Inventor · disambiguated record
Atsushi Noma
Also filed as: NOMA ATSUSHI
9 granted patents·3 pending applications·111 citations·filing 1996–2025
87Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD5MATSUSHITA ELECTRONICS CORP2PANASONIC CORP1TOWER PARTNERS SEMICONDUCTOR CO LTD1YAZAKI CORP1
Top patents by PatentIndex Score
12 records- 0176US5818079ASemiconductor integrated circuit device having a ceramic thin film capacitorMATSUSHITA ELECTRONICS CORP·Filed 1996·Granted Oct 6, 1998·40 cites·4 claims
- 0274US7615814B2Ferroelectric device having a contact for taking the potential of a metal film and a plurality of capacitors positioned periodicallyPANASONIC CORP·Filed 2007·Granted Nov 10, 2009·6 cites·6 claims
- 0368US6365513B1Method of making a semiconductor device including testing before thinning the semiconductor substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Apr 2, 2002·36 cites·2 claims
- 0468US2025226597A1Connector-attached wire harness and connectorYAZAKI CORP·Filed 2025·Application pending·0 cites
- 0558US6498094B2Method for providing a contact hole formed in an insulating filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Dec 24, 2002·19 cites·11 claims
- 0657US12432915B2Semiconductor device having a memory element with a source region and drain region and having multiple assistance elementsTOWER PARTNERS SEMICONDUCTOR CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·13 claims
- 0754US7203108B2Reliability test method for a ferroelectric memory deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Apr 10, 2007·3 cites·13 claims
- 0853US6620738B2Etchant and method for fabricating a semiconductor device using the sameMATSUSHITA ELECTRONICS CORP·Filed 2000·Granted Sep 16, 2003·2 cites·4 claims
- 0944US7157348B2Method for fabricating capacitor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jan 2, 2007·2 cites·23 claims
- 1044US2004077168A1Etchant and method for fabricating a semiconductor device using the sameFiled 2003·Application pending·0 cites
- 1143US2003089880A1Etchant and method for fabricating a semiconductor device using the sameFiled 2002·Application pending·0 cites
- 1233US7111210B2Accelerated test method for ferroelectric memory deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 19, 2006·3 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →