Inventor · disambiguated record
Beom Ho Mun
Also filed as: MUN BEOM HO
7 granted patents·5 pending applications·28 citations·filing 2012–2024
81Inventor score
Top patents by PatentIndex Score
12 records- 0196US10978458B2Semiconductor device including ultra low-k spacer and method for fabricating the sameSK HYNIX INC·Filed 2020·Granted Apr 13, 2021·5 cites·16 claims
- 0292US10672773B2Semiconductor device including ultra low-k spacer and method for fabricating the sameSK HYNIX INC·Filed 2018·Granted Jun 2, 2020·10 cites·22 claims
- 0390US10847519B2Semiconductor device having low-k spacer and method for fabricating the sameSK HYNIX INC·Filed 2018·Granted Nov 24, 2020·6 cites·20 claims
- 0487US10399291B2Smart contact lenses and smart glassesPHI BIOMED CO LTD·Filed 2016·Granted Sep 3, 2019·6 cites·21 claims
- 0574US2024413088A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 0670US2024130109A1Semiconductor device with low-k spacerSK HYNIX INC·Filed 2023·Application pending·0 cites
- 0766US11877437B2Semiconductor device with low-k spacerSK HYNIX INC·Filed 2021·Granted Jan 16, 2024·0 cites·28 claims
- 0864US11545494B2Semiconductor device having low-k spacer and converting spacer and method for fabricating the sameSK HYNIX INC·Filed 2020·Granted Jan 3, 2023·0 cites·14 claims
- 0962US2022359400A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2021·Application pending·0 cites
- 1062US2025318241A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 1159US2025046707A1Semiconductor device including tapered dielectric layer and method of forming the sameSK HYNIX INC·Filed 2023·Application pending·0 cites
- 1254US8822970B2Phase-change memory device and flexible phase-change memory device insulating nano-dotJUNG YEON SIK·Filed 2012·Granted Sep 2, 2014·1 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →