Inventor · disambiguated record
Ashish Agrawal
Also filed as: AGRAWAL ASHISH
48 granted patents·21 pending applications·25 citations·filing 2015–2024
96Inventor score
Top patents by PatentIndex Score
69 records- 0193US11830788B2Integrated circuits and methods for forming integrated circuitsINTEL CORP·Filed 2021·Granted Nov 28, 2023·2 cites·6 claims
- 0290US10847656B2Fabrication of non-planar IGZO devices for improved electrostaticsINTEL CORP·Filed 2015·Granted Nov 24, 2020·6 cites·18 claims
- 0382US12388011B2Top gate recessed channel CMOS thin film transistor and methods of fabricationINTEL CORP·Filed 2023·Granted Aug 12, 2025·0 cites·18 claims
- 0482US12255234B2Integrated circuit structures having germanium-based channelsINTEL CORP·Filed 2024·Granted Mar 18, 2025·0 cites·11 claims
- 0582US11328988B2Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabricationINTEL CORP·Filed 2019·Granted May 10, 2022·2 cites·17 claims
- 0681US11244943B2Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel materialINTEL CORP·Filed 2019·Granted Feb 8, 2022·2 cites·21 claims
- 0780US11335793B2Vertical tunneling field-effect transistorsINTEL CORP·Filed 2018·Granted May 17, 2022·2 cites·19 claims
- 0880US10249742B2Offstate parasitic leakage reduction for tunneling field effect transistorsINTEL CORP·Filed 2015·Granted Apr 2, 2019·3 cites·22 claims
- 0978US11164785B2Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain materialINTEL CORP·Filed 2019·Granted Nov 2, 2021·2 cites·15 claims
- 1076US2025031362A1Arrays of double-sided dram cells including capacitors on the frontside and backside of a stacked transistor structureINTEL CORP·Filed 2024·Application pending·0 cites
- 1176US2025107174A1Neighboring gate-all-around integrated circuit structures having conductive contact stressor between epitaxial source or drain regionsINTEL CORP·Filed 2024·Application pending·0 cites
- 1275US11923421B2Integrated circuit structures having germanium-based channelsINTEL CORP·Filed 2022·Granted Mar 5, 2024·0 cites·3 claims
- 1375US10403733B2Dielectric metal oxide cap for channel containing germaniumINTEL CORP·Filed 2015·Granted Sep 3, 2019·2 cites·20 claims
- 1474US11929320B2Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabricationINTEL CORP·Filed 2022·Granted Mar 12, 2024·0 cites·19 claims
- 1574US11276644B2Integrated circuits and methods for forming thin film crystal layersINTEL CORP·Filed 2018·Granted Mar 15, 2022·1 cites·9 claims
- 1674US2022328663A1Tunneling field effect transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 1772US12211794B2Integrated circuits and methods for forming thin film crystal layersINTEL CORP·Filed 2022·Granted Jan 28, 2025·0 cites·9 claims
- 1872US11887988B2Thin film transistor structures with regrown source and drainINTEL CORP·Filed 2019·Granted Jan 30, 2024·1 cites·17 claims
- 1972US2024258427A1Source or drain structures for germanium n-channel devicesINTEL CORP·Filed 2024·Application pending·0 cites
- 2071US11862715B2Vertical tunneling field-effect transistorsINTEL CORP·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 2171US11721766B2Metal-assisted single crystal transistorsINTEL CORP·Filed 2022·Granted Aug 8, 2023·0 cites·18 claims
- 2269US11996404B2Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel materialINTEL CORP·Filed 2021·Granted May 28, 2024·0 cites·18 claims
- 2367US11626519B2Fabrication of non-planar IGZO devices for improved electrostaticsINTEL CORP·Filed 2020·Granted Apr 11, 2023·0 cites·11 claims
- 2467US10593785B2Transistors having ultra thin fin profiles and their methods of fabricationINTEL CORP·Filed 2015·Granted Mar 17, 2020·1 cites·25 claims
- 2565US12199142B2Neighboring gate-all-around integrated circuit structures having conductive contact stressor between epitaxial source or drain regionsINTEL CORP·Filed 2020·Granted Jan 14, 2025·0 cites·20 claims
- 2665US10998270B2Local interconnect for group IV source/drain regionsINTEL CORP·Filed 2016·Granted May 4, 2021·1 cites·20 claims
- 2764US2022109072A1Reducing band-to-band tunneling in semiconductor devicesINTEL CORP·Filed 2021·Application pending·0 cites
- 2863US12120865B2Arrays of double-sided dram cells including capacitors on the frontside and backside of a stacked transistor structureINTEL CORP·Filed 2020·Granted Oct 15, 2024·0 cites·20 claims
- 2960US11437472B2Integrated circuit structures having germanium-based channelsINTEL CORP·Filed 2018·Granted Sep 6, 2022·0 cites·20 claims
- 3059US11164809B2Integrated circuits and methods for forming integrated circuitsINTEL CORP·Filed 2018·Granted Nov 2, 2021·0 cites·14 claims
- 3156US11404562B2Tunneling field effect transistorsINTEL CORP·Filed 2017·Granted Aug 2, 2022·0 cites·20 claims
- 3256US11322620B2Metal-assisted single crystal transistorsINTEL CORP·Filed 2017·Granted May 3, 2022·0 cites·19 claims
- 3356US2022199773A1Condensed source or drain structures with high germanium contentINTEL CORP·Filed 2020·Application pending·0 cites
- 3455US11973143B2Source or drain structures for germanium N-channel devicesINTEL CORP·Filed 2019·Granted Apr 30, 2024·0 cites·15 claims
- 3555US11233148B2Reducing band-to-band tunneling in semiconductor devicesINTEL CORP·Filed 2017·Granted Jan 25, 2022·0 cites·25 claims
- 3654US12414339B2Formation of gate spacers for strained PMOS gate-all-around transistor structuresINTEL CORP·Filed 2021·Granted Sep 9, 2025·0 cites·20 claims
- 3753US12266570B2Self-aligned interconnect structures and methods of fabricationINTEL CORP·Filed 2020·Granted Apr 1, 2025·0 cites·20 claims
- 3852US2023197800A1Non-reactive epi contact for stacked transistorsINTEL CORP·Filed 2021·Application pending·0 cites
- 3951US2023145229A1Layer transfer process to form backside contacts in semiconductor devicesINTEL CORP·Filed 2021·Application pending·0 cites
- 4050US11482622B2Adhesion structure for thin film transistorINTEL CORP·Filed 2018·Granted Oct 25, 2022·0 cites·22 claims
- 4150US11462568B2Stacked thin film transistorsINTEL CORP·Filed 2018·Granted Oct 4, 2022·0 cites·20 claims
- 4250US2023132749A1Stepwise internal spacers for stacked transistor structuresINTEL CORP·Filed 2021·Application pending·0 cites
- 4350US2023197777A1Source or drain metallization prior to contact formation in stacked transistorsINTEL CORP·Filed 2021·Application pending·0 cites
- 4450US2022375916A1Three-dimensional monolithically integrated nanoribbon-based memory and computeINTEL CORP·Filed 2021·Application pending·0 cites
- 4549US11450739B2Germanium-rich nanowire transistor with relaxed buffer layerINTEL CORP·Filed 2018·Granted Sep 20, 2022·0 cites·20 claims
- 4649US10644112B2Systems, methods and devices for isolation for subfin leakageINTEL CORP·Filed 2016·Granted May 5, 2020·0 cites·19 claims
- 4749US2023420507A1Gate all around transistors on alternate substrate orientationINTEL CORP·Filed 2022·Application pending·0 cites
- 4848US10644111B2Strained silicon layer with relaxed underlayerINTEL CORP·Filed 2016·Granted May 5, 2020·0 cites·22 claims
- 4947US11195924B2Broken bandgap contactINTEL CORP·Filed 2016·Granted Dec 7, 2021·0 cites·10 claims
- 5047US2022199402A1Source & drain dopant diffusion barriers for n-type germanium transistorsINTEL CORP·Filed 2020·Application pending·0 cites
Showing the top 50 of 69 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Ashish Agrawal files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →