Inventor · disambiguated record
Beak-Hyung Cho
Also filed as: CHO BEAK-HYUNG
80 granted patents·2 pending applications·1,491 citations·filing 2000–2015
99Inventor score
Top patents by PatentIndex Score
82 records- 0198US8179711B2Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cellKIM SUNG-MIN·Filed 2008·Granted May 15, 2012·122 cites·32 claims
- 0298US7542356B2Semiconductor memory device and method for reducing cell activation during write operationsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·76 cites·18 claims
- 0398US6928022B2Write driver circuit in phase change memory device and method for applying write currentSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 9, 2005·177 cites·33 claims
- 0497US8134866B2Phase change memory devices and systems, and related programming methodsBAE JUN-SOO·Filed 2010·Granted Mar 13, 2012·64 cites·20 claims
- 0597US8050084B2Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Nov 1, 2011·42 cites·19 claims
- 0697US7405960B2Semiconductor memory device and method for biasing dummy line thereforSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 29, 2008·62 cites·17 claims
- 0796US7304885B2Phase change memories and/or methods of programming phase change memories using sequential reset controlSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 4, 2007·33 cites·31 claims
- 0896US7236393B2Phase-change semiconductor memory device and method of programming sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 26, 2007·44 cites·21 claims
- 0996US7126847B2Method and driver for programming phase change memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 24, 2006·51 cites·22 claims
- 1094US8139432B2Variable resistance memory device and system thereofCHOI BYUNG-GIL·Filed 2010·Granted Mar 20, 2012·21 cites·19 claims
- 1193US7548451B2Phase change random access memorySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 16, 2009·24 cites·23 claims
- 1293US7427531B2Phase change memory devices employing cell diodes and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 23, 2008·27 cites·30 claims
- 1392US7453716B2Semiconductor memory device with stacked control transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 18, 2008·28 cites·41 claims
- 1492US7450415B2Phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 11, 2008·24 cites·27 claims
- 1592US7391644B2Phase-changeable memory device and read method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·29 cites·22 claims
- 1692US7227776B2Phase change random access memory (PRAM) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 5, 2007·24 cites·20 claims
- 1791US7688621B2Memory system, memory device and apparatus including writing driver circuit for a variable resistive memorySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 30, 2010·26 cites·20 claims
- 1891US7656719B2Phase change memory device generating program current and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 2, 2010·14 cites·11 claims
- 1991US7274586B2Method for programming phase-change memory array to set state and circuit of a phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 25, 2007·26 cites·24 claims
- 2091US7110286B2Phase-change memory device and method of writing a phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 19, 2006·55 cites·48 claims
- 2191US7012834B2Writing driver circuit of phase-change memorySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 14, 2006·53 cites·20 claims
- 2290US7502251B2Phase-change memory device and method of writing a phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 10, 2009·23 cites·24 claims
- 2390US7295464B2Phase change memory device and method of programming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 13, 2007·21 cites·13 claims
- 2490US6943395B2Phase random access memory with high densitySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 13, 2005·45 cites·20 claims
- 2588US7515459B2Method of programming a memory cell array using successive pulses of increased durationSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 7, 2009·19 cites·8 claims
- 2688US7262990B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 28, 2007·17 cites·14 claims
- 2788US7215592B2Memory device with reduced word line resistanceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 8, 2007·16 cites·19 claims
- 2887US7580278B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 25, 2009·16 cites·10 claims
- 2984US8259511B2Phase change memory device generating program current and method thereofCHO BEAK-HYUNG·Filed 2011·Granted Sep 4, 2012·5 cites·12 claims
- 3083US7304886B2Writing driver circuit of phase-change memorySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 4, 2007·12 cites·20 claims
- 3181US8223527B2Semiconductor device having memory array, method of writing, and systems associated therewithLEE KWANG JIN·Filed 2008·Granted Jul 17, 2012·12 cites·15 claims
- 3281US7457152B2Non-volatile memory devices and systems including phase-change one-time-programmable (OTP) memory cells and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 25, 2008·12 cites·33 claims
- 3379US7821865B2Nonvolatile memory device using variable resistive elementsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 26, 2010·6 cites·19 claims
- 3479US7817465B2Phase change random access memorySAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 19, 2010·9 cites·28 claims
- 3579US7417887B2Phase change memory device and method of driving word line thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 26, 2008·11 cites·14 claims
- 3679US7397681B2Nonvolatile memory devices having enhanced bit line and/or word line driving capabilitySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·11 cites·7 claims
- 3779US7242605B2Phase-change memory device and method that maintains the resistance of a phase-change material in a reset state within a constant resistance rangeSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 10, 2007·26 cites·5 claims
- 3879US7126846B2Method and driver for programming phase change memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 24, 2006·9 cites·17 claims
- 3978US7643335B2Apparatus and systems using phase change memoriesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 5, 2010·7 cites·15 claims
- 4078US7317655B2Memory cell array biasing method and a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 8, 2008·5 cites·23 claims
- 4176US7511993B2Phase change memory device and related programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 31, 2009·9 cites·17 claims
- 4276US7082051B2Method and driver for programming phase change memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 25, 2006·22 cites·12 claims
- 4375US8040719B2Nonvolatile memory devices having bit line discharge control circuits therein that provide equivalent bit line discharge controlSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 18, 2011·10 cites·13 claims
- 4475US7889548B2Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 15, 2011·6 cites·12 claims
- 4575US7751232B2Method of testing PRAM deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 6, 2010·7 cites·15 claims
- 4675US7499316B2Phase change memory devices and program methodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 3, 2009·9 cites·11 claims
- 4773US7986551B2Phase change random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jul 26, 2011·4 cites·5 claims
- 4873US7936594B2Semiconductor memory devices having core structures for multi-writingSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 3, 2011·8 cites·20 claims
- 4970US9147440B2Semiconductor memory device having dummy bit lineSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 29, 2015·4 cites·9 claims
- 5069US7869271B2Method of testing PRAM deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 11, 2011·3 cites·4 claims
Showing the top 50 of 82 patent records by PatentIndex Score.
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