Inventor · disambiguated record
Bang-Tai Tang
Also filed as: TANG BANG TAI
14 granted patents·1 pending application·52 citations·filing 2008–2023
90Inventor score
Top patents by PatentIndex Score
15 records- 0195US10002933B1Semiconductor device structure with cap layer with top and bottom portions over gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 19, 2018·16 cites·19 claims
- 0294US9159907B2Hybrid film for protecting MTJ stacks of MRAMTANG BANG-TAI·Filed 2011·Granted Oct 13, 2015·19 cites·18 claims
- 0392US10748808B2Dielectric gap-filling process for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·6 cites·20 claims
- 0491US11488855B2Dielectric gap-filling process for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·2 cites·20 claims
- 0586US10170318B2Self-aligned contact and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 1, 2019·3 cites·20 claims
- 0683US12198974B2Dielectric gap-filling process for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 0780US11742238B2Dielectric gap-filling process for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·0 cites·20 claims
- 0880US10361113B2Formation and in-situ treatment processes for gap fill layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 23, 2019·2 cites·20 claims
- 0976US10727069B2Self-aligned contact and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·1 cites·20 claims
- 1073US10354923B2Semiconductor device and method for atomic layer deposition of a dielectric over a substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·1 cites·20 claims
- 1170US11335562B2Self-aligned contact and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 17, 2022·0 cites·20 claims
- 1268US8753899B2Magnetoresistive random access memory (MRAM) device and fabrication methods thereofTANG BANG-TAI·Filed 2011·Granted Jun 17, 2014·2 cites·20 claims
- 1362US10643902B2Semiconductor device and method for atomic layer deposition of a dielectric over a substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 5, 2020·0 cites·20 claims
- 1460US10937686B2Formation and in-situ treatment processes for gap fill layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·0 cites·20 claims
- 1545US2009023290A1Planarization methodNANYA TECHNOLOGY CORP·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →