Inventor · disambiguated record
Binghan Li
Also filed as: LI BINGHAN
6 granted patents·4 pending applications·6 citations·filing 2012–2023
69Inventor score
Top patents by PatentIndex Score
10 records- 0174US8778761B2Method of manufacturing semiconductor deviceGRACE SEMICONDUCTOR MFG CORP·Filed 2013·Granted Jul 15, 2014·5 cites·14 claims
- 0258US9831354B2Split-gate flash memory having mirror structure and method for forming the sameSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2015·Granted Nov 28, 2017·1 cites·6 claims
- 0352US2023337425A1Memory Structure And Method For Forming The SameSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2023·Application pending·0 cites
- 0449US2023354598A1Memory and Method for Forming the SameSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2023·Application pending·0 cites
- 0545US11728438B2Split-gate memory device and method of forming sameSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2021·Granted Aug 15, 2023·0 cites·9 claims
- 0642US9406685B2Flash memory unit and memory array, and programming, erasing and reading method thereofSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2014·Granted Aug 2, 2016·0 cites·7 claims
- 0740US9019740B2Memory and method of operating the sameGRACE SEMICONDUCTOR MFG CORP·Filed 2012·Granted Apr 28, 2015·0 cites·17 claims
- 0840US2021358927A1Memory And Method For Forming The SameSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2020·Application pending·0 cites
- 0937US2015255124A1Electrically erasable programmable read-only memory and storage array of the sameSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2014·Application pending·0 cites
- 1035US10411138B2Flash memory structure, memory array and fabrication method thereofSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2017·Granted Sep 10, 2019·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →