Inventor · disambiguated record
Beom-Jun Jin
Also filed as: JIN BEOM-JUN
21 granted patents·6 pending applications·227 citations·filing 2001–2016
95Inventor score
Top patents by PatentIndex Score
27 records- 0195US8971118B2Methods of forming non-volatile memory devices including vertical NAND stringsJIN BEOM-JUN·Filed 2014·Granted Mar 3, 2015·35 cites·19 claims
- 0294US8659946B2Non-volatile memory devices including vertical NAND strings and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Feb 25, 2014·13 cites·14 claims
- 0394US8325527B2Non-volatile memory devices including vertical NAND strings and methods of forming the sameJIN BEOM-JUN·Filed 2009·Granted Dec 4, 2012·30 cites·15 claims
- 0494US6897109B2Methods of manufacturing integrated circuit devices having contact holes using multiple insulating layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 24, 2005·92 cites·10 claims
- 0586US9373633B2Methods of forming non-volatile memory devices including vertical NAND stringsJIN BEOM-JUN·Filed 2015·Granted Jun 21, 2016·4 cites·18 claims
- 0666US7785964B2Non-volatile semiconductor memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 31, 2010·4 cites·13 claims
- 0762US6576963B2Semiconductor device having transistorSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 10, 2003·9 cites·17 claims
- 0861US6818551B2Methods of forming contact holes using multiple insulating layersSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 16, 2004·8 cites·24 claims
- 0958US9069036B2Circuit board having bypass padSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 30, 2015·0 cites·20 claims
- 1057US9627360B2Circuit board having bypass padSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 18, 2017·0 cites·20 claims
- 1157US7153750B2Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 26, 2006·7 cites·21 claims
- 1256US9449716B2Circuit board having bypass padSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 20, 2016·0 cites·30 claims
- 1356US9171644B2Circuit board having bypass padSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 27, 2015·0 cites·30 claims
- 1456US7271408B2Semiconductor device test patterns and related methods for precisely measuring leakage currents in semiconductor cell transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 18, 2007·5 cites·19 claims
- 1556US6689654B2Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact padSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 10, 2004·6 cites·23 claims
- 1655US7009257B2Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad and integrated circuit devices formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 7, 2006·5 cites·12 claims
- 1754US8917107B2Circuit board having bypass padHAN SANG-GUK·Filed 2012·Granted Dec 23, 2014·0 cites·19 claims
- 1854US6664585B2Semiconductor memory device having multilayered storage node contact plug and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 16, 2003·5 cites·10 claims
- 1952US6984568B2Semiconductor memory device having multi-layered storage node contact plug and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 10, 2006·4 cites·7 claims
- 2044US7399670B2Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formedSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 15, 2008·0 cites·19 claims
- 2142US2006019501A1Methods of forming a thin layer including hafnium silicon oxide using atomic layer deposition and methods of forming a gate structure and a capacitor including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 2241US2006013946A1Methods of forming a thin film structure, and a gate structure and a capacitor including the thin film structurePARK HONG-BAE·Filed 2005·Application pending·0 cites
- 2340US7060575B2Semiconductor device having transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 13, 2006·0 cites·21 claims
- 2440US2007063295A1Gate electrode, method of forming the same, transistor having the gate electrode, method of manufacturing the same, semiconductor device having the gate electrode and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2538US2006151826A1Semiconductor device having a barrier layer and method of manufacturing the sameJIN BEOM-JUN·Filed 2006·Application pending·0 cites
- 2637US2007032008A1MOS semiconductor devices having polysilicon gate electrodes and high dielectric constant gate dielectric layers and methods of manufacturing such devicesKIM HYE-MIN·Filed 2006·Application pending·0 cites
- 2737US2004099957A1Integrated circuit devices including low dielectric side wall spacers and methods of forming sameFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →