing molecular beam epitaxy and substrate removal techniquesUS NAVY·Filed 1979·Granted Oct 7, 1980·20 cites·18 claims
- 0953US4927782AMethod of making self-aligned GaAs/AlGaAs FET'sUS NAVY·Filed 1989·Granted May 22, 1990·15 cites·12 claims
- 1051US4298403AIon-implanted evaporated germanium layers as n+ contacts to GaAsDAVEY JOHN E·Filed 1980·Granted Nov 3, 1981·13 cites·11 claims
- 1149US4267014ASemiconductor encapsulant for annealing ion-implanted GaAsUS NAVY·Filed 1980·Granted May 12, 1981·15 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →