Inventor · disambiguated record
Bich-Yen Nguyen
Also filed as: NGUYEN BICH Y · NGUYEN BICH-YEN
135 granted patents·17 pending applications·5,527 citations·filing 1986–2024
99Inventor score
Files withFREESCALE SEMICONDUCTOR INC59MOTOROLA INC41SOITEC SILICON ON INSULATOR26NGUYEN BICH-YEN8MAZURE CARLOS6
Top patents by PatentIndex Score
152 records- 0198US6838322B2Method for forming a double-gated semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jan 4, 2005·259 cites·21 claims
- 0298US6297095B1Memory device that includes passivated nanoclusters and method for manufactureMOTOROLA INC·Filed 2000·Granted Oct 2, 2001·284 cites·17 claims
- 0398US6184072B1Process for forming a high-K gate dielectricMOTOROLA INC·Filed 2000·Granted Feb 6, 2001·224 cites·2 claims
- 0497US7282402B2Method of making a dual strained channel semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Oct 16, 2007·69 cites·19 claims
- 0597US7226833B2Semiconductor device structure and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 5, 2007·124 cites·18 claims
- 0697US6541280B2High K dielectric filmMOTOROLA INC·Filed 2001·Granted Apr 1, 2003·190 cites·19 claims
- 0796US7575968B2Inverse slope isolation and dual surface orientation integrationFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 18, 2009·533 cites·21 claims
- 0896US7494856B2Semiconductor fabrication process using etch stop layer to optimize formation of source/drain stressorFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Feb 24, 2009·51 cites·20 claims
- 0996US6362071B1Method for forming a semiconductor device with an opening in a dielectric layerMOTOROLA INC·Filed 2000·Granted Mar 26, 2002·149 cites·20 claims
- 1096US4987102AProcess for forming high purity thin filmsMOTOROLA INC·Filed 1989·Granted Jan 22, 1991·432 cites·20 claims
- 1195US9576798B2Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layersSOITEC SILICON ON INSULATOR·Filed 2015·Granted Feb 21, 2017·11 cites·26 claims
- 1295US7018901B1Method for forming a semiconductor device having a strained channel and a heterojunction source/drainFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Mar 28, 2006·105 cites·24 claims
- 1395US6413819B1Memory device and method for using prefabricated isolated storage elementsMOTOROLA INC·Filed 2000·Granted Jul 2, 2002·128 cites·21 claims
- 1494US9209301B1Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layersSOITEC SILICON ON INSULATOR·Filed 2014·Granted Dec 8, 2015·14 cites·16 claims
- 1594US7585735B2Asymmetric spacers and asymmetric source/drain extension layersFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 8, 2009·33 cites·18 claims
- 1694US6831350B1Semiconductor structure with different lattice constant materials and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Dec 14, 2004·89 cites·21 claims
- 1794US6444512B1Dual metal gate transistors for CMOS processMOTOROLA INC·Filed 2000·Granted Sep 3, 2002·96 cites·34 claims
- 1894US6344403B1Memory device and method for manufactureMOTOROLA INC·Filed 2000·Granted Feb 5, 2002·142 cites·7 claims
- 1994US4890144AIntegrated circuit trench cellMOTOROLA INC·Filed 1987·Granted Dec 26, 1989·140 cites·19 claims
- 2093US8842945B2Methods of forming three dimensionally integrated semiconductor systems including photoactive devices and semiconductor-on-insulator substratesNGUYEN BICH-YEN·Filed 2011·Granted Sep 23, 2014·16 cites·17 claims
- 2193US7575975B2Method for forming a planar and vertical semiconductor structure having a strained semiconductor layerFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 18, 2009·34 cites·17 claims
- 2293US7226820B2Transistor fabrication using double etch/refill processFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jun 5, 2007·34 cites·20 claims
- 2393US6770923B2High K dielectric filmFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Aug 3, 2004·115 cites·22 claims
- 2493US6518106B2Semiconductor device and a method thereforMOTOROLA INC·Filed 2001·Granted Feb 11, 2003·100 cites·12 claims
- 2593US6518634B1Strontium nitride or strontium oxynitride gate dielectricMOTOROLA INC·Filed 2000·Granted Feb 11, 2003·79 cites·8 claims
- 2693US5219793AMethod for forming pitch independent contacts and a semiconductor device having the sameMOTOROLA INC·Filed 1991·Granted Jun 15, 1993·149 cites·24 claims
- 2792US8652887B2Multi-layer structures and process for fabricating semiconductor devicesNGUYEN BICH-YEN·Filed 2012·Granted Feb 18, 2014·14 cites·20 claims
- 2892US7524707B2Modified hybrid orientation technologyFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 28, 2009·19 cites·15 claims
- 2992US7091071B2Semiconductor fabrication process including recessed source/drain regions in an SOI waferFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 15, 2006·22 cites·20 claims
- 3092US5897343AMethod of making a power switching trench MOSFET having aligned source regionsMOTOROLA INC·Filed 1998·Granted Apr 27, 1999·119 cites·7 claims
- 3191US9219150B1Method for fabricating semiconductor structures including fin structures with different strain states, and related semiconductor structuresSOITEC SILICON ON INSULATOR·Filed 2014·Granted Dec 22, 2015·9 cites·18 claims
- 3291US7446026B2Method of forming a CMOS device with stressor source/drain regionsFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Nov 4, 2008·29 cites·8 claims
- 3390US9293448B2Methods of forming three-dimensionally integrated semiconductor systems including photoactive devices and semiconductor-on-insulator substratesSOITEC SILICON ON INSULATOR·Filed 2014·Granted Mar 22, 2016·9 cites·24 claims
- 3490US9165945B1Method for fabricating semiconductor structures including transistor channels having different strain states, and related semiconductor structuresSOITEC SILICON ON INSULATOR·Filed 2014·Granted Oct 20, 2015·8 cites·13 claims
- 3590US7238561B2Method for forming uniaxially strained devicesFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 3, 2007·25 cites·19 claims
- 3690US5639687AMethod for forming an integrated circuit pattern on a semiconductor substrate using silicon-rich silicon nitrideMOTOROLA INC·Filed 1996·Granted Jun 17, 1997·90 cites·20 claims
- 3789US8575697B2SRAM-type memory cellMAZURE CARLOS·Filed 2011·Granted Nov 5, 2013·13 cites·12 claims
- 3889US7803670B2Twisted dual-substrate orientation (DSO) substratesFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Sep 28, 2010·19 cites·19 claims
- 3989US5262352AMethod for forming an interconnection structure for conductive layersMOTOROLA INC·Filed 1992·Granted Nov 16, 1993·92 cites·20 claims
- 4088US8058158B2Hybrid semiconductor substrate including semiconductor-on-insulator region and method of making the sameBOURDELLE KONSTANTIN·Filed 2010·Granted Nov 15, 2011·10 cites·18 claims
- 4188US7414877B2Electronic device including a static-random-access memory cell and a process of forming the electronic deviceFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Aug 19, 2008·16 cites·20 claims
- 4288US7230264B2Semiconductor transistor having structural elements of differing materialsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jun 12, 2007·14 cites·10 claims
- 4388US6794281B2Dual metal gate transistors for CMOS processFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Sep 21, 2004·47 cites·18 claims
- 4488US5510278AMethod for forming a thin film transistorMOTOROLA INC·Filed 1994·Granted Apr 23, 1996·67 cites·13 claims
- 4588US5408130AInterconnection structure for conductive layersMOTOROLA INC·Filed 1994·Granted Apr 18, 1995·86 cites·18 claims
- 4688US4693781ATrench formation processMOTOROLA INC·Filed 1986·Granted Sep 15, 1987·73 cites·14 claims
- 4787US8309410B2Power MOSFET with a gate structure of different materialPHAM DANIEL T·Filed 2011·Granted Nov 13, 2012·9 cites·20 claims
- 4887US7265004B2Electronic devices including a semiconductor layer and a process for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 4, 2007·15 cites·14 claims
- 4987US7067868B2Double gate device having a heterojunction source/drain and strained channelFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 27, 2006·39 cites·17 claims
- 5086US7943988B2Power MOSFET with a gate structure of different materialFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted May 17, 2011·11 cites·21 claims
Showing the top 50 of 152 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →