Inventor · disambiguated record
Bo-Wen Hsieh
Also filed as: HSIEH BO-WEN
14 granted patents·2 pending applications·19 citations·filing 2015–2025
89Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD16
Top patents by PatentIndex Score
16 records- 0197US11296201B2Gate structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·5 cites·20 claims
- 0292US11996453B2Introducing fluorine to gate after work function metal depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·2 cites·20 claims
- 0389US11038035B2Semiconductor structure with enlarged gate electrode structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 15, 2021·4 cites·19 claims
- 0486US11018234B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 25, 2021·3 cites·20 claims
- 0583US9748350B2Semiconductor structure with enlarged gate electrode structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 29, 2017·3 cites·16 claims
- 0683US2024379790A1Semiconductor structure with enlarged gate electrode structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0782US12507461B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 0881US12426332B2Introducing fluorine to gate after work function metal depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 0979US12015068B2Gate structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 1079US10686049B2Gate structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 16, 2020·1 cites·20 claims
- 1179US2025311348A1Introducing fluorine to gate after work function metal depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1274US10008574B2Gate structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 26, 2018·1 cites·20 claims
- 1372US12191366B2Semiconductor structure with enlarged gate electrode structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·19 claims
- 1471US11848367B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·0 cites·20 claims
- 1562US10312338B2Gate structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 4, 2019·0 cites·20 claims
- 1658US10141416B2Semiconductor structure with enlarged gate electrode structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Bo-Wen Hsieh files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →