Inventor · disambiguated record
Binjian Zeng
Also filed as: ZENG BINJIAN
2 granted patents·0 citations·filing 2021–2021
20Inventor score
Files withUNIV XIANGTAN2
Top patents by PatentIndex Score
2 records- 0141US11502083B2Hafnium oxide-based ferroelectric field effect transistor and manufacturing method thereofUNIV XIANGTAN·Filed 2021·Granted Nov 15, 2022·0 cites·5 claims
- 0240US11996454B2Gate-last ferroelectric field effect transistor and manufacturing method thereofUNIV XIANGTAN·Filed 2021·Granted May 28, 2024·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →