Inventor · disambiguated record
Bi-Fen Wu
Also filed as: WU BI-FEN
8 granted patents·2 pending applications·23 citations·filing 2012–2025
83Inventor score
Top patents by PatentIndex Score
10 records- 0194US10319832B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 11, 2019·9 cites·20 claims
- 0291US10522653B2Gate spacer structure of FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·5 cites·20 claims
- 0390US11018242B2Gate spacer structure of FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 25, 2021·2 cites·20 claims
- 0484US10811517B2Gate spacer structure of finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 20, 2020·2 cites·20 claims
- 0577US12237393B2Method of fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
- 0676US8969922B2Field effect transistors and method of forming the sameLIU CHIA-CHU·Filed 2012·Granted Mar 3, 2015·5 cites·17 claims
- 0772US11810963B2Gate spacer structure of FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 0872US2025169155A1Method of fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0969US2025359135A1Gates of Hybrid-Fin DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1066US11417748B2Semiconductor device and method of fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →