Inventor · disambiguated record
Boris N. Feigelson
Also filed as: FEIGELSON BORIS · FEIGELSON BORIS N
23 granted patents·10 pending applications·65 citations·filing 2005–2025
93Inventor score
Top patents by PatentIndex Score
33 records- 0196US11201058B2GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the sameUS GOV SEC NAVY·Filed 2020·Granted Dec 14, 2021·6 cites·8 claims
- 0293US9543168B2Defects annealing and impurities activation in semiconductors at thermodynamically non-stable conditionsUS NAVY·Filed 2016·Granted Jan 10, 2017·11 cites·30 claims
- 0392US12114569B2Thermoelectric nanocomposite materialsUS GOV SEC NAVY·Filed 2022·Granted Oct 8, 2024·2 cites·12 claims
- 0492US11944011B2Thermoelectric nanocomposite materialsUS GOV SEC NAVY·Filed 2022·Granted Mar 26, 2024·2 cites·20 claims
- 0591US8518808B2Defects annealing and impurities activation in III-nitride compoundFEIGELSON BORIS N·Filed 2011·Granted Aug 27, 2013·17 cites·37 claims
- 0688US11532478B2GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the sameUS GOV SEC NAVY·Filed 2021·Granted Dec 20, 2022·1 cites·18 claims
- 0788US10513462B2Transparent nanocomposite ceramics built from core/shell nanoparticlesUS GOV SEC NAVY·Filed 2016·Granted Dec 24, 2019·5 cites·23 claims
- 0888US10497530B2Thermionic tungsten/scandate cathodes and methods of making the sameUS GOV SEC NAVY·Filed 2016·Granted Dec 3, 2019·8 cites·14 claims
- 0987US11075049B2Thermionic tungsten/scandate cathodes and method of making the sameUS GOV SEC NAVY·Filed 2019·Granted Jul 27, 2021·3 cites·24 claims
- 1083US8679248B2GaN whiskers and methods of growing them from solutionFEIGELSON BORIS N·Filed 2010·Granted Mar 25, 2014·2 cites·9 claims
- 1180US11817318B2GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the sameUS GOV SEC NAVY·Filed 2023·Granted Nov 14, 2023·0 cites·9 claims
- 1278US10751801B2Bulk monolithic nano-heterostructures and method of making the sameFEIGELSON BORIS N·Filed 2014·Granted Aug 25, 2020·3 cites·20 claims
- 1374US2025215609A1Methods of Forming Bipolar Nanocomposite Semiconductor MaterialsUS GOV SEC NAVY·Filed 2025·Application pending·0 cites
- 1473US9129799B2Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphologyMAHADIK NADEEMULLAH A·Filed 2014·Granted Sep 8, 2015·4 cites·12 claims
- 1572US12247316B2Bipolar nanocomposite semiconductorsUS GOV SEC NAVY·Filed 2022·Granted Mar 11, 2025·0 cites·15 claims
- 1671US12281409B2Bipolar nanocomposite semiconductorsUS GOV SEC NAVY·Filed 2022·Granted Apr 22, 2025·0 cites·10 claims
- 1771US2022254639A1GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabricating Devices Incorporating the SameUS GOV SEC NAVY·Filed 2022·Application pending·0 cites
- 1869US10854457B2Implanted dopant activation for wide bandgap semiconductor electronicsUS GOV SEC NAVY·Filed 2019·Granted Dec 1, 2020·1 cites·25 claims
- 1967US8999060B2Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperatureFEIGELSON BORIS N·Filed 2013·Granted Apr 7, 2015·0 cites·9 claims
- 2065US2025183038A1Methods of Forming WBG and UWBG Semiconductors with P- and N-type ConductivityUS GOV SEC NAVY·Filed 2025·Application pending·0 cites
- 2164US10562784B2Nanocrystalline alpha alumina and method for making the sameUS GOV SEC NAVY·Filed 2019·Granted Feb 18, 2020·0 cites·6 claims
- 2264US2025346996A1Temperature Cycling Method for Atomic Layer Deposition on High-Aspect-Ratio and High-Surface-Area SubstratesUS GOV SEC NAVY·Filed 2024·Application pending·0 cites
- 2363US12237169B2WBG and UWBG semiconductor with p- and n-type conductivity and process for making the sameUS GOV SEC NAVY·Filed 2022·Granted Feb 25, 2025·0 cites·14 claims
- 2457US12376199B23D printed susceptor for rapid indirect RF heatingUS GOV SEC NAVY·Filed 2021·Granted Jul 29, 2025·0 cites·18 claims
- 2557US10351435B2Nanocrystalline alpha alumina and method for making the sameUS GOV SEC NAVY·Filed 2017·Granted Jul 16, 2019·0 cites·4 claims
- 2657US2024234139A9Diamond-Capped Gallium Oxide TransistorUS GOV SEC NAVY·Filed 2023·Application pending·0 cites
- 2757US2025191919A1High-Temperature Material Processing In The Absence Of HydrogenUS GOV SEC NAVY·Filed 2023·Application pending·0 cites
- 2857US2025191985A1High-Temperature Material Processing In The Absence Of HydrogenUS GOV SEC NAVY·Filed 2023·Application pending·0 cites
- 2950US2020240037A1Device for producing high pressures in solid mediaECODIAMOND GMBH·Filed 2018·Application pending·0 cites
- 3046US8449672B2Method of growing group III nitride crystalsFEIGELSON BORIS N·Filed 2008·Granted May 28, 2013·0 cites·8 claims
- 3143US2009223440A1Method of growing GaN crystals from solutionFEIGELSON BORIS·Filed 2008·Application pending·0 cites
- 3241US2006048701A1Method of growing group III nitride crystalsFEIGELSON BORIS N·Filed 2005·Application pending·0 cites
- 3327US10403509B2Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealingTADJER MARKO J·Filed 2015·Granted Sep 3, 2019·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →