Inventor · disambiguated record
Arnab Sen Gupta
Also filed as: SEN GUPTA ARNAB
19 granted patents·33 pending applications·24 citations·filing 2018–2024
90Inventor score
Files withINTEL CORP52
Top patents by PatentIndex Score
52 records- 0196US11843058B2Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structuresINTEL CORP·Filed 2021·Granted Dec 12, 2023·3 cites·18 claims
- 0295US11171243B2Transistor structures with a metal oxide contact bufferINTEL CORP·Filed 2019·Granted Nov 9, 2021·11 cites·14 claims
- 0388US11417770B2Vertical thin-film transistors between metal layersINTEL CORP·Filed 2018·Granted Aug 16, 2022·5 cites·25 claims
- 0485US12495559B2Capacitor with dual dielectric layersINTEL CORP·Filed 2021·Granted Dec 9, 2025·1 cites·14 claims
- 0581US12349416B2Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structuresINTEL CORP·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 0681US11955560B2Passivation layers for thin film transistors and methods of fabricationINTEL CORP·Filed 2020·Granted Apr 9, 2024·1 cites·20 claims
- 0780US12119387B2Low resistance approaches for fabricating contacts and the resulting structuresINTEL CORP·Filed 2020·Granted Oct 15, 2024·1 cites·10 claims
- 0879US12376342B2Passivation layers for thin film transistorsINTEL CORP·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 0972US11522060B2Epitaxial layers on contact electrodes for thin- film transistorsINTEL CORP·Filed 2018·Granted Dec 6, 2022·1 cites·24 claims
- 1068US11444205B2Contact stacks to reduce hydrogen in thin film transistorINTEL CORP·Filed 2018·Granted Sep 13, 2022·1 cites·23 claims
- 1160US12375060B2Digitally controlled lithographically-defined multi-frequency acoustic resonatorsINTEL CORP·Filed 2021·Granted Jul 29, 2025·0 cites·20 claims
- 1259US2025212441A1Incorporation of semiconductor doping materials in metal contacts via reactive sputteringINTEL CORP·Filed 2023·Application pending·0 cites
- 1359US2025393290A1Ferroelectric field effect transistors (fefets) with relaxor ferroelectric materialsINTEL CORP·Filed 2024·Application pending·0 cites
- 1458US12058847B2Monolithic memory stackINTEL CORP·Filed 2020·Granted Aug 6, 2024·0 cites·20 claims
- 1557US2025212507A1Cmos metal contacts with dopant diffusion barriersINTEL CORP·Filed 2023·Application pending·0 cites
- 1657US2025140543A1Low Temperature Deposition of Hydrogen-Free Diamond-Like Carbon FilmsINTEL CORP·Filed 2023·Application pending·0 cites
- 1757US2025220958A1Source/drain contact trench with dielectric liner on contact metalINTEL CORP·Filed 2023·Application pending·0 cites
- 1856US12328946B2ESD protection decoupled from diffusionINTEL CORP·Filed 2020·Granted Jun 10, 2025·0 cites·17 claims
- 1956US12224309B2Capacitors with built-in electric fieldsINTEL CORP·Filed 2020·Granted Feb 11, 2025·0 cites·17 claims
- 2056US2025380487A1Ferroelectric field effect transistors (fefets) with improper ferroelectric materialsINTEL CORP·Filed 2024·Application pending·0 cites
- 2156US2023411443A1Metal insulator metal (mim) capacitor architecturesINTEL CORP·Filed 2023·Application pending·0 cites
- 2256US2025008852A1Two-terminal ferroelectric perovskite diode memory elementINTEL CORP·Filed 2023·Application pending·0 cites
- 2355US12437929B2Capacitor with an electrically conductive layer coupled with a metal layer of the capacitorINTEL CORP·Filed 2021·Granted Oct 7, 2025·0 cites·24 claims
- 2455US2024429301A1Perovskite-based field effect transistor (fet) devices enabled by epitaxial lateral overgrowthINTEL CORP·Filed 2023·Application pending·0 cites
- 2554US2025006791A1Perovskite oxide field effect transistor with highly doped source and drainINTEL CORP·Filed 2023·Application pending·0 cites
- 2654US2023411278A1Metal insulator metal (mim) capacitor architecturesINTEL CORP·Filed 2023·Application pending·0 cites
- 2753US2023420511A1Stacked single crystal transition-metal dichalcogenide using seeded growthINTEL CORP·Filed 2022·Application pending·0 cites
- 2853US2025006840A1Negative capacitance field effect transistor (ncfet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 2953US2025006839A1P-type perovskite ferroelectric field effect transistor (fefet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 3053US2025006841A1Technologies for barrier layers in perovskite transistorsINTEL CORP·Filed 2023·Application pending·0 cites
- 3152US12328927B2Low resistance and reduced reactivity approaches for fabricating contacts and the resulting structuresINTEL CORP·Filed 2020·Granted Jun 10, 2025·0 cites·20 claims
- 3252US2024006506A1Low-resistance and thermally stable contacts with phosphide or arsenide metal compound layersINTEL CORP·Filed 2022·Application pending·0 cites
- 3352US2024113212A1Technologies for perovskite transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 3451US12432948B2Compositional engineering of Schottky diodeINTEL CORP·Filed 2020·Granted Sep 30, 2025·0 cites·8 claims
- 3551US11777029B2Vertical transistors for ultra-dense logic and memory applicationsINTEL CORP·Filed 2019·Granted Oct 3, 2023·0 cites·20 claims
- 3651US11637185B2Contact stacks to reduce hydrogen in semiconductor devicesINTEL CORP·Filed 2018·Granted Apr 25, 2023·0 cites·20 claims
- 3751US2023200081A1Transistor devices with perovskite filmsINTEL CORP·Filed 2021·Application pending·0 cites
- 3851US2024006488A1Capping source and drain regions of transistors to prevent diffusion of dopants during fabricationINTEL CORP·Filed 2022·Application pending·0 cites
- 3951US2024120415A1Technologies for atomic layer deposition for ferroelectric transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 4051US2024113220A1Technologies for transistors with a thin-film ferroelectricINTEL CORP·Filed 2022·Application pending·0 cites
- 4150US2024006494A1Source and drain refractory metal capINTEL CORP·Filed 2022·Application pending·0 cites
- 4250US2024006533A1Low-resistance and thermally stable contacts with boride, indium, or gallium metal compound layersINTEL CORP·Filed 2022·Application pending·0 cites
- 4350US2024105810A1Vertical ferrorelectric field-effect transistor (fefet) devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 4450US2024097031A1Ferrorelectric field-effect transistor (fefet) devices with low operating voltage capabilitiesINTEL CORP·Filed 2022·Application pending·0 cites
- 4548US2022199801A1Novel method to form single crystal mosfet and fefetINTEL CORP·Filed 2020·Application pending·0 cites
- 4648US2023102177A1Multilayer capacitor with edge insulatorINTEL CORP·Filed 2021·Application pending·0 cites
- 4748US2022199519A1Metal insulator metal (mim) capacitor with perovskite dielectricINTEL CORP·Filed 2020·Application pending·0 cites
- 4848US2023187553A1Metal carbon barrier region for nmos device contactsINTEL CORP·Filed 2021·Application pending·0 cites
- 4947US2023253444A1Capacitor devices with strontium titanate insulator layersINTEL CORP·Filed 2022·Application pending·0 cites
- 5046US2022190121A1Transistor channel materialsINTEL CORP·Filed 2020·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →