Inventor · disambiguated record
Been-Yih Jin
Also filed as: JIN BEEN Y · JIN BEEN-YIH
86 granted patents·15 pending applications·2,336 citations·filing 1994–2017
99Inventor score
Top patents by PatentIndex Score
101 records- 0199US7485536B2Abrupt junction formation by atomic layer epitaxy of in situ delta doped dopant diffusion barriersINTEL CORP·Filed 2005·Granted Feb 3, 2009·155 cites·4 claims
- 0299US7241653B2Nonplanar device with stress incorporation layer and method of fabricationINTEL CORP·Filed 2005·Granted Jul 10, 2007·125 cites·30 claims
- 0398US8294180B2CMOS devices with a single work function gate electrode and method of fabricationDOYLE BRIAN S·Filed 2011·Granted Oct 23, 2012·37 cites·14 claims
- 0498US8283653B2Non-planar germanium quantum well devicesPILLARISETTY RAVI·Filed 2009·Granted Oct 9, 2012·47 cites·20 claims
- 0598US7745270B2Tri-gate patterning using dual layer gate stackINTEL CORP·Filed 2007·Granted Jun 29, 2010·121 cites·20 claims
- 0698US7531393B2Non-planar MOS structure with a strained channel regionINTEL CORP·Filed 2006·Granted May 12, 2009·121 cites·3 claims
- 0798US7268058B2Tri-gate transistors and methods to fabricate sameINTEL CORP·Filed 2004·Granted Sep 11, 2007·164 cites·20 claims
- 0898US7193279B2Non-planar MOS structure with a strained channel regionINTEL CORP·Filed 2005·Granted Mar 20, 2007·76 cites·23 claims
- 0998US6909151B2Nonplanar device with stress incorporation layer and method of fabricationINTEL CORP·Filed 2003·Granted Jun 21, 2005·241 cites·31 claims
- 1097US8575596B2Non-planar germanium quantum well devicesPILLARISETTY RAVI·Filed 2012·Granted Nov 5, 2013·24 cites·14 claims
- 1197US8211772B2Two-dimensional condensation for uniaxially strained semiconductor finsKAVALIEROS JACK T·Filed 2009·Granted Jul 3, 2012·72 cites·20 claims
- 1297US8110458B2Fabrication of germanium nanowire transistorsJIN BEEN-YIH·Filed 2010·Granted Feb 7, 2012·51 cites·15 claims
- 1397US7851790B2Isolated Germanium nanowire on Silicon finINTEL CORP·Filed 2008·Granted Dec 14, 2010·43 cites·3 claims
- 1497US7821061B2Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applicationsINTEL CORP·Filed 2007·Granted Oct 26, 2010·41 cites·5 claims
- 1597US7348284B2Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flowINTEL CORP·Filed 2004·Granted Mar 25, 2008·141 cites·10 claims
- 1696US7902014B2CMOS devices with a single work function gate electrode and method of fabricationINTEL CORP·Filed 2007·Granted Mar 8, 2011·35 cites·7 claims
- 1796US7767560B2Three dimensional strained quantum wells and three dimensional strained surface channels by Ge confinement methodINTEL CORP·Filed 2007·Granted Aug 3, 2010·39 cites·9 claims
- 1896US7727830B2Fabrication of germanium nanowire transistorsINTEL CORP·Filed 2007·Granted Jun 1, 2010·58 cites·13 claims
- 1996US7714397B2Tri-gate transistor device with stress incorporation layer and method of fabricationINTEL CORP·Filed 2006·Granted May 11, 2010·24 cites·15 claims
- 2096US7569869B2Transistor having tensile strained channel and system including sameINTEL CORP·Filed 2007·Granted Aug 4, 2009·59 cites·15 claims
- 2195US8421059B2Strain-inducing semiconductor regionsDATTA SUMAN·Filed 2010·Granted Apr 16, 2013·15 cites·5 claims
- 2295US8405164B2Tri-gate transistor device with stress incorporation layer and method of fabricationHARELAND SCOTT A·Filed 2010·Granted Mar 26, 2013·14 cites·5 claims
- 2395US7709312B2Methods for inducing strain in non-planar transistor structuresINTEL CORP·Filed 2006·Granted May 4, 2010·34 cites·12 claims
- 2495US6825506B2Field effect transistor and method of fabricationINTEL CORP·Filed 2002·Granted Nov 30, 2004·72 cites·27 claims
- 2594US8530884B2Strain inducing semiconductor regionsDATTA SUMAN·Filed 2011·Granted Sep 10, 2013·13 cites·15 claims
- 2694US8169027B2Substrate band gap engineered multi-gate pMOS devicesDOYLE BRIAN S·Filed 2010·Granted May 1, 2012·16 cites·17 claims
- 2794US7968957B2Transistor gate electrode having conductor material layerINTEL CORP·Filed 2010·Granted Jun 28, 2011·11 cites·20 claims
- 2893US7592213B2Tensile strained NMOS transistor using group III-N source/drain regionsINTEL CORP·Filed 2005·Granted Sep 22, 2009·22 cites·11 claims
- 2993US6900481B2Non-silicon semiconductor and high-k gate dielectric metal oxide semiconductor field effect transistorsINTEL CORP·Filed 2002·Granted May 31, 2005·64 cites·12 claims
- 3092US7960794B2Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flowINTEL CORP·Filed 2007·Granted Jun 14, 2011·20 cites·10 claims
- 3192US7825400B2Strain-inducing semiconductor regionsINTEL CORP·Filed 2006·Granted Nov 2, 2010·14 cites·9 claims
- 3292US7176075B2Field effect transistor and method of fabricationINTEL CORP·Filed 2005·Granted Feb 13, 2007·17 cites·17 claims
- 3390US7223679B2Transistor gate electrode having conductor material layerINTEL CORP·Filed 2003·Granted May 29, 2007·34 cites·26 claims
- 3489US8193523B2Germanium-based quantum well devicesPILLARISETTY RAVI·Filed 2009·Granted Jun 5, 2012·9 cites·20 claims
- 3588US9691856B2Extreme high mobility CMOS logicINTEL CORP·Filed 2015·Granted Jun 27, 2017·3 cites·18 claims
- 3688US8120065B2Tensile strained NMOS transistor using group III-N source/drain regionsDATTA SUMAN·Filed 2009·Granted Feb 21, 2012·12 cites·17 claims
- 3788US7713803B2Mechanism for forming a remote delta doping layer of a quantum well structureINTEL CORP·Filed 2007·Granted May 11, 2010·12 cites·9 claims
- 3888US7470972B2Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stressINTEL CORP·Filed 2005·Granted Dec 30, 2008·15 cites·7 claims
- 3988US7235809B2Semiconductor channel on insulator structureINTEL CORP·Filed 2005·Granted Jun 26, 2007·11 cites·3 claims
- 4087US8080820B2Apparatus and methods for improving parallel conduction in a quantum well devicePILLARISETTY RAVI·Filed 2009·Granted Dec 20, 2011·11 cites·13 claims
- 4186US9711598B2Two-dimensional condensation for uniaxially strained semiconductor finsINTEL CORP·Filed 2016·Granted Jul 18, 2017·3 cites·15 claims
- 4286US8183556B2Extreme high mobility CMOS logicDATT DOT OVER A SUMAN·Filed 2005·Granted May 22, 2012·12 cites·36 claims
- 4386US7642610B2Transistor gate electrode having conductor material layerINTEL CORP·Filed 2007·Granted Jan 5, 2010·7 cites·17 claims
- 4485US9153671B2Techniques for forming non-planar germanium quantum well devicesINTEL CORP·Filed 2013·Granted Oct 6, 2015·4 cites·20 claims
- 4585US8518768B2Extreme high mobility CMOS logicDATTA SUMAN·Filed 2012·Granted Aug 27, 2013·4 cites·7 claims
- 4684US8269209B2Isolation for nanowire devicesSHAH UDAY·Filed 2009·Granted Sep 18, 2012·7 cites·18 claims
- 4784US7638383B2Faceted catalytic dots for directed nanotube growthINTEL CORP·Filed 2006·Granted Dec 29, 2009·9 cites·18 claims
- 4883US8288233B2Method to introduce uniaxial strain in multigate nanoscale transistors by self aligned SI to SIGE conversion processes and structures formed therebyJIN BEEN-YIH·Filed 2007·Granted Oct 16, 2012·11 cites·6 claims
- 4983US8237234B2Transistor gate electrode having conductor material layerMURTHY ANAND·Filed 2011·Granted Aug 7, 2012·4 cites·24 claims
- 5083US7888221B2Tunneling field effect transistor using angled implants for forming asymmetric source/drain regionsINTEL CORP·Filed 2008·Granted Feb 15, 2011·8 cites·22 claims
Showing the top 50 of 101 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →