Inventor · disambiguated record
Armin Dadgar
Also filed as: DADGAR ARMIN
15 granted patents·10 pending applications·93 citations·filing 2002–2022
90Inventor score
Files withDADGAR ARMIN8AZUR SPACE SOLAR POWER GMBH4UNIV OTTO VON GUERICKE MAGDEBURG3AIXTRON AG2AZZURO SEMICONDUCTORS AG1
Top patents by PatentIndex Score
25 records- 0189US11424596B2Semiconductor layer stack and method for producing sameUNIV OTTO VON GUERICKE MAGDEBURG·Filed 2020·Granted Aug 23, 2022·2 cites·9 claims
- 0287US7078318B2Method for depositing III-V semiconductor layers on a non-III-V substrateAIXTRON AG·Filed 2004·Granted Jul 18, 2006·42 cites·18 claims
- 0381US12376424B2Nitride semiconductor component and process for its productionAZUR SPACE SOLAR POWER GMBH·Filed 2022·Granted Jul 29, 2025·0 cites·13 claims
- 0480US12364059B2Nitride semiconductor component and process for its productionAZUR SPACE SOLAR POWER GMBH·Filed 2022·Granted Jul 15, 2025·0 cites·6 claims
- 0580US12272761B2Nitride semiconductor component and process for its productionAZUR SPACE SOLAR POWER GMBH·Filed 2022·Granted Apr 8, 2025·0 cites·15 claims
- 0680US7128786B2Process for depositing III-V semiconductor layers on a non-III-V substrateAIXTRON AG·Filed 2004·Granted Oct 31, 2006·25 cites·20 claims
- 0775US9406505B2Nitride semiconductor component and process for its productionDADGAR ARMIN·Filed 2006·Granted Aug 2, 2016·5 cites·20 claims
- 0870US7505150B2Device and method for the measurement of the curvature of a surfaceLAYTEC GMBH·Filed 2006·Granted Mar 17, 2009·10 cites·26 claims
- 0966US11870220B2Semiconductor layer stack and method for producing sameUNIV OTTO VON GUERICKE MAGDEBURG·Filed 2022·Granted Jan 9, 2024·0 cites·15 claims
- 1061US11097125B2Micro-electrode array and method for producing a micro-electrode arrayLEIBNIZ INST FUER NEUROBIOLOGIE MAGDEBURG·Filed 2017·Granted Aug 24, 2021·2 cites·14 claims
- 1158US7935987B2Epitaxial group III nitride layer on (001)-oriented group IV semiconductorAZZURO SEMICONDUCTORS AG·Filed 2007·Granted May 3, 2011·3 cites·14 claims
- 1257US12125938B2Nitride semiconductor component and process for its productionAZUR SPACE SOLAR POWER GMBH·Filed 2016·Granted Oct 22, 2024·0 cites·17 claims
- 1352US8203255B2Piezoelectric sensor arrangement comprising a thin layer shear wave resonator based on epitactically grown piezoelectric layersLOSCHONSKY MARC·Filed 2007·Granted Jun 19, 2012·4 cites·12 claims
- 1447US12494365B2Method for growing a semiconductor assembly and semiconductor assemblyUNIV OTTO VON GUERICKE MAGDEBURG·Filed 2021·Granted Dec 9, 2025·0 cites·19 claims
- 1541US10673207B2Light-emitting semiconductor device, light-emitting semiconductor component and method for producing a light-emitting semiconductor deviceOSRAM OPTO SEMICONDUCTORS GMBH·Filed 2016·Granted Jun 2, 2020·0 cites·6 claims
- 1640US2010133658A1Nitride semiconductor component layer structure on a group iv substrate surfaceDADGAR ARMIN·Filed 2008·Application pending·0 cites
- 1740US2008150085A1Gruppe-iii-nitrid-halbleiterbauelement mit hoch p-leitfahiger schichtDADGAR ARMIN·Filed 2007·Application pending·0 cites
- 1838US2009199763A1Process for the production of gan or aigan crystalsDADGAR ARMIN·Filed 2005·Application pending·0 cites
- 1938US2005025909A1Method for the production of III-V laser componentsFiled 2004·Application pending·0 cites
- 2035US2018130927A1Component having a transparent conductive nitride layerOTTO VON GUERICKE UNIV MAGDEBURG TTZ PATENTWESEN·Filed 2016·Application pending·0 cites
- 2134US2003070610A1Method and device for producing group III-N, group III-V-N and metal-nitrogen component structures on Si substratesFiled 2002·Application pending·0 cites
- 2233US2013256697A1Group-iii-nitride based layer structure and semiconductor deviceDADGAR ARMIN·Filed 2011·Application pending·0 cites
- 2332US2008067549A1Semiconductor componentDADGAR ARMIN·Filed 2007·Application pending·0 cites
- 2432US2014001513A1Layer system of a silicon-based support and a heterostructure applied directly onto the supportDADGAR ARMIN·Filed 2011·Application pending·0 cites
- 2531US2012217617A1Semi-Polar Wurtzite Group III Nitride Based Semiconductor Layers and Semiconductor Components Based ThereonDADGAR ARMIN·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →