Inventor · disambiguated record
Barbara E. Landini
Also filed as: LANDINI BARBARA E
5 granted patents·381 citations·filing 1999–2002
83Inventor score
Technology areasH10P
Top patents by PatentIndex Score
5 records- 0196US6447604B1Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devicesADVANCED TECH MATERIALS·Filed 2000·Granted Sep 10, 2002·306 cites·73 claims
- 0282US8212259B2III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substratesFLYNN JEFFREY S·Filed 2002·Granted Jul 3, 2012·22 cites·72 claims
- 0375US6641938B2Silicon carbide epitaxial layers grown on substrates offcut towards <1100>ADVANCED TECH MATERIALS·Filed 2001·Granted Nov 4, 2003·17 cites·14 claims
- 0471US6329088B1Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>ADVANCED TECH MATERIALS·Filed 1999·Granted Dec 11, 2001·36 cites·64 claims
- 0533US6800879B2Method of preparing indium phosphide heterojunction bipolar transistorsKOPIN CORP·Filed 2002·Granted Oct 5, 2004·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →