Inventor · disambiguated record
Blandine Duriez
Also filed as: DURIEZ BLANDINE
77 granted patents·10 pending applications·271 citations·filing 2011–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD72TAIWAN SEMICONDUCTOR MFG3COMMISSARIAT ENERGIE ATOMIQUE2GRIDELET EVELYNE2NXP BV2
Top patents by PatentIndex Score
87 records- 0199US9520466B2Vertical gate-all-around field effect transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 13, 2016·130 cites·20 claims
- 0297US9991169B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 5, 2018·15 cites·21 claims
- 0397US9711608B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·21 cites·20 claims
- 0497US9349860B1Field effect transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 24, 2016·18 cites·20 claims
- 0594US10276719B1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·7 cites·20 claims
- 0693US11069813B2Localized heating in laser annealing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·6 cites·20 claims
- 0793US9653288B1Method of forming ultra-thin nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 16, 2017·7 cites·19 claims
- 0892US11594603B2Multigate device having reduced contact resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·2 cites·20 claims
- 0992US9768252B2Vertical gate-all-around field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·6 cites·20 claims
- 1092US8987835B2FinFET with a buried semiconductor material between two finsVELLIANITIS GEORGIOS·Filed 2012·Granted Mar 24, 2015·11 cites·20 claims
- 1190US11430512B2Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 30, 2022·2 cites·20 claims
- 1290US9412871B2FinFET with channel backside passivation layer device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 9, 2016·11 cites·15 claims
- 1388US11587786B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·1 cites·20 claims
- 1488US9558942B1High density nanowire arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·5 cites·20 claims
- 1588US8779554B2MOSFETs with channels on nothing and methods for forming the sameVELLIANITIS GEORGIOS·Filed 2012·Granted Jul 15, 2014·5 cites·18 claims
- 1687US9443729B1Method for forming FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 13, 2016·4 cites·20 claims
- 1786US11672110B2Heterostructure oxide semiconductor vertical gate-all-around (VGAA) transistor and methods for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·1 cites·20 claims
- 1884US11309417B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 19, 2022·2 cites·20 claims
- 1984US2025098515A1Method of forming semiconductor device having carbon nanotubeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2083US12490456B2Multigate device having reduced contact resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 2, 2025·0 cites·20 claims
- 2182US12051702B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·0 cites·20 claims
- 2282US10847622B2Method of forming source/drain structure with first and second epitaxial layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·2 cites·20 claims
- 2382US10332965B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 25, 2019·2 cites·20 claims
- 2482US10121858B2Elongated semiconductor structure planarizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 6, 2018·3 cites·17 claims
- 2581US2023387306A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG COMPNAY LTD·Filed 2023·Application pending·0 cites
- 2679US12080771B2Multigate device having reduced contact resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 2779US10991576B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·1 cites·20 claims
- 2878US11830947B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 2978US11271163B2Method of forming semiconductor device having carbon nanotubeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 8, 2022·0 cites·19 claims
- 3077US2024204106A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3176US12193318B2Method of forming semiconductor device having carbon nanotubeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 3276US11949020B2Transistor, integrated circuit, and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 3376US2024379863A1Raised source/drain oxide semiconducting thin film transistor and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3475US12027592B2Method of manufacturing a heterostructure or a stacked semiconductor structure having a silicon-germanium interfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 3575US10510853B2FinFET with two fins on STITAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 3675US2023361202A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3774US11949013B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 3874US11764289B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·0 cites·20 claims
- 3973US12238914B2Heterostructure oxide semiconductor vertical gate-all-around (VGAA) transistor and methods for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 4073US11848385B2Localized protection layer for laser annealing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 4173US9978834B2Method of forming ultra-thin nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 22, 2018·1 cites·20 claims
- 4272US2023387314A1Raised source/drain oxide semiconducting thin film transistor and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4370US11374095B2GE based semiconductor device and a method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
- 4469US9502541B2Forming fins on the sidewalls of a sacrificial fin to form a FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·1 cites·20 claims
- 4569US2025159862A1Heterostructure oxide semiconductor vertical gate-all-around (vgaa) transistor and methods for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4668US11557678B2Transistor, integrated circuit, and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 17, 2023·0 cites·20 claims
- 4768US11239368B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
- 4868US9564317B1Method of forming a nanowireTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·1 cites·20 claims
- 4966US11967647B2Localized heating in laser annealing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 23, 2024·0 cites·20 claims
- 5066US11942147B2Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →