Inventor · disambiguated record
Bernhard Weidgans
Also filed as: WEIDGANS BERNHARD · WEIDGANS BERNHARD MARKUS
29 granted patents·4 pending applications·35 citations·filing 2012–2025
94Inventor score
Top patents by PatentIndex Score
33 records- 0188US9666546B1Multi-layer metal padsINFINEON TECHNOLOGIES AG·Filed 2016·Granted May 30, 2017·6 cites·20 claims
- 0285US9502248B1Methods for making a semiconductor chip deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Nov 22, 2016·5 cites·18 claims
- 0385US8765531B2Method for manufacturing a metal pad structure of a die, a method for manufacturing a bond pad of a chip, a die arrangement and a chip arrangementGATTERBAUER JOHANN·Filed 2012·Granted Jul 1, 2014·11 cites·23 claims
- 0482US10304782B2Compressive interlayer having a defined crack-stop edge extensionINFINEON TECHNOLOGIES AG·Filed 2017·Granted May 28, 2019·4 cites·28 claims
- 0575US9875978B2Semiconductor chip deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 23, 2018·2 cites·17 claims
- 0675US9082626B2Conductive pads and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jul 14, 2015·3 cites·19 claims
- 0766US10090265B2Semiconductor device with metal structure electrically connected to a conductive structureINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 2, 2018·1 cites·38 claims
- 0866US9293371B2Method for processing a semiconductor workpiece with metallizationINFINEON TECHNOLOGIES AG·Filed 2015·Granted Mar 22, 2016·1 cites·8 claims
- 0965US11776927B2Semiconductor device including a solder compound containing a compound Sn/SbINFINEON TECHNOLOGIES AG·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 1064US9093385B2Method for processing a semiconductor workpiece with metallizationINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jul 28, 2015·1 cites·26 claims
- 1163US12456700B2Semiconductor die having an optical detection marker and method of producing the semiconductor dieINFINEON TECHNOLOGIES AG·Filed 2022·Granted Oct 28, 2025·0 cites·20 claims
- 1263US10607972B2Semiconductor devices for integration with light emitting chips and modules thereofINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 31, 2020·0 cites·14 claims
- 1362US9209080B2Semiconductor device comprising a protective structure on a chip backside and method of producing the sameINFINEON TECHNOLOGIES AG·Filed 2012·Granted Dec 8, 2015·1 cites·33 claims
- 1457US10651140B2Semiconductor device with metal structure electrically connected to a conductive structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted May 12, 2020·0 cites·20 claims
- 1556US11069644B2Semiconductor device including a solder compound containing a compound Sn/SbINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 20, 2021·0 cites·16 claims
- 1656US9966368B2Semiconductor devices for integration with light emitting chips and modules thereofINFINEON TECHNOLOGIES AG·Filed 2017·Granted May 8, 2018·0 cites·18 claims
- 1754US9704839B2Semiconductor devices for integration with light emitting chips and modules thereofINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jul 11, 2017·0 cites·27 claims
- 1853US10700019B2Semiconductor device with compressive interlayerINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 30, 2020·0 cites·27 claims
- 1953US10648096B2Electrolyte, method of forming a copper layer and method of forming a chipINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 12, 2020·0 cites·20 claims
- 2052US10049994B2Contact pads with sidewall spacers and method of making contact pads with sidewall spacersINFINEON TECHNOLOGIES AG·Filed 2014·Granted Aug 14, 2018·0 cites·23 claims
- 2152US2023178696A1Optoelectronic assemblyINFINEON TECHNOLOGIES AG·Filed 2021·Application pending·0 cites
- 2251US11164830B2Semiconductor chip and method of processing a semiconductor chipINFINEON TECHNOLOGIES AG·Filed 2018·Granted Nov 2, 2021·0 cites·17 claims
- 2351US9887170B2Multi-layer metal padsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 6, 2018·0 cites·23 claims
- 2449US11424201B2Method of forming an aluminum oxide layer, metal surface with aluminum oxide layer, and electronic deviceINFINEON TECHNOLOGIES AG·Filed 2018·Granted Aug 23, 2022·0 cites·13 claims
- 2549US8822327B2Contact pads with sidewall spacers and method of making contact pads with sidewall spacersGATTERBAUER JOHANN·Filed 2012·Granted Sep 2, 2014·0 cites·10 claims
- 2648US9362216B2Conductive pads and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jun 7, 2016·0 cites·22 claims
- 2748US2014117509A1Metal Deposition with Reduced StressINFINEON TECHNOLOGIES AG·Filed 2012·Application pending·0 cites
- 2846US11276624B2Semiconductor device power metallization layer with stress-relieving heat sink structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Mar 15, 2022·0 cites·13 claims
- 2946US2025253280A1Sinterable electrical contact on a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 3045US10134697B2Semiconductor chip and method of processing a semiconductor chipINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 20, 2018·0 cites·11 claims
- 3144US2015235855A1Metal Deposition with Reduced StressINFINEON TECHNOLOGIES AG·Filed 2015·Application pending·0 cites
- 3243US11127693B2Barrier for power metallization in semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2019·Granted Sep 21, 2021·0 cites·20 claims
- 3339US9627335B2Method for processing a semiconductor workpiece and semiconductor workpieceINFINEON TECHNOLOGIES AG·Filed 2014·Granted Apr 18, 2017·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →