Inventor · disambiguated record
Atul Katoch
Also filed as: KATOCH ATUL
97 granted patents·26 pending applications·213 citations·filing 2003–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD90KATOCH ATUL14TAIWAN SEMICONDUCTOR MFG11NXP BV4KONINKL PHILIPS ELECTRONICS NV3
Top patents by PatentIndex Score
123 records- 0197US11763863B2Systems and methods for controlling power management operations in a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 19, 2023·4 cites·20 claims
- 0297US11309000B2Systems and methods for controlling power management operations in a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 19, 2022·5 cites·20 claims
- 0396US8929160B2Tracking circuitKATOCH ATUL·Filed 2013·Granted Jan 6, 2015·66 cites·20 claims
- 0495US12165739B2Systems and methods for controlling power management operations in a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·2 cites·20 claims
- 0594US11854587B2Low power wake up for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0693US11626158B2Bit line pre-charge circuit for power management modes in multi bank SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·3 cites·20 claims
- 0792US11935589B2Bit line pre-charge circuit for power management modes in multi bank SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 19, 2024·2 cites·20 claims
- 0892US11361818B2Memory device with global and local latchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·3 cites·20 claims
- 0992US9324415B2Clamping circuit for multiple-port memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 26, 2016·14 cites·20 claims
- 1091US11929113B2Variable voltage bit line prechargeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·1 cites·20 claims
- 1191US11929110B2Memory circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·2 cites·20 claims
- 1290US11521673B2Variable voltage bit line prechargeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 6, 2022·2 cites·20 claims
- 1389US2025348394A1Scan synchronous-write-through testing architectures for a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1488US11734142B2Scan synchronous-write-through testing architectures for a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·1 cites·20 claims
- 1587US11031063B2Word-line driver and method of operating a word-line driverTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·2 cites·18 claims
- 1686US12217792B2Memory circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·1 cites·20 claims
- 1785US10923182B2Fixed-level charge sharing type LCV for memory compilerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·4 cites·20 claims
- 1885US10699766B2Word-line driver and method of operating a word-line driverTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 30, 2020·4 cites·20 claims
- 1985US2025349345A1Memory circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2084US10783938B2SRAM with local bit line, input/output circuit, and global bit lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 22, 2020·5 cites·20 claims
- 2184US2025292814A1Far End Driver for Memory ClockTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2283US9270262B2Power management during wakeupTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 23, 2016·6 cites·20 claims
- 2383US2025285662A1Low power wake up for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2483US2025364024A1Method, device, and circuit for high-speed memoriesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2582US10475502B2Word-line driver and method of operating a word-line driverTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·4 cites·20 claims
- 2682US2025259675A1Bit Line Pre-Charge Circuit for Power Management Modes in Multi Bank SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2781US11256588B2Scan synchronous-write-through testing architectures for a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·1 cites·20 claims
- 2881US9704599B1Memory circuit with assist circuit trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 11, 2017·4 cites·20 claims
- 2981US2025061929A1Systems and Methods for Controlling Power Management Operations in a Memory DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3080US12374386B2Variable voltage bit line prechargeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 3180US12361991B2Far end driver for memory clockTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 3280US9355697B2Wordline driverTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 31, 2016·6 cites·20 claims
- 3380US2025356889A1Global Boosting CircuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3479US12327586B2Bit line pre-charge circuit for power management modes in multi bank SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 10, 2025·0 cites·20 claims
- 3579US9881655B2Memory circuit having data lines selectively coupled to a sense amplifier and method for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 30, 2018·4 cites·20 claims
- 3679US8959468B2Fault injection of finFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 17, 2015·4 cites·20 claims
- 3779US2025321611A1Technique to Mitigate Clock Generation Failure at High Input Clock SkewTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3878US12340869B2Low power wake up for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 24, 2025·0 cites·20 claims
- 3978US12243602B2Method, device, and circuit for high-speed memoriesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 4, 2025·0 cites·20 claims
- 4078US11295791B2SRAM with local bit line, input/output circuit, and global bit lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·1 cites·20 claims
- 4178US9311968B2Read tracking mechanismTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 12, 2016·6 cites·20 claims
- 4278US2025259667A1Word Line Delay Interlock Circuit for Write OperationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4377US12436858B2Scan synchronous-write-through testing architectures for a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 4477US2025259661A1Memory device, read clock generation circuit, and method for controlling read operation in memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4576US12131770B1Word line booster circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 29, 2024·0 cites·20 claims
- 4676US2025191669A1Method, device, and circuit for high-speed memoriesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4776US2025095725A1Memory device with signal edge sharpener circuitryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4875US12456511B2Memory circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·20 claims
- 4974US12379740B2Technique to mitigate clock generation failure at high input clock slewTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
- 5074US8619483B2Memory circuits, systems, and methods for accessing the memory circuitsKATOCH ATUL·Filed 2010·Granted Dec 31, 2013·4 cites·20 claims
Showing the top 50 of 123 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →