Inventor · disambiguated record
Bert R. Riemenschneider
Also filed as: RIEMENSCHNEIDER BERT R
17 granted patents·1,046 citations·filing 1986–1994
96Inventor score
Files withTEXAS INSTRUMENTS INC17
Top patents by PatentIndex Score
17 records- 0198US5168334ANon-volatile semiconductor memoryTEXAS INSTRUMENTS INC·Filed 1991·Granted Dec 1, 1992·277 cites·12 claims
- 0292US5120672AFabricating a single level merged EEPROM cell having an ONO memory stack substantially spaced from the source regionTEXAS INSTRUMENTS INC·Filed 1989·Granted Jun 9, 1992·73 cites·7 claims
- 0392US4924437AErasable programmable memory including buried diffusion source/drain lines and erase linesTEXAS INSTRUMENTS INC·Filed 1987·Granted May 8, 1990·81 cites·5 claims
- 0492US4839705AX-cell EEPROM arrayTEXAS INSTRUMENTS INC·Filed 1987·Granted Jun 13, 1989·79 cites·18 claims
- 0589US5057886ANon-volatile memory with improved coupling between gatesTEXAS INSTRUMENTS INC·Filed 1988·Granted Oct 15, 1991·59 cites·34 claims
- 0689US4827323AStacked capacitorTEXAS INSTRUMENTS INC·Filed 1988·Granted May 2, 1989·58 cites·11 claims
- 0788US4853895AEEPROM including programming electrode extending through the control gate electrodeTEXAS INSTRUMENTS INC·Filed 1987·Granted Aug 1, 1989·54 cites·15 claims
- 0888US4685197AFabricating a stacked capacitorTEXAS INSTRUMENTS INC·Filed 1986·Granted Aug 11, 1987·57 cites·10 claims
- 0983US5595922AProcess for thickening selective gate oxide regionsTEXAS INSTRUMENTS INC·Filed 1994·Granted Jan 21, 1997·55 cites·14 claims
- 1079US5143860AHigh density EPROM fabricaiton method having sidewall floating gatesTEXAS INSTRUMENTS INC·Filed 1991·Granted Sep 1, 1992·55 cites·7 claims
- 1178US4812885ACapacitive couplingTEXAS INSTRUMENTS INC·Filed 1987·Granted Mar 14, 1989·35 cites·12 claims
- 1275US5625220ASublithographic antifuseTEXAS INSTRUMENTS INC·Filed 1994·Granted Apr 29, 1997·51 cites·10 claims
- 1370US5225363ATrench capacitor DRAM cell and method of manufactureTEXAS INSTRUMENTS INC·Filed 1992·Granted Jul 6, 1993·29 cites·2 claims
- 1460US4829019AMethod for increasing source/drain to channel stop breakdown and decrease P+/N+ encroachmentTEXAS INSTRUMENTS INC·Filed 1987·Granted May 9, 1989·24 cites·4 claims
- 1559US5105245ATrench capacitor DRAM cell with diffused bit lines adjacent to a trenchTEXAS INSTRUMENTS INC·Filed 1988·Granted Apr 14, 1992·16 cites·11 claims
- 1659US4980309AMethod of making high density EEPROMTEXAS INSTRUMENTS INC·Filed 1989·Granted Dec 25, 1990·17 cites·5 claims
- 1758US5365105ASidewall anti-fuse structure and method for makingTEXAS INSTRUMENTS INC·Filed 1993·Granted Nov 15, 1994·26 cites·24 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →