Inventor · disambiguated record
Benoit Mathieu
Also filed as: MATHIEU BENOIT
9 granted patents·7 citations·filing 2015–2020
78Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE8COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES1
Top patents by PatentIndex Score
9 records- 0180US10115637B2Method for fabricating auto-aligned interconnection elements for a 3D integrated circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Oct 30, 2018·3 cites·9 claims
- 0276US12140573B2Bench for mechanical characterisation of thin objectsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Nov 12, 2024·1 cites·21 claims
- 0370US10147818B2Enhanced method of stressing a transistor channel zoneCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Dec 4, 2018·2 cites·15 claims
- 0467US10586740B2Method for manufacturing pairs of CMOS transistors of the “fin-FET” type at low temperaturesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Mar 10, 2020·1 cites·13 claims
- 0557US12135260B2Bench for mechanically characterising thin objects with increased reliabilityCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Nov 5, 2024·0 cites·19 claims
- 0643US9997395B2Fabrication method of a stack of electronic devicesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jun 12, 2018·0 cites·16 claims
- 0738US12252807B2Process for obtaining a nitride layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Mar 18, 2025·0 cites·20 claims
- 0838US9786658B2Fabrication method of a stack of electronic devicesCommissariat à l'Energie Atomique et aux Energies Alternatives·Filed 2016·Granted Oct 10, 2017·0 cites·11 claims
- 0937US9853130B2Method of modifying the strain state of a semiconducting structure with stacked transistor channelsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Dec 26, 2017·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →