Inventor · disambiguated record
Bernard Dieny
Also filed as: DIENY BERNARD
75 granted patents·8 pending applications·2,973 citations·filing 1990–2024
99Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE37DIENY BERNARD14HEADWAY TECHNOLOGIES INC7IBM7CROCUS TECHNOLOGY SA5
Top patents by PatentIndex Score
83 records- 0199US5287238ADual spin valve magnetoresistive sensorIBM·Filed 1992·Granted Feb 15, 1994·245 cites·36 claims
- 0298US6950335B2Magnetic tunnel junction magnetic device, memory and writing and reading methods using said deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted Sep 27, 2005·164 cites·17 claims
- 0398US6603677B2Three-layered stacked magnetic spin polarization device with memoryCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Aug 5, 2003·329 cites·11 claims
- 0498US6532164B2Magnetic spin polarization and magnetization rotation device with memory and writing process, using such a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Mar 11, 2003·359 cites·24 claims
- 0598US5206590AMagnetoresistive sensor based on the spin valve effectIBM·Filed 1990·Granted Apr 27, 1993·477 cites·16 claims
- 0697US8208295B2Heat assisted magnetic write elementDIENY BERNARD·Filed 2010·Granted Jun 26, 2012·33 cites·25 claims
- 0797US5159513AMagnetoresistive sensor based on the spin valve effectIBM·Filed 1991·Granted Oct 27, 1992·268 cites·20 claims
- 0896US7813202B2Thin-film magnetic device with strong spin polarization perpendicular to the plane of the layers, magnetic tunnel junction and spin valve using such a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Oct 12, 2010·38 cites·16 claims
- 0996US7411817B2Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the sameCENTRE NAT RECH SCIENT·Filed 2006·Granted Aug 12, 2008·51 cites·16 claims
- 1096US5301079ACurrent biased magnetoresistive spin valve sensorIBM·Filed 1992·Granted Apr 5, 1994·101 cites·28 claims
- 1195US8279666B2Spin polarised magnetic deviceDIENY BERNARD·Filed 2010·Granted Oct 2, 2012·130 cites·25 claims
- 1293US8542072B2Spin-valve or tunnel-junction radio-frequency oscillator, process for adjusting the frequency of such an oscillator and network consisting of a plurality of such oscillatorsDIENY BERNARD·Filed 2011·Granted Sep 24, 2013·17 cites·18 claims
- 1393US6882509B2GMR configuration with enhanced spin filteringHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Apr 19, 2005·32 cites·12 claims
- 1492US6888703B2Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR headsHEADWAY TECHNOLOGIES INC·Filed 2001·Granted May 3, 2005·33 cites·10 claims
- 1591US8624590B2Low noise magnetic field sensor using a lateral spin transferDIENY BERNARD·Filed 2011·Granted Jan 7, 2014·12 cites·30 claims
- 1691US6770382B1GMR configuration with enhanced spin filteringHEADWAY TECHNOLOGIES INC·Filed 1999·Granted Aug 3, 2004·63 cites·12 claims
- 1790US8513944B2Three-layer magnetic element, magnetic field sensor, magnetic memory and magnetic logic gate using such an elementRODMACQ BERNARD·Filed 2010·Granted Aug 20, 2013·17 cites·26 claims
- 1890US7453672B2Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconducting layer alternatively of magnetic materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted Nov 18, 2008·37 cites·16 claims
- 1989US6985337B2Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR headsHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Jan 10, 2006·6 cites·8 claims
- 2088US10978234B2Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stackCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Apr 13, 2021·5 cites·20 claims
- 2188US9431608B2Hybrid non-volatile memory device and method for manufacturing such a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Aug 30, 2016·7 cites·15 claims
- 2288US5574605AAntiferromagnetic exchange coupling in magnetoresistive spin valve sensorsIBM·Filed 1995·Granted Nov 12, 1996·55 cites·19 claims
- 2387US10056266B2Method for manufacturing a resistive device for a memory or logic circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Aug 21, 2018·5 cites·20 claims
- 2487US7772659B2Magnetic device having perpendicular magnetization and interaction compensating interlayerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Aug 10, 2010·33 cites·12 claims
- 2587US5341261AMagnetoresistive sensor having multilayer thin film structureIBM·Filed 1991·Granted Aug 23, 1994·56 cites·16 claims
- 2686US8669122B2Method for producing a magnetic tunnel junction and magnetic tunnel junction thus obtainedVIALA BERNARD·Filed 2011·Granted Mar 11, 2014·12 cites·8 claims
- 2786US7006337B2Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR headsHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Feb 28, 2006·8 cites·17 claims
- 2885US7821818B2Magnetoresistive tunnel junction magnetic device and its application to MRAMCOMISSARIAT A L EN ATOMIQUE ET·Filed 2006·Granted Oct 26, 2010·42 cites·24 claims
- 2984US7944736B2Magnetoresistive deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted May 17, 2011·16 cites·19 claims
- 3083US8247093B2Magnetic multilayer device, method for producing such a device, magnetic field sensor, magnetic memory and logic gate using such a deviceRODMACQ BERNARD·Filed 2007·Granted Aug 21, 2012·16 cites·22 claims
- 3182US10658574B2Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted May 19, 2020·2 cites·14 claims
- 3281US11852700B2Magnetic element having an improved measurement rangeCROCUS TECHNOLOGY SA·Filed 2020·Granted Dec 26, 2023·2 cites·12 claims
- 3381US5598308AMagnetoresistive sensor having multilayer thin film structureIBM·Filed 1994·Granted Jan 28, 1997·39 cites·7 claims
- 3480US10818329B2Magnetic tunnel junction with perpendicular shape anisotropy and minimised variation of temperature memory point and logic element including the magnetic tunnel junction, method of manufacturing the magnetic tunnel junctionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Oct 27, 2020·2 cites·20 claims
- 3580US7898833B2Magnetic element with thermally-assisted writingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Mar 1, 2011·12 cites·11 claims
- 3680US6462641B1Magnetoresistor with tunnel effect and magnetic sensor using sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted Oct 8, 2002·58 cites·10 claims
- 3780US6013365AMulti-layer structure and sensor and manufacturing processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1996·Granted Jan 11, 2000·50 cites·31 claims
- 3877US7957181B2Magnetic tunnel junction magnetic memoryCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Jun 7, 2011·10 cites·34 claims
- 3976US8767453B2Magnetic device with exchange biasDIENY BERNARD·Filed 2012·Granted Jul 1, 2014·6 cites·11 claims
- 4075US8068316B2Low noise magnetic field sensorDIENY BERNARD·Filed 2008·Granted Nov 29, 2011·4 cites·31 claims
- 4175US8063709B2Spin-transfer torque oscillatorFIRASTRAU IOANA·Filed 2007·Granted Nov 22, 2011·11 cites·18 claims
- 4273US7480175B2Magnetic tunnel junction device and writing/reading for said deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Jan 20, 2009·10 cites·24 claims
- 4372US5635835ASelf biased multilayer magnetoresistance sensorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1995·Granted Jun 3, 1997·36 cites·17 claims
- 4471US8102703B2Magnetic element with a fast spin transfer torque writing procedureNOZIERES JEAN-PIERRE·Filed 2009·Granted Jan 24, 2012·7 cites·40 claims
- 4570US5677625AGiant magnetoresistance, production process and application to a magnetic sensorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1996·Granted Oct 14, 1997·31 cites·13 claims
- 4669US8947916B2Thermally assisted magnetic writing deviceDIENY BERNARD·Filed 2011·Granted Feb 3, 2015·2 cites·17 claims
- 4767US8400735B2Magnetic recording mediumDIENY BERNARD·Filed 2008·Granted Mar 19, 2013·1 cites·18 claims
- 4865US9324936B2Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signalCROCUS TECHNOLOGY SA·Filed 2013·Granted Apr 26, 2016·2 cites·10 claims
- 4964US2025231259A1Magnetorestistive sensor sensitive to an out-of-plane magnetic fieldCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 5063US9835696B2Magnetic field sensor for the detection of at least two magnetic field components including flux concentrators and magnetoresistive elementsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Dec 5, 2017·1 cites·14 claims
Showing the top 50 of 83 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →