Inventor · disambiguated record
Bao-Ru Young
Also filed as: YOUNG BAO-RU · YOUNG BAO-RU FENG
170 granted patents·24 pending applications·537 citations·filing 1998–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD132TAIWAN SEMICONDUCTOR MFG33CHUANG HARRY HAK-LAY9CHUANG HAK-LAY5NG JIN-AUN3
Top patents by PatentIndex Score
194 records- 0198US10867101B1Leakage reduction between two transistor devices on a same continuous finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 15, 2020·7 cites·20 claims
- 0297US8557659B2Spacer structures of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Oct 15, 2013·23 cites·20 claims
- 0396US10079289B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 18, 2018·13 cites·20 claims
- 0496US8183644B1Metal gate structure of a CMOS semiconductor deviceCHUANG HARRY HAK-LAY·Filed 2011·Granted May 22, 2012·27 cites·20 claims
- 0595US10276445B2Leakage reduction methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·9 cites·20 claims
- 0694US10141296B2Dummy fin cell placement in an integrated circuit layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·10 cites·20 claims
- 0794US9865589B1System and method of fabricating ESD FinFET with improved metal landing in the drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·8 cites·20 claims
- 0894US9773879B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 26, 2017·10 cites·20 claims
- 0994US9508721B2Metal gate structure of a CMOS semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 29, 2016·8 cites·20 claims
- 1093US11855073B2ESD structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 1193US10515850B2Method and IC design with non-linear power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·5 cites·20 claims
- 1293US10354997B2Method for manufacturing semiconductor device with replacement gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·6 cites·20 claims
- 1393US8450834B2Spacer structure of a field effect transistor with an oxygen-containing layer between two oxygen-sealing layersNG JIN-AUN·Filed 2010·Granted May 28, 2013·16 cites·25 claims
- 1493US8343867B2Method for main spacer trim-backTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 1, 2013·16 cites·20 claims
- 1593US8304840B2Spacer structures of a semiconductor deviceTEO LEE-WEE·Filed 2010·Granted Nov 6, 2012·12 cites·20 claims
- 1692US10971588B2Semiconductor device including FinFET with self-align contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·5 cites·20 claims
- 1792US8890260B2Polysilicon design for replacement gate technologyCHUANG HARRY HAK-LAY·Filed 2009·Granted Nov 18, 2014·14 cites·21 claims
- 1891US10515957B2Semiconductor device having finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·4 cites·20 claims
- 1990US8846510B2Method and structure to boost MOSFET performance and NBTITAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 30, 2014·10 cites·20 claims
- 2090US8703595B2N/P boundary effect reduction for metal gate transistorsCHUANG HAK-LAY·Filed 2011·Granted Apr 22, 2014·9 cites·20 claims
- 2190US8450216B2Contact etch stop layers of a field effect transistorTEO LEE-WEE·Filed 2010·Granted May 28, 2013·8 cites·20 claims
- 2289US9595443B2Metal gate structure of a semiconductor deviceZHU MING·Filed 2011·Granted Mar 14, 2017·8 cites·20 claims
- 2389US8969949B2Structure and method for static random access memory device of vertical tunneling field effect transistorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 3, 2015·10 cites·21 claims
- 2489US2025311354A1Polysilicon Design for Replacement Gate TechnologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2588US10832958B2Leakage reduction methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·3 cites·20 claims
- 2688US10535746B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·4 cites·20 claims
- 2788US10340348B2Method of manufacturing finFETs with self-align contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 2, 2019·4 cites·18 claims
- 2888US10276559B2System and method of fabricating ESD FinFET with improved metal landing in the drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·3 cites·20 claims
- 2988US10204202B2Dummy fin cell placement in an integrated circuit layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 12, 2019·5 cites·20 claims
- 3088US10164034B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·4 cites·20 claims
- 3188US9412841B2Method of fabricating a transistor using contact etch stop layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·4 cites·20 claims
- 3288US8039388B1Main spacer trim-back method for replacement gate processTAIWAM SEMICONDUCTOR MFG COMPANY LTD·Filed 2010·Granted Oct 18, 2011·15 cites·21 claims
- 3387US12419102B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
- 3487US10854512B2Method and IC design with non-linear power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·2 cites·20 claims
- 3587US9865510B2Device and methods for high-K and metal gate slacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 9, 2018·4 cites·20 claims
- 3687US9219124B2Metal gate semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 22, 2015·7 cites·17 claims
- 3787US8822283B2Self-aligned insulated film for high-k metal gate deviceNG JIN-AUN·Filed 2011·Granted Sep 2, 2014·7 cites·20 claims
- 3887US2024312838A1Method and ic design with non-linear power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3985US12300696B2Semiconductor devices having fins and multiple isolation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 4085US10236220B1Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 19, 2019·3 cites·20 claims
- 4185US8546227B2Contact for high-K metal gate deviceCHUANG HAK-LAY·Filed 2011·Granted Oct 1, 2013·7 cites·13 claims
- 4285US8003467B2Method for making a semiconductor device having metal gate stacksTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Aug 23, 2011·11 cites·12 claims
- 4384US11996329B2Method and IC design with non-linear power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 28, 2024·0 cites·20 claims
- 4484US11393724B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 19, 2022·1 cites·20 claims
- 4584US9859364B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 2, 2018·4 cites·20 claims
- 4683US10522634B2Finfet with self-aligned source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·2 cites·20 claims
- 4783USRE45060ESpacer structures of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 5, 2014·4 cites·21 claims
- 4883US6436851B1Method for spin coating a high viscosity liquid on a waferTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 20, 2002·39 cites·20 claims
- 4982US12288784B2Semiconductor structures having wells with protruding sections for pickup cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 5082US12068201B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
Showing the top 50 of 194 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Bao-Ru Young files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →