Inventor · disambiguated record
Atsushi Ikari
Also filed as: IKARI ATSUSHI
20 granted patents·1 pending application·722 citations·filing 1996–2021
94Inventor score
Files withTHINKON NEW TECH JAPAN CORPORATION7SILTRONIC AG5JAPAN RES DEV CORP3NIPPON STEEL CORP3NAKAI KATSUHIKO2
Top patents by PatentIndex Score
21 records- 0198US7204887B2Wafer holding, wafer support member, wafer boat and heat treatment furnaceNIPPON STEEL CORP·Filed 2001·Granted Apr 17, 2007·581 cites·11 claims
- 0279US6548886B1Silicon semiconductor wafer and method for producing the sameWACKER NSCE CORP·Filed 1999·Granted Apr 15, 2003·70 cites·26 claims
- 0378US11348764B2Electrode ringTHINKON NEW TECH JAPAN CORPORATION·Filed 2018·Granted May 31, 2022·2 cites·12 claims
- 0474US7470323B2Process for producing p-doped and epitaxially coated semiconductor wafers from siliconSILTRONIC AG·Filed 2007·Granted Dec 30, 2008·4 cites·20 claims
- 0569US11551915B2Method of manufacturing ring-shaped member and ring-shaped memberTHINKON NEW TECH JAPAN CORPORATION·Filed 2021·Granted Jan 10, 2023·0 cites·3 claims
- 0666US8043929B2Semiconductor substrate and method for production thereofSILTRONIC AG·Filed 2008·Granted Oct 25, 2011·2 cites·20 claims
- 0763US7208043B2Silicon semiconductor substrate and preparation thereofSILTRONIC AG·Filed 2002·Granted Apr 24, 2007·9 cites·6 claims
- 0856US8524001B2Silicon wafer and method for producing the sameNAKAI KATSUHIKO·Filed 2009·Granted Sep 3, 2013·0 cites·3 claims
- 0955US10984988B2Method of manufacturing ring-shaped member and ring-shaped memberTHINKON NEW TECH JAPAN CORPORATION·Filed 2018·Granted Apr 20, 2021·0 cites·3 claims
- 1054US6805742B2Silicon semiconductor substrate and process for producing the sameSILTRONIC AG·Filed 2002·Granted Oct 19, 2004·6 cites·9 claims
- 1151US8241421B2Epitaxial wafer and production method thereofNAKAI KATSUHIKO·Filed 2010·Granted Aug 14, 2012·0 cites·9 claims
- 1250US10580621B2Electrode PlateTHINKON NEW TECH JAPAN CORPORATION·Filed 2017·Granted Mar 3, 2020·0 cites·9 claims
- 1350US10553405B2Ring-shaped electrodeTHINKON NEW TECH JAPAN CORPORATION·Filed 2017·Granted Feb 4, 2020·0 cites·5 claims
- 1448US6617034B1SOI substrate and method for production thereofNIPPON STEEL CORP·Filed 1999·Granted Sep 9, 2003·16 cites·4 claims
- 1547US6080237AMethod for production of dislocation-free silicon single crystalNIPPON STEEL CORP·Filed 1998·Granted Jun 27, 2000·11 cites·13 claims
- 1646US5700320AGrowth of silicon single crystal having uniform impurity distribution along lengthwise or radial directionJAPAN RES DEV CORP·Filed 1996·Granted Dec 23, 1997·8 cites·4 claims
- 1745US11545345B2Protective material ringTHINKON NEW TECH JAPAN CORPORATION·Filed 2018·Granted Jan 3, 2023·0 cites·10 claims
- 1844US5704974AGrowth of silicon crystal from melt having extraordinary eddy flows on its surfaceJAPAN RES DEV CORP·Filed 1996·Granted Jan 6, 1998·7 cites·4 claims
- 1942US11380525B2Ring for electrodeTHINKON NEW TECH JAPAN CORPORATION·Filed 2017·Granted Jul 5, 2022·0 cites·12 claims
- 2041US2005139961A1Semiconductor substrate and method for production thereofSILTRONIC AG·Filed 2004·Application pending·0 cites
- 2136US5683504AGrowth of silicon single crystalJAPAN RES DEV CORP·Filed 1996·Granted Nov 4, 1997·6 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →