Inventor · disambiguated record
Ashish Verma Penumatcha
Also filed as: PENUMATCHA ASHISH · PENUMATCHA ASHISH V · PENUMATCHA ASHISH VERMA
38 granted patents·46 pending applications·12 citations·filing 2018–2024
94Inventor score
Top patents by PatentIndex Score
84 records- 0187US11316027B2Relaxor ferroelectric capacitors and methods of fabricationINTEL CORP·Filed 2020·Granted Apr 26, 2022·2 cites·20 claims
- 0284US12396254B2Stacked 2D CMOS with inter metal layersINTEL CORP·Filed 2021·Granted Aug 19, 2025·1 cites·19 claims
- 0383US11171145B2Memory devices based on capacitors with built-in electric fieldINTEL CORP·Filed 2018·Granted Nov 9, 2021·3 cites·25 claims
- 0481US12396217B2Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabricationINTEL CORP·Filed 2020·Granted Aug 19, 2025·1 cites·13 claims
- 0580US12278289B2TMD inverted nanowire integrationINTEL CORP·Filed 2024·Granted Apr 15, 2025·0 cites·20 claims
- 0679US11605624B2Ferroelectric resonatorINTEL CORP·Filed 2019·Granted Mar 14, 2023·2 cites·25 claims
- 0778US11646374B2Ferroelectric transistors to store multiple states of resistances for memory cellsINTEL CORP·Filed 2018·Granted May 9, 2023·2 cites·25 claims
- 0874US12113117B2Piezo-resistive transistor based resonator with ferroelectric gate dielectricINTEL CORP·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 0974US2025006434A1Ferroelectric capacitor with insulating thin filmINTEL CORP·Filed 2024·Application pending·0 cites
- 1070US12125893B2Piezo-resistive transistor based resonator with anti-ferroelectric gate dielectricINTEL CORP·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 1166US11935956B2TMD inverted nanowire integrationINTEL CORP·Filed 2020·Granted Mar 19, 2024·0 cites·20 claims
- 1260US12406713B2Probabilistic computing devices based on stochastic switching in a ferroelectric field-effect transistorINTEL CORP·Filed 2021·Granted Sep 2, 2025·0 cites·24 claims
- 1360US12369382B2Integrated circuit structures with graphene contactsINTEL CORP·Filed 2021·Granted Jul 22, 2025·0 cites·25 claims
- 1460US11532439B2Ultra-dense ferroelectric memory with self-aligned patterningINTEL CORP·Filed 2019·Granted Dec 20, 2022·1 cites·20 claims
- 1557US12324204B2Transistors including two-dimensional materialsINTEL CORP·Filed 2020·Granted Jun 3, 2025·0 cites·20 claims
- 1657US11646356B2Piezo-resistive transistor based resonator with anti-ferroelectric gate dielectricINTEL CORP·Filed 2019·Granted May 9, 2023·0 cites·20 claims
- 1757US11637191B2Piezo-resistive transistor based resonator with ferroelectric gate dielectricINTEL CORP·Filed 2019·Granted Apr 25, 2023·0 cites·25 claims
- 1856US12432976B2Thin film transistors having strain-inducing structures integrated with 2D channel materialsINTEL CORP·Filed 2021·Granted Sep 30, 2025·0 cites·10 claims
- 1956US12349442B2Thin film transistors having semiconductor structures integrated with 2D channel materialsINTEL CORP·Filed 2021·Granted Jul 1, 2025·0 cites·20 claims
- 2056US12266720B2Transistors with monocrystalline metal chalcogenide channel materialsINTEL CORP·Filed 2020·Granted Apr 1, 2025·0 cites·12 claims
- 2156US12224309B2Capacitors with built-in electric fieldsINTEL CORP·Filed 2020·Granted Feb 11, 2025·0 cites·17 claims
- 2256US2025112122A1Backside power gatingINTEL CORP·Filed 2023·Application pending·0 cites
- 2356US2025107147A1Architectures and methods to modulate contact resistance in 2d materials for use in field effect transistor devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 2455US12176388B2Transition metal dichalcogenide nanowires and methods of fabricationINTEL CORP·Filed 2020·Granted Dec 24, 2024·0 cites·20 claims
- 2555US2025113540A1Transistor comprising a composite gate dielectric structure and method to provide sameINTEL CORP·Filed 2023·Application pending·0 cites
- 2654US12349438B2Contact gating for 2D field effect transistorsINTEL CORP·Filed 2021·Granted Jul 1, 2025·0 cites·21 claims
- 2754US11908950B2Charge-transfer spacers for stacked nanoribbon 2D transistorsINTEL CORP·Filed 2020·Granted Feb 20, 2024·0 cites·24 claims
- 2854US11653502B2FeFET with embedded conductive sidewall spacers and process for forming the sameINTEL CORP·Filed 2019·Granted May 16, 2023·0 cites·25 claims
- 2954US2025113599A1Methods for doping 2d transistor devices and resulting architecturesINTEL CORP·Filed 2023·Application pending·0 cites
- 3053US12266712B2Transition metal dichalcogenide nanosheet transistors and methods of fabricationINTEL CORP·Filed 2020·Granted Apr 1, 2025·0 cites·19 claims
- 3153US2023420511A1Stacked single crystal transition-metal dichalcogenide using seeded growthINTEL CORP·Filed 2022·Application pending·0 cites
- 3253US2020286686A1Ferroelectric capacitor with insulating thin filmINTEL CORP·Filed 2019·Application pending·0 cites
- 3352US2023420510A1Self-assembled monolayer on a dielectric for transition metal dichalcogenide growth for stacked 2d channelsINTEL CORP·Filed 2022·Application pending·0 cites
- 3452US2024222461A1Beol contact metals for 2d transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 3552US2024222483A12d nanoribbons utilizing silicon scaffoldingINTEL CORP·Filed 2022·Application pending·0 cites
- 3651US11695051B2Gate stacks for FinFET transistorsINTEL CORP·Filed 2019·Granted Jul 4, 2023·0 cites·18 claims
- 3751US2024222484A1Transistor with channel material in a stack with insulator material supportsINTEL CORP·Filed 2022·Application pending·0 cites
- 3851US2024222482A1Transistor structures having a doping layer on transition metal dichalcogenide layers outside of the channel regionINTEL CORP·Filed 2022·Application pending·0 cites
- 3951US2023197836A1Integrated circuits with max or mx conductive materialsINTEL CORP·Filed 2021·Application pending·0 cites
- 4051US2024006521A1Back-end-of-line 2d transistorINTEL CORP·Filed 2022·Application pending·0 cites
- 4151US2024222113A1Passivation of crystalline substrate for metal chalcogen material synthesisINTEL CORP·Filed 2022·Application pending·0 cites
- 4251US2023197860A1Metal chalcogenide transistors with defected channel transition layerINTEL CORP·Filed 2021·Application pending·0 cites
- 4351US2023352584A1Technologies for transistors with a ferroelectric gate dielectricNIKONOV DMITRI EVGENIEVICH·Filed 2022·Application pending·0 cites
- 4451US2023200079A1Ferroelectric oxide- and ferroelectric monochalcogenide-based capacitorsINTEL CORP·Filed 2021·Application pending·0 cites
- 4551US2024006484A1Contact architecture for 2d stacked nanoribbon transistorINTEL CORP·Filed 2022·Application pending·0 cites
- 4650US12484457B2Differentially programmable magnetic tunnel junction device and system including sameINTEL CORP·Filed 2021·Granted Nov 25, 2025·0 cites·23 claims
- 4750US11769789B2MFM capacitor with multilayered oxides and metals and processes for forming suchINTEL CORP·Filed 2019·Granted Sep 26, 2023·0 cites·24 claims
- 4850US11640984B2Transistor device with (anti)ferroelectric spacer structuresINTEL CORP·Filed 2019·Granted May 2, 2023·0 cites·17 claims
- 4950US2024222428A1Seeded growth for 2d nanoribbon transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 5050US2023099814A1Heterostructure material contacts for 2d transistorsINTEL CORP·Filed 2021·Application pending·0 cites
Showing the top 50 of 84 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →