Inventor · disambiguated record
Beichao Zhang
Also filed as: ZHANG BEICHAO
6 granted patents·3 pending applications·54 citations·filing 2000–2008
81Inventor score
Files withCHARTERED SEMICONDUCTOR MFG9
Top patents by PatentIndex Score
9 records- 0179US7601607B2Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Oct 13, 2009·8 cites·28 claims
- 0273US7045455B2Via electromigration improvement by changing the via bottom geometric profileCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted May 16, 2006·17 cites·14 claims
- 0371US7670946B2Methods to eliminate contact plug sidewall slitCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Mar 2, 2010·4 cites·29 claims
- 0471US6653227B1Method of cobalt silicidation using an oxide-Titanium interlayerCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Nov 25, 2003·21 cites·21 claims
- 0549US7153766B2Metal barrier cap fabrication by polymer lift-offCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Dec 26, 2006·4 cites·20 claims
- 0645US7323408B2Metal barrier cap fabrication by polymer lift-offCHARTERED SEMICONDUCTOR MFG·Filed 2005·Granted Jan 29, 2008·0 cites·17 claims
- 0745US2009315115A1Implantation for shallow trench isolation (STI) formation and for stress for transistor performance enhancementCHARTERED SEMICONDUCTOR MFG·Filed 2008·Application pending·0 cites
- 0843US2005191851A1Barrier metal cap structure on copper lines and viasCHARTERED SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 0937US2004048468A1Barrier metal cap structure on copper lines and viasCHARTERED SEMICONDUCTOR MFG·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →