Inventor · disambiguated record
Ashish Tandon
Also filed as: TANDON ASHISH
18 granted patents·12 pending applications·181 citations·filing 2002–2024
94Inventor score
Files withAGILENT TECHNOLOGIES INC7LUMILEDS LLC5AVAGO TECH FIBER IP SG PTE LTD3STION CORP3TANDON ASHISH3
Top patents by PatentIndex Score
30 records- 0192US11961875B2Monolithic segmented LED array architecture with islanded epitaxial growthLUMILEDS LLC·Filed 2023·Granted Apr 16, 2024·2 cites·10 claims
- 0292US6765238B2Material systems for semiconductor tunnel-junction structuresAGILENT TECHNOLOGIES INC·Filed 2002·Granted Jul 20, 2004·48 cites·33 claims
- 0388US6756325B2Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active regionAGILENT TECHNOLOGIES INC·Filed 2002·Granted Jun 29, 2004·37 cites·12 claims
- 0484US6711195B2Long-wavelength photonic device with GaAsSb quantum-well layerAGILENT TECHNOLOGIES INC·Filed 2002·Granted Mar 23, 2004·22 cites·19 claims
- 0583US8398772B1Method and structure for processing thin film PV cells with improved temperature uniformityTANDON ASHISH·Filed 2010·Granted Mar 19, 2013·5 cites·16 claims
- 0678US7443561B2Deep quantum well electro-absorption modulatorAVAGO TECH FIBER IP SG PTE LTD·Filed 2005·Granted Oct 28, 2008·5 cites·20 claims
- 0776US6730944B1InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xPAGILENT TECHNOLOGIES INC·Filed 2003·Granted May 4, 2004·13 cites·13 claims
- 0875US7016392B2GaAs-based long-wavelength laser incorporating tunnel junction structureTANDON ASHISH·Filed 2003·Granted Mar 21, 2006·14 cites·14 claims
- 0973US7034331B2Material systems for semiconductor tunnel-junction structuresAGILENT TECHNOLOGIES INC·Filed 2004·Granted Apr 25, 2006·9 cites·35 claims
- 1066US7142342B2Electroabsorption modulatorAVAGO TECH FIBER IP SG PTE LTD·Filed 2003·Granted Nov 28, 2006·10 cites·21 claims
- 1165US8461061B2Quartz boat method and apparatus for thin film thermal treatmentALEXANDER PAUL·Filed 2011·Granted Jun 11, 2013·2 cites·15 claims
- 1265US2025045507A1Evaluation of electronic documents for adverse subject matterNOKIA SOLUTIONS & NETWORKS OY·Filed 2024·Application pending·0 cites
- 1361US7577172B2Active region of a light emitting device optimized for increased modulation speed operationAGILENT TECHNOLOGIES INC·Filed 2005·Granted Aug 18, 2009·1 cites·17 claims
- 1460US7269196B2Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereofAVAGO TECH FIBER IP SG PTE LTD·Filed 2004·Granted Sep 11, 2007·5 cites·15 claims
- 1559US11749790B2Segmented LED with embedded transistorsLUMILEDS LLC·Filed 2018·Granted Sep 5, 2023·0 cites·17 claims
- 1658US2019198564A1Monolithic segmented led array architecture with islanded epitaxial growthLUMILEDS LLC·Filed 2018·Application pending·0 cites
- 1757US6876686B2Method of fabricating active layers in a laser utilizing InP-based active regionsAGILENT TECHNOLOGIES INC·Filed 2003·Granted Apr 5, 2005·4 cites·11 claims
- 1856US2013174900A1Nanowire enhanced transparent conductive oxide for thin film photovoltaic devicesFARRIS III CHESTER A·Filed 2012·Application pending·0 cites
- 1953US7033938B2Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active regionBOUR DAVID P·Filed 2004·Granted Apr 25, 2006·3 cites·22 claims
- 2046US7358523B2Method and structure for deep well structures for long wavelength active regionsAVAGO TECHNOLOGIES FIBER IP PT·Filed 2004·Granted Apr 15, 2008·1 cites·12 claims
- 2146US2014147800A1Quartz boat method and apparatus for thin film thermal treatmentSTION CORP·Filed 2013·Application pending·0 cites
- 2245US2011220198A1Method and Device Utilizing Strained AZO Layer and Interfacial Fermi Level Pinning in Bifacial Thin Film PV CellsSTION CORP·Filed 2011·Application pending·0 cites
- 2343US10957820B2Monolithic, segmented light emitting diode arrayLUMILEDS LLC·Filed 2018·Granted Mar 23, 2021·0 cites·20 claims
- 2442US2019189682A1Monolithic segmented led array architecture with transparent common n-contactLUMILEDS LLC·Filed 2018·Application pending·0 cites
- 2540US2007289853A1Tailoring of switch bubble formation for LIMMS devicesBEERLING TIMOTHY·Filed 2006·Application pending·0 cites
- 2638US2005184303A1Strain compensating structure to reduce oxide-induced defects in semiconductor devicesFiled 2004·Application pending·0 cites
- 2738US2011259395A1Single Junction CIGS/CIS Solar ModuleSTION CORP·Filed 2011·Application pending·0 cites
- 2838US2004001521A1Laser having active region formed above substrateFiled 2002·Application pending·0 cites
- 2937US2021255211A1Method and apparatus for sensor orientation determinationNOKIA TECHNOLOGIES OY·Filed 2018·Application pending·0 cites
- 3037US2012264072A1Method and apparatus for performing reactive thermal treatment of thin film pv materialTANDON ASHISH·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →