Inventor · disambiguated record
Bin Yu
Also filed as: YU BIN
637 granted patents·109 pending applications·21,683 citations·filing 1995–2025
99Inventor score
Files withADVANCED MICRO DEVICES INC291SAMSUNG ELECTRONICS CO LTD195HONEYWELL INT INC28HUAWEI TECH CO LTD21HAO PENG11
Top patents by PatentIndex Score
746 records- 0199US6921963B2Narrow fin FinFETADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 26, 2005·273 cites·10 claims
- 0299US6835618B1Epitaxially grown fin for FinFETADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 28, 2004·229 cites·15 claims
- 0399US6764884B1Method for forming a gate in a FinFET device and thinning a fin in a channel region of the FinFET deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 20, 2004·244 cites·20 claims
- 0499US6706571B1Method for forming multiple structures in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 16, 2004·836 cites·19 claims
- 0599US6682973B1Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applicationsADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 27, 2004·595 cites·18 claims
- 0699US6646307B1MOSFET having a double gateADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 11, 2003·1.5k cites·18 claims
- 0799US6645797B1Method for forming fins in a FinFET device using sacrificial carbon layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 11, 2003·273 cites·20 claims
- 0899US6611029B1Double gate semiconductor device having separate gatesADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 26, 2003·264 cites·15 claims
- 0999US6475869B1Method of forming a double gate transistor having an epitaxial silicon/germanium channel regionADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 5, 2002·765 cites·20 claims
- 1099US6429484B1Multiple active layer structure and a method of making such a structureADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 6, 2002·373 cites·20 claims
- 1198US11864122B2Method and device for uplink power controlSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 2, 2024·7 cites·12 claims
- 1298US11653319B2Base station, terminal, random access preamble detection method and random access channel configuration methodSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 16, 2023·5 cites·12 claims
- 1398US11405145B2Method and apparatus for transmitting and receiving signal in a communication systemSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 2, 2022·11 cites·15 claims
- 1498US6872647B1Method for forming multiple fins in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 29, 2005·186 cites·20 claims
- 1598US6803631B2Strained channel finfetADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 12, 2004·152 cites·30 claims
- 1698US6762448B1FinFET device with multiple fin structuresADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 13, 2004·168 cites·9 claims
- 1798US6709982B1Double spacer FinFET formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 23, 2004·272 cites·17 claims
- 1898US6693333B1Semiconductor-on-insulator circuit with multiple work functionsADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 17, 2004·212 cites·19 claims
- 1998US6657276B1Shallow trench isolation (STI) region with high-K liner and method of formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 2, 2003·198 cites·10 claims
- 2098US6562665B1Fabrication of a field effect transistor with a recess in a semiconductor pillar in SOI technologyADVANCED MICRO DEVICES INC·Filed 2000·Granted May 13, 2003·333 cites·16 claims
- 2198US6475890B1Fabrication of a field effect transistor with an upside down T-shaped semiconductor pillar in SOI technologyADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 5, 2002·271 cites·14 claims
- 2298US6458662B1Method of fabricating a semiconductor device having an asymmetrical dual-gate silicon-germanium (SiGe) channel MOSFET and a device thereby formedADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 1, 2002·256 cites·19 claims
- 2398US6391753B1Process for forming gate conductorsADVANCED MICRO DEVICES INC·Filed 2000·Granted May 21, 2002·212 cites·20 claims
- 2498US6312995B1MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integrationADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 6, 2001·274 cites·10 claims
- 2597US12074752B2Method and apparatus for transmitting and receiving data in a wireless communication systemSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 27, 2024·7 cites·14 claims
- 2697US12010629B2Method and device for uplink power controlSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 11, 2024·3 cites·12 claims
- 2797US11902028B2Method and apparatus for transmitting and receiving signal in a communication systemSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 13, 2024·6 cites·20 claims
- 2897US11206693B2Method and apparatus for transmitting and receiving a signal in a wireless communication systemSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 21, 2021·6 cites·10 claims
- 2997US9363282B1Platforms for implementing an analytics framework for DNS securityINFOBLOX INC·Filed 2014·Granted Jun 7, 2016·90 cites·18 claims
- 3097US6897527B2Strained channel FinFETADVANCED MICRO DEVICES INC·Filed 2004·Granted May 24, 2005·118 cites·28 claims
- 3197US6833588B2Semiconductor device having a U-shaped gate structureADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 21, 2004·116 cites·14 claims
- 3297US6800885B1Asymmetrical double gate or all-around gate MOSFET devices and methods for making sameADVANCE MICRO DEVICES INC·Filed 2003·Granted Oct 5, 2004·151 cites·8 claims
- 3397US6787424B1Fully depleted SOI transistor with elevated source and drainADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 7, 2004·155 cites·20 claims
- 3497US6784101B1Formation of high-k gate dielectric layers for MOS devices fabricated on strained lattice semiconductor substrates with minimized stress relaxationADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 31, 2004·205 cites·20 claims
- 3597US6716690B1Uniformly doped source/drain junction in a double-gate MOSFETADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 6, 2004·137 cites·20 claims
- 3697US6689671B1Low temperature solid-phase epitaxy fabrication process for MOS devices built on strained semiconductor substrateADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 10, 2004·145 cites·12 claims
- 3797US6686231B1Damascene gate process with sacrificial oxide in semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 3, 2004·116 cites·20 claims
- 3897US6670260B1Transistor with local insulator structureADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 30, 2003·124 cites·20 claims
- 3997US6551885B1Low temperature process for a thin film transistorADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 22, 2003·169 cites·20 claims
- 4097US6552377B1Mos transistor with dual metal gate structureADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 22, 2003·146 cites·6 claims
- 4197US6534373B1MOS transistor with reduced floating body effectADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 18, 2003·150 cites·20 claims
- 4297US6528858B1MOSFETs with differing gate dielectrics and method of formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 4, 2003·162 cites·31 claims
- 4397US6504214B1MOSFET device having high-K dielectric layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 7, 2003·160 cites·8 claims
- 4497US6410371B1Method of fabrication of semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layerADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 25, 2002·163 cites·13 claims
- 4597US6391782B1Process for forming multiple active lines and gate-all-around MOSFETADVANCED MICRO DEVICES INC·Filed 2000·Granted May 21, 2002·188 cites·20 claims
- 4697US6066533AMOS transistor with dual metal gate structureADVANCED MICRO DEVICES INC·Filed 1998·Granted May 23, 2000·196 cites·7 claims
- 4796US11736213B2Transmission method of physical signal, terminal and base stationSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 22, 2023·6 cites·15 claims
- 4896US10985825B2Methods for transmitting uplink signal and downlink signal, UE and base stationSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 20, 2021·9 cites·20 claims
- 4996US6855583B1Method for forming tri-gate FinFET with mesa isolationADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 15, 2005·126 cites·19 claims
- 5096US6787402B1Double-gate vertical MOSFET transistor and fabrication methodADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 7, 2004·130 cites·10 claims
Showing the top 50 of 746 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →