Inventor · disambiguated record
Benjamin Chu-Kung
Also filed as: CHU-KUNG BENJAMIN
195 granted patents·20 pending applications·780 citations·filing 2008–2024
99Inventor score
Top patents by PatentIndex Score
215 records- 0198US9123567B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureRADOSAVLJEVIC MARKO·Filed 2011·Granted Sep 1, 2015·66 cites·26 claims
- 0298US8283653B2Non-planar germanium quantum well devicesPILLARISETTY RAVI·Filed 2009·Granted Oct 9, 2012·47 cites·20 claims
- 0397US9240410B2Group III-N nanowire transistorsTHEN HAN WUI·Filed 2011·Granted Jan 19, 2016·25 cites·17 claims
- 0497US8575596B2Non-planar germanium quantum well devicesPILLARISETTY RAVI·Filed 2012·Granted Nov 5, 2013·24 cites·14 claims
- 0596US9209290B2III-N material structure for gate-recessed transistorsINTEL CORP·Filed 2015·Granted Dec 8, 2015·11 cites·14 claims
- 0696US9123790B2Contact techniques and configurations for reducing parasitic resistance in nanowire transistorsPILLARISETTY RAVI·Filed 2011·Granted Sep 1, 2015·24 cites·12 claims
- 0796US8785909B2Non-planar semiconductor device having channel region with low band-gap cladding layerRADOSAVLJEVIC MARKO·Filed 2012·Granted Jul 22, 2014·28 cites·31 claims
- 0896US8768271B1Group III-N transistors on nanoscale template structuresTHEN HAN WUI·Filed 2012·Granted Jul 1, 2014·16 cites·18 claims
- 0995US9660064B2Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stackINTEL CORP·Filed 2013·Granted May 23, 2017·15 cites·26 claims
- 1095US9530878B2III-N material structure for gate-recessed transistorsINTEL CORP·Filed 2015·Granted Dec 27, 2016·8 cites·14 claims
- 1195US9337291B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2015·Granted May 10, 2016·9 cites·7 claims
- 1295US9245989B2High voltage field effect transistorsTHEN HAN WUI·Filed 2011·Granted Jan 26, 2016·17 cites·20 claims
- 1395US8823059B2Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stackDEWEY GILBERT·Filed 2012·Granted Sep 2, 2014·15 cites·31 claims
- 1494US9806203B2Nonplanar III-N transistors with compositionally graded semiconductor channelsINTEL CORP·Filed 2016·Granted Oct 31, 2017·7 cites·36 claims
- 1594US9755062B2III-N material structure for gate-recessed transistorsINTEL CORP·Filed 2016·Granted Sep 5, 2017·7 cites·20 claims
- 1694US9397188B2Group III-N nanowire transistorsINTEL CORP·Filed 2015·Granted Jul 19, 2016·7 cites·8 claims
- 1794US9306068B2Stain compensation in transistorsINTEL CORP·Filed 2015·Granted Apr 5, 2016·7 cites·20 claims
- 1894US8896101B2Nonplanar III-N transistors with compositionally graded semiconductor channelsTHEN HAN WUI·Filed 2012·Granted Nov 25, 2014·14 cites·19 claims
- 1993US11222977B2Source/drain diffusion barrier for germanium NMOS transistorsINTEL CORP·Filed 2017·Granted Jan 11, 2022·8 cites·22 claims
- 2093US10096683B2Group III-N transistor on nanoscale template structuresINTEL CORP·Filed 2017·Granted Oct 9, 2018·5 cites·20 claims
- 2193US9570614B2Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxationINTEL CORP·Filed 2013·Granted Feb 14, 2017·14 cites·8 claims
- 2293US9461160B2Non-planar III-N transistorTHEN HAN WUI·Filed 2011·Granted Oct 4, 2016·13 cites·10 claims
- 2393US8987091B2III-N material structure for gate-recessed transistorsTHEN HAN WUI·Filed 2011·Granted Mar 24, 2015·11 cites·21 claims
- 2492US11264512B2Thin film transistors having U-shaped featuresINTEL CORP·Filed 2018·Granted Mar 1, 2022·6 cites·20 claims
- 2592US10541305B2Group III-N nanowire transistorsINTEL CORP·Filed 2019·Granted Jan 21, 2020·4 cites·20 claims
- 2692US10026845B2Deep gate-all-around semiconductor device having germanium or group III-V active layerINTEL CORP·Filed 2017·Granted Jul 17, 2018·5 cites·25 claims
- 2792US9716149B2Group III-N transistors on nanoscale template structuresINTEL CORP·Filed 2016·Granted Jul 25, 2017·5 cites·20 claims
- 2892US9666492B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureINTEL CORP·Filed 2015·Granted May 30, 2017·6 cites·17 claims
- 2992US9136343B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2013·Granted Sep 15, 2015·9 cites·25 claims
- 3092US8890120B2Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETsKOTLYAR ROZA·Filed 2012·Granted Nov 18, 2014·13 cites·14 claims
- 3191US10325774B2Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devicesINTEL CORP·Filed 2014·Granted Jun 18, 2019·8 cites·16 claims
- 3291US10186581B2Group III-N nanowire transistorsINTEL CORP·Filed 2017·Granted Jan 22, 2019·4 cites·20 claims
- 3391US8809836B2Techniques for forming contacts to quantum well transistorsPILLARISETTY RAVI·Filed 2013·Granted Aug 19, 2014·8 cites·8 claims
- 3491US8785907B2Epitaxial film growth on patterned substrateGOEL NITI·Filed 2012·Granted Jul 22, 2014·13 cites·24 claims
- 3591US7777282B2Self-aligned tunneling pocket in field-effect transistors and processes to form sameINTEL CORP·Filed 2008·Granted Aug 17, 2010·17 cites·31 claims
- 3690US10847656B2Fabrication of non-planar IGZO devices for improved electrostaticsINTEL CORP·Filed 2015·Granted Nov 24, 2020·6 cites·18 claims
- 3790US10096709B2Aspect ratio trapping (ART) for fabricating vertical semiconductor devicesINTEL CORP·Filed 2014·Granted Oct 9, 2018·7 cites·25 claims
- 3890US8872225B2Defect transferred and lattice mismatched epitaxial filmINTEL CORP·Filed 2012·Granted Oct 28, 2014·12 cites·25 claims
- 3989US10784170B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureINTEL CORP·Filed 2019·Granted Sep 22, 2020·3 cites·14 claims
- 4089US10032911B2Wide band gap transistor on non-native semiconductor substrateINTEL CORP·Filed 2017·Granted Jul 24, 2018·5 cites·16 claims
- 4189US8954021B2Group III-N transistors on nanoscale template structuresTHEN HAN WUI·Filed 2014·Granted Feb 10, 2015·5 cites·11 claims
- 4289US8592803B2Germanium-based quantum well devicesPILLARISETTY RAVI·Filed 2012·Granted Nov 26, 2013·6 cites·17 claims
- 4389US8193523B2Germanium-based quantum well devicesPILLARISETTY RAVI·Filed 2009·Granted Jun 5, 2012·9 cites·20 claims
- 4488US11417770B2Vertical thin-film transistors between metal layersINTEL CORP·Filed 2018·Granted Aug 16, 2022·5 cites·25 claims
- 4588US10373977B2Transistor fin formation via cladding on sacrificial coreINTEL CORP·Filed 2015·Granted Aug 6, 2019·6 cites·20 claims
- 4688US10319646B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureINTEL CORP·Filed 2017·Granted Jun 11, 2019·3 cites·18 claims
- 4788US10229991B2III-N epitaxial device structures on free standing silicon mesasINTEL CORP·Filed 2014·Granted Mar 12, 2019·6 cites·25 claims
- 4888US9947780B2High electron mobility transistor (HEMT) and method of fabricationINTEL CORP·Filed 2016·Granted Apr 17, 2018·4 cites·13 claims
- 4988US9847448B2Forming LED structures on silicon finsINTEL CORP·Filed 2013·Granted Dec 19, 2017·8 cites·30 claims
- 5088US9391181B2Lattice mismatched hetero-epitaxial filmINTEL CORP·Filed 2012·Granted Jul 12, 2016·10 cites·14 claims
Showing the top 50 of 215 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →