Inventor · disambiguated record
Ashutosh Ashutosh
10 granted patents·1 pending application·118 citations·filing 2002–2014
89Inventor score
Files withASHUTOSH ASHUTOSH2GOLONZKA OLEG2HEWLETT PACKARD DEVELOPMENT CO2ACTIFIO INC1CHANG DAVID FU-TIEN1
Top patents by PatentIndex Score
11 records- 0195US9372758B2System and method for performing a plurality of prescribed data management functions in a manner that reduces redundant access operations to primary storageACTIFIO INC·Filed 2014·Granted Jun 21, 2016·34 cites·16 claims
- 0292US9858155B2System and method for managing data with service level agreements that may specify non-uniform copying of dataASHUTOSH ASHUTOSH·Filed 2010·Granted Jan 2, 2018·31 cites·20 claims
- 0390US8904126B2System and method for performing a plurality of prescribed data management functions in a manner that reduces redundant access operations to primary storageASHUTOSH ASHUTOSH·Filed 2010·Granted Dec 2, 2014·19 cites·10 claims
- 0486US8193049B2Methods of channel stress engineering and structures formed therebyGOLONZKA OLEG·Filed 2008·Granted Jun 5, 2012·14 cites·13 claims
- 0579US7058545B2Software application domain and storage domain characterization process and methodHEWLETT PACKARD DEVELOPMENT CO·Filed 2002·Granted Jun 6, 2006·14 cites·30 claims
- 0670US7127498B2Software application domain and storage domain constraining process and methodHEWLETT PACKARD DEVELOPMENT CO·Filed 2002·Granted Oct 24, 2006·3 cites·24 claims
- 0766US8394694B2Reliability of high-K gate dielectric layersLAVOIE ADRIEN R·Filed 2007·Granted Mar 12, 2013·3 cites·12 claims
- 0854US8060436B2Software application domain and storage domain risk analysis process and methodCHANG DAVID FU-TIEN·Filed 2002·Granted Nov 15, 2011·0 cites·14 claims
- 0953US7842983B2Boundaries with elevated deuterium levelsINTEL CORP·Filed 2008·Granted Nov 30, 2010·0 cites·7 claims
- 1049US8716806B2Methods of channel stress engineering and structures formed therebyGOLONZKA OLEG·Filed 2012·Granted May 6, 2014·0 cites·27 claims
- 1149US2011147804A1Drive current enhancement in tri-gate MOSFETS by introduction of compressive metal gate stress using ion implantationMEHANDRU RISHABH·Filed 2009·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →