Inventor · disambiguated record
Beihan Wang
Also filed as: WANG BEIHAN
3 granted patents·0 citations·filing 2020–2021
45Inventor score
Technology areasH10W
Files withYANGTZE MEMORY TECH CO LTD3
Top patents by PatentIndex Score
3 records- 0168US11792980B2Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 0263US11411014B2Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
- 0354US11195853B2Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Dec 7, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →