Inventor · disambiguated record
Bi-Shen Lee
Also filed as: LEE BI-SHEN
28 granted patents·19 pending applications·16 citations·filing 2018–2025
93Inventor score
Top patents by PatentIndex Score
47 records- 0196US12127483B2Doped sidewall spacer/etch stop layer for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 22, 2024·2 cites·20 claims
- 0296US11844226B2FeRAM with laminated ferroelectric film and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·2 cites·20 claims
- 0395US11430951B2Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·3 cites·20 claims
- 0493US11404638B2Multi-doped data storage structure configured to improve resistive memory cell performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
- 0591US11527713B2Top electrode via with low contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·3 cites·20 claims
- 0688US12364171B2Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 0787US2025365979A1Ferroelectric random access memory device with seed layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0886US12137572B2Ferroelectric memory device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 5, 2024·1 cites·20 claims
- 0986US11527717B2Resistive memory cell having a low forming voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·2 cites·20 claims
- 1085US2025311645A1Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1185US2025048645A1Wakeup free approach to improve the ferroelectricity of feram using a stressor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1284US2025294776A1FeRAM WITH LAMINATED FERROELECTRIC FILM AND METHOD FORMING SAMETAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1383US12356631B2FeRAM with laminated ferroelectric film and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 1482US2025318143A1Ferroelectric Memory Device and Method of Manufacturing the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1581US2025331319A1Deep trench isolation structure and methods for fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1681US2025318439A1Doped sidewall spacer/etch stop layer for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1780US12160995B2Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 1880US11895933B2Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 1980US2024373760A1Doped sidewall spacer/etch stop layer for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2079US12349366B2Interface film to mitigate size effect of memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 2179US12239035B2Resistive memory cell having a low forming voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
- 2279US12232434B2Multi-doped data storage structure configured to improve resistive memory cell performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 18, 2025·0 cites·20 claims
- 2378US2024381663A1Interface film to mitigate size effect of memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2478US2024381664A1Ferroelectric Memory Device and Method of Manufacturing the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2577US12075626B2Memory window of MFM MOSFET for small cell sizeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 2677US2025241211A1Memory device with improved performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2777US2024357835A1Improve memory window of mfm mosfet for small cell sizeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2876US2024334709A1Ferroelectric random access memory device with seed layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2974US12408448B2Deep trench isolation structure and methods for fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 3074US12295270B2RRAM device with improved performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 6, 2025·0 cites·20 claims
- 3174US12295267B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 6, 2025·0 cites·20 claims
- 3273US12069867B2Ferroelectric random access memory device with seed layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 3373US2025176447A1Resistive memory cell having a low forming voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3471US11665909B2FeRAM with laminated ferroelectric film and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 30, 2023·0 cites·20 claims
- 3571US2025151635A1Multi-doped data storage structure configured to improve resistive memory cell performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3669US2025234790A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3768US12035537B2Interface film to mitigate size effect of memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 9, 2024·0 cites·20 claims
- 3868US11737280B2Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 3968US11723212B2Memory window of MFM MOSFET for small cell sizeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 4064US11165021B2RRAM device with improved performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 2, 2021·0 cites·20 claims
- 4161US11967611B2Multilayer structure, capacitor structure and electronic deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 23, 2024·0 cites·20 claims
- 4261US11916127B2Multi-layer electrode to improve performance of ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·0 cites·20 claims
- 4360US10520363B2Raman detecting chip for thin layer chromatography and method for separating and detecting an analyteIND TECH RES INST·Filed 2018·Granted Dec 31, 2019·0 cites·9 claims
- 4459US2025311247A1Dielectric stack of mim capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4559US2025287618A1Capacitor, integrated circuit, and manufacturing method of integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4658US2025014984A1Capacitor structure including work function metal layers and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4753US11393833B2Ferroelectric random access memory device with seed layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →