Inventor · disambiguated record
Bernd Zippelius
Also filed as: ZIPPELIUS BERND · ZIPPELIUS BERND LEONHARD
15 granted patents·6 pending applications·37 citations·filing 2013–2025
89Inventor score
Files withINFINEON TECHNOLOGIES AG21
Top patents by PatentIndex Score
21 records- 0194US10211306B2Semiconductor device with diode region and trench gate structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 19, 2019·15 cites·21 claims
- 0293US10586845B1SiC trench transistor device and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 10, 2020·9 cites·25 claims
- 0390US11552173B2Silicon carbide device with trench gateINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 10, 2023·2 cites·26 claims
- 0482US12266694B2Silicon carbide device with a stripe-shaped trench gate structureINFINEON TECHNOLOGIES AG·Filed 2023·Granted Apr 1, 2025·0 cites·27 claims
- 0580US9245944B2Silicon carbide device and a method for manufacturing a silicon carbide deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jan 26, 2016·5 cites·22 claims
- 0679US10700182B2Semiconductor device with transistor cells and a drift structure and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 30, 2020·2 cites·26 claims
- 0777US2025203986A1Silicon carbide device with a stripe-shaped trench gate structureINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 0876US11888032B2Method of producing a silicon carbide device with a trench gateINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jan 30, 2024·0 cites·20 claims
- 0972US11145755B2Silicon carbide semiconductor component with edge termination structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Oct 12, 2021·1 cites·20 claims
- 1071US10985248B2SiC power semiconductor device with integrated Schottky junctionINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 20, 2021·1 cites·20 claims
- 1171US10861964B2Semiconductor device with junction termination zoneINFINEON TECHNOLOGIES AG·Filed 2018·Granted Dec 8, 2020·1 cites·16 claims
- 1269US11462611B2SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Oct 4, 2022·0 cites·15 claims
- 1366US10896952B2SiC device and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 19, 2021·0 cites·16 claims
- 1464US11211303B2Semiconductor device including a passivation structure and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2019·Granted Dec 28, 2021·1 cites·25 claims
- 1563US2025096149A1Semiconductor device with a silicon carbide portion and a glass structure and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1656US2024072122A1Semiconductor device and method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 1754US2025324714A1Silicon carbide device with trench gateINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 1850US10541325B2Semiconductor device with termination structure including field zones and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jan 21, 2020·0 cites·28 claims
- 1947US2017345905A1Wide-Bandgap Semiconductor Device with Trench Gate StructuresINFINEON TECHNOLOGIES AG·Filed 2016·Application pending·0 cites
- 2043US11063144B2Silicon carbide semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 13, 2021·0 cites·12 claims
- 2143US2020006544A1Semiconductor device including silicon carbide body and transistor cellsINFINEON TECHNOLOGIES AG·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →